APTGF300U120D

APTGF300U120D Single Switch with Series diodes NPT IGBT Power Module EK E C VCES = 1200V IC = 300A @ Tc = 80°C Applicatio n • Zero Current Switching resonant mode Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile G CK E CK C EK G Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 400 300 800 ±20 2080 600A @ 1200V Unit V A V W APTGF300U120D – Rev 0 July, 2004 Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–5 APTGF300U120D All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V, IC = 4 mA Tj = 25°C VGE = 0 V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE, IC = 12mA VGE = ±20V, VCE = 0 V Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 2Ω Min 1200 Typ 0.4 25 3.2 4 Max 6 3.9 6.5 ±1 Unit V mA V V µA Unit nF 4.5 Dynamic Characteristics Min Typ 21 2.9 1.52 70 50 500 30 17 18 Max ns mJ Series diode ratings and characteristics Symbol Characteristic IF(A V) VF Qrr Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Charge Test Conditions 50% duty cycle Min Tc = 85°C Typ 250 2.2 2.4 2.2 13 40 Max 2.5 Unit A V µC IF = 300A IF = 400A IF = 400A IF = 300A Tj = 150°C Tj = 25°C Tj = 125°C Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.06 0.13 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol