APTGT25DA120D1

APTGT25DA120D1 Trench IGBT Power Module 3 Boost chopper ® VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Q2 6 7 1 2 3 4 5 7 6 2 1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W 50A@1200V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT25DA120D1 – Rev 0 January, 2004 TC = 25°C TC = 80°C TC = 25°C Max ratings 1200 40 25 65 ±20 140 Unit V A APTGT25DA120D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 4mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 36Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 36Ω Min 1200 Typ Max 5 2.1 6.5 400 Unit V mA V V nA 5.0 1.7 2.0 5.8 Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min Typ 1.8 0.1 0.08 150 90 550 130 180 100 650 180 Max Unit nF ns ns Reverse diode ratings and characteristics Symbol Characteristic VF Erec Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 25A VGE = 0V IF = 25A VR = 600V di/dt =990A/µs IF = 25A VR = 600V di/dt =990A/µs Min Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.6 1.6 2 2.7 5 Max 2.1 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol