NPT1004D

GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 Features Functional Schematic • Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz • 2.5 GHz Performance • 45 W P3dB CW Power • 13.5 dB Small Signal Gain • 55% Efficiency @ P3dB • 100% RF Tested • Thermally-Enhanced Surface Mount SOIC Package • High Reliability Gold Metallization Process • Subject to EAR99 Export Control • RoHS* Compliant Pin Configuration Applications • • • • • • Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM VHF/UHF/L/S-Band Radar 1-4 Gate 5-8 Drain 9 Paddle1 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Description The NPT1004 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W. This transistor is assembled in an industry standard surface mount plastic package. Ordering Information 1 Part Number Package NPT1004DT Tube (97 pieces) NPT1004DR 1500 piece reel * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008218 GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 Typical 2-Tone RF Performance: (measured in test fixture) Freq. = 2.5 GHz, VDS = 28 V, IDQ = 400 mA, Tone Spacing = 1 MHz, TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Peak Envelope Power 3 dB Compression 1 dB Compression P3dB, PEP P1dB, PEP 35 — 45 28 — W Small Signal Gain — GSS 12.5 13.5 — dB Drain Efficiency 3 dB Compression ƞ 50 55 — % Typical OFDM Performance: (measured in load pull system (refer to Table 2 and Fig. 1)) VDS = 28 V, IDQ = 350 mA, Single Carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth, Peak/Avg = 10.3 dB @ 0.01% probability on CCDF, POUT = 1.5 W avg., TC = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Power Gain 2.5 - 2.7 GHz 3.3 - 3.5 GHz GP — 13.0 10.5 — dB Drain Efficiency 2.5 - 2.7 GHz 3.3 - 3.5 GHz ƞ — 27 25 — % Error Vector Magnitude 2.5 - 2.7 GHz 3.3 - 3.5 GHz EVM — 2 2 — % Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008218 GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 DC Electrical Characteristics: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Breakdown Voltage VGS = -8 V, ID = 16 mA VBDS 100 — — V Drain-Source Leakage Current VGS = -8 V, VDS = 60 V IDLK — 2 10 mA Gate Threshold Voltage VDS = 28 V, ID = 16 mA VT -2.3 -1.8 -1.3 V Gate Quiescent Voltage VDS = 28 V, ID = 350 mA VGSQ -2.0 -1.5 -1.0 V On Resistance VGS = 2 V, ID = 120 mA RON — 0.25 0.30 Ω Drain Current VDS = 7 V pulsed, pulse width 300 ms 0.2% Duty Cycle, VGS = 2 V ID 7.5 9.5 — A Off Characteristics On Characteristics Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Total Device Power Dissipation (derated above 25°C) 40 W Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics5 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 200°C RJC 4.3 °C/W 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008218 GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 Table 1: Optimum Impedance Characteristics for CW Gain, Drain Efficiency, and Output Power Performance Frequency (MHz) 900 ZS (Ω) 2.0 + j2.7 ZL (Ω) 6.0 + j3.3 PSAT (W) 45 GSS (dB) 22.5 Drain Efficiency (%) 72 1500 1.6 - j0.8 4.5 + j0.5 45 18.5 70 2500 2.0 - j3.2 3.5 - j5.0 45 14.0 65 3500 3.2 - j6.5 2.9 - j8.0 35 12.0 60 Table 2: Optimum Impedance Characteristics for WiMAX Gain, Drain Efficiency, Output Power, and Linearity Performance. Single Carrier OFDM waveform 64-QAM 3/4, 8 burst, Peak/Avg = 10.3 dB @ 0.01% probability on CCDF, 2% EVM. Frequency (MHz) ZS (Ω) ZL (Ω) PSAT (W) GSS (dB) Drain Efficiency (%) 25006 2.1 - j7.6 3.1 - j3.9 5.0 14.0 27 26006 2.3 - j7.7 3.3 - j4.4 5.0 13.0 27 27006 2.3 - j9.0 3.4 - j4.7 5.0 13.0 27 3300 7 3.3 - j11.8 3.7 - j7.2 6.3 11.5 30 3500 7 3.5 - j13.5 3.5 - j10.0 4.5 10.5 25 38007 4.5 - j16.2 3.7 - j11.2 3.2 8.0 17 6. Continuous frame data, 10 MHz channel bandwidth. 7. 20 ms frame, 15 ms frame data, 3.5 MHz channel bandwidth. Impedance Reference ZS and ZL vs. Frequency Figure 1 - Optimum Impedance Characteristics for CW and OFDM Performance 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008218 GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 Load-Pull Data, Reference Plane at Device Leads: VDS = 28 V, IDQ = 350 mA (unless noted) 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008218 GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 Mounting Footprint Package Dimensions & Pin Out† Dim. Millimeters Min. Max. Min. Max. A 0.189 0.196 4.80 4.98 B 0.150 0.157 3.81 3.99 C 0.107 0.123 2.72 3.12 D 0.071 0.870 1.870 2.21 E 0.230 0.244 5.85 6.19 f † Inches 0.050 BSC 1.270 BSC F 0.0138 0.0192 0.35 0.49 G 0.055 0.061 1.40 1.55 G1 0.000 0.004 0.00 0.10 H 0.075 0.098 1.91 2.50 L 0.016 0.035 0.41 0.89 m 0° 8° 0° 8° Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Sn. 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008218 GaN Power Transistor, 28 V, 45 W DC - 4 GHz NPT1004D Rev. V1 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. 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