APTGT30SK170D1
Trench IGBT Power Module
Buck chopper
®
VCES = 1700V IC = 30A @ Tc = 80°C
Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat
Q1 4 5
3
1
2
3 4 5 7 6
2
1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area
TC = 25°C Tj = 125°C
V W
70A@1700V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT30SK170D1 – Rev 0
January, 2004
TC = 25°C TC = 80°C TC = 25°C
Max ratings 1700 45 30 70 ±20 210
Unit V A
APTGT30SK170D1
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 1.5mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 30A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 30A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 30A RG = 18Ω Min
1700
Typ
Max 3 2.4 6.4 600
Unit V mA V V nA
5.2
2.0 2.4 5.8
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy
Min
Typ 2500 90 200 100 750 90 230 100 850 115 22
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/µs IF = 50A VR = 900V di/dt =990A/µs
Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Typ 1.8 1.9 8 15 18 29
Max 2.2
Unit V mJ µC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
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