PDI-E838

GaAlAs High power IR LED Emitters (660nm/880nm) PDI-E838 .063 [1.60] .167 [4.24] C L .104 [2.64] C L PACKAGE DIMENSIONS INCH [mm] .055 [1.40] RED L.E.D. CHIP I.R. L.E.D. CHIP .025 [0.64] .060 [1.52] C L WIRE BONDS METALIZED CERAMIC .250 [6.35] ENCAPSOLATE CONTACT B CONTACT A Metalized Ceramic Package FEATURES • Low Cost • 660 nm +/- 3nm • 2 drive line DESCRIPTION The PDI-E838 is a two drive line dual emitter oximeter component. The 660 and 880 nm GaAlAs infrared emitters are mounted in a glob toped low cost ceramic SMT package. The LEDs are bias separately by alternating polarity on the bias pins. APPLICATIONS • Oximeter Probes • Finger Clamps • Reusable probes ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER Pd If Ip Vr TSTG TO TS Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -40 MIN MAX 250 30 200 4 +80 +80 +240 UNITS mW mA mA V °C °C °C SCHEMATIC A 660 nm LED 880 nm LED B * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL Po Iv Vf Vr lp CHARACTERISTIC Radiant Flux Luminous Intensity Forward Voltage Reverse Breakdown Voltage Peak Wavelength Spectral Halfwidth Rise Time Fall Time TEST CONDITIONS If = 20 mA If= 20 mA If = 20 mA If = 10 μA If = 20 mA If = 20 mA If = 20 mA If = 20 mA MIN 1.8 20 5 658 660 nm TYP MAX 2.4 30 1.8 2.4 661 21 0.1 0.04 664 MIN 1.2 880 nm TYP MAX 1.8 1.2 5 870 880 50 0.8 0.8 1.7 890 UNITS mW mcd V V nm nm uS uS Δl tr tf Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com