APTM50SKM19
Buck chopper MOSFET Power Module
VDSS = 500V RDSon = 19mW max @ Tj = 25°C ID = 163A @ Tc = 25°C
Application · · AC and DC motor control Switched Mode Power Supplies
Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
· · ·
G1 S1 VBUS 0/VBUS OUT
Benefits · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 163 122 652 ±30 19 1136 46 50 2500 Unit V A V mW W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM50SKM19 – Rev 2
April, 2004
APTM50SKM19
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25°C
Tj = 125°C
Typ
Max 200 1000 19 5 ±200
Unit V µA mW V nA
VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 163A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A RG = 1W Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω Min Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384 µJ µJ ns Max Unit nF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt = 400A/µs IF = 120A VR = 400V di/dt = 400A/µs Min Tc = 70°C Typ 120 1.6 1.9 1.4 130 170 440 1840 Max 1.8 V Unit A
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APT website – http://www.advancedpower.com
2–6
APTM50SKM19 – Rev 2
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
April, 2004
APTM50SKM19
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.46 150 125 100 5 3.5 280 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle
8V 7.5V 7V 6.5V 6V 5.5V
400 300 200 100
TJ=25°C TJ=125°C TJ=-55°C
0 25
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
VGS=10V
VGS=20V
100
200
300
400
25
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (°C)
150
April, 2004
APT website – http://www.advancedpower.com
4–6
APTM50SKM19 – Rev 2
APTM50SKM19
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS, Gate to Source Voltage (V) 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=81.5A
-50 -25
0
25
50
75 100 125 150
TJ, Junction Temperature (°C) Maximum Safe Operating Area
100
limited by RDSon
100µs
10 Single pulse TJ=150°C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=163A 12 T =25°C J V =250V
CE
10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC)
April, 2004
VCE=400V
1000
Crss
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website – http://www.advancedpower.com
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APTM50SKM19 – Rev 2
APTM50SKM19
Delay Times vs Current 100 80 60 40 20 0 20 60 100 140 180 220 260 ID, Drain Current (A) Switching Energy vs Current 10 Switching Energy (mJ) 8 6 4 2 0 20 60 100 140 180 220 260 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 ID, Drain Current (A)
VDS=333V D=50% RG=1Ω TJ=125°C VDS=333V RG=1Ω TJ=125°C L=100µH
Rise and Fall times vs Current
td(off)
120 100
tr and tf (ns)
VDS=333V RG=1Ω TJ=125°C L=100µH
td(on) and td(off) (ns)
tf
80 60 40 20 0 20
td(on)
tr
60
100
140
180
220
260
ID, Drain Current (A) Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 14 12 10 8 6 4 2 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon
VDS=333V ID=163A TJ=125°C L=100µH
VDS=333V RG=1Ω TJ=125°C L=100µH
Eon
Eoff
Eoff
IDR, Reverse Drain Current (A)
400
1000
TJ=150°C 100
10
TJ=25°C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
April, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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APTM50SKM19 – Rev 2