APT8030LVFR

APT8030LVFR 800V 27A 0.300Ω POWER MOS V ® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested FREDFET D G S • Popular TO-264 Package All Ratings: TC = 25°C unless otherwise specified. APT8030LVFR UNIT Volts Amps 800 27 108 ±30 ±40 520 4.16 -55 to 150 300 27 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 27 0.300 250 1000 2 4 ±100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpower.com 050-5592 Rev B CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-2005 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8030LVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6Ω MIN TYP MAX UNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns 27 108 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) 300 600 2.0 6.7 13 22 µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.24 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 6.86mH, R = 25Ω, Peak I = 27A j G L 5 I - -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% VR = 200V. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.005 0.01 SINGLE PULSE PDM 0.01 Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-5592 Rev B 1-2005 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT8030LVFR 50 VGS=5.5V, 6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 50 VGS=15V 40 VGS=10V VGS=5.5V, 6V & 7V 5V 40 5V 30 30 20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 20 4.5V 10 4V 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 100 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C TJ = +125°C 1.4 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 80 1.3 60 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @