APTGT150H170

APTGT150H170 Full - Bridge Trench + Field Stop IGBT® Power Module VBUS Q1 G1 Q3 G3 VCES = 1700V IC = 150A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT150H170 – Rev 0 May, 2005 Max ratings 1700 250 150 300 ±20 890 Unit V A V W APTGT150H170 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1700V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0 V Min Typ 2.0 2.4 5.8 Max 350 2.4 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 150A R G = 4.7Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 150A R G = 4.7Ω Min Typ 13.5 0.55 0.44 370 40 650 180 400 50 800 300 48 47 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 350 600 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1700V 50% duty cycle IF = 150A IF = 150A VR = 900V di/dt =1600A/µs 150 1.8 1.9 385 490 40 64 2.2 V ns µC May, 2005 APT website – http://www.advancedpower.com 2-5 APTGT150H170 – Rev 0 APTGT150H170 Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.14 0.26 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol