APTGF660U60D4

APTGF660U60D4 Single switch NPT IGBT Power Module 1 VCES = 600V IC = 660A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 3 5 2 2 4 5 1 3 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF660U60D4 – Rev 0 Reverse Bias Safe Operation Area 1100A@520V January, 2005 Max ratings 600 825 660 1100 ±20 2770 Unit V A APTGF660U60D4 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 660A Tj = 125°C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 800A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 800A R G = 4.7Ω Min Typ 1 1 1.95 2.2 5.5 Max 500 2.45 6.5 400 Unit µA mA V V nA 4.5 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Min Typ 36 3.2 210 86 420 83 250 93 450 95 18 25 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Qrr Diode Forward Voltage Reverse Recovery Charge Test Conditions IF = 800A VGE = 0 V IF = 800A VR = 300V di/dt =4000A/µs Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.25 1.2 52 87 Max 1.6 Unit V µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode Min Typ Max 0.045 0.085 150 125 125 5 2 420 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol