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W3013

W3013

  • 厂商:

    AGERE

  • 封装:

  • 描述:

    W3013 - W3013 Indirect Quadrature Modulator with Gain Control - Agere Systems

  • 数据手册
  • 价格&库存
W3013 数据手册
Preliminary Data Sheet November 1998 W3013 Indirect Quadrature Modulator with Gain Control Features n n n n n n n n Description The W3013 is a monolithic integrated circuit that provides indirect, quadrature modulation of an RF carrier by I & Q baseband inputs. The function performed by the W3013 is particularly suited for handheld digital cellular and digital cordless telephones that operate between 800 MHz and 2.2 GHz. The circuit block diagram is shown below. From a single local-oscillator input (LO1), the phase shifter produces two LO signals with 90° phase separation and equal amplitude. The LO signals are fed to the in-phase (I) and quadrature (Q) double-balanced mixers. The resulting signals are summed and fed into an RF mixer where the frequency can be translated to over 2 GHz. Outputs between the summer and RF mixer are available for external filtering. Finally, the signal is amplified to provide a single-ended output. The ENB/APC input with a logic low allows the device to be put into a powerdown mode. Above the logic low threshold, the device enters a power control mode that provides a range of desired output power levels. Low-voltage operation: 2.7 V High-frequency operation: 2.2 GHz High RF output power: –10 dBm High-accuracy phase shifter, no trim required Low carrier feedthrough: –45 dBc Automatic power control (APC) capability Low-current sleep mode 20-pin TSSOP package Applications n n n n n n North American IS-136 Japan PDC (RCR STD 27) Japan PHS (RCR STD 28) GSM 900, 1800, and 1900 MHz Narrowband CDMA Digital satellite communications I I LO1 LO1REF +π/4 Q Q –π/4 EXTERNAL FILTER RFOUT Ø ∑ INTERNAL LOW-PASS FILTER RFOUT POWER CONTROL LO2 LO2REF ENAB/APC Figure 1. Circuit Block Diagram W3013 Indirect Quadrature Modulator with Gain Control Preliminary Data Sheet November 1998 Pin Information VCC FILTA FILTB I I Q Q LO1REF LO1 GND 1 2 3 4 5 6 7 8 9 10 TOP VIEW 20 19 18 17 16 15 14 13 12 11 VCC RFOUT GND GND ENB/APC GND GND LO2REF LO2 GND 12-2680 Figure 2. Pin Diagram Table 1. Pin Descriptions Pin 1 2, 3 4 5 6 7 8, 9 10, 11, 14, 15, 17, 18 12, 13 16 19 20 Symbol VCC FILTA, FILTB I I Name/Description Positive Supply Voltage. For low-power/small-signal subcircuits. Filter. Nodes A & B for parallel resonant LC. Differential Baseband Input. Differential Baseband Input (Inverting). Differential Baseband Input. Differential Baseband Input (Inverting). First Local Oscillator Input. Either pin may be directly grounded. Power Supply Ground. Second Local Oscillator Input. Either pin may be directly grounded. Enable/Automatic Power Control. RF Output. Positive Supply Voltage. For RF output stage. Q Q LO1REF, LO1 GND LO2, LO2REF ENB/APC RFOUT VCC 2 Lucent Technologies Inc. Preliminary Data Sheet November 1998 W3013 Indirect Quadrature Modulator with Gain Control Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Ambient Operating Temperature Storage Temperature Lead Temperature (soldering, 10 s) Positive Supply Voltage Power Dissipation Output Current (continuous) ac Input Voltage Enable Input Voltage Symbol TA Tstg TL VCC PD IOUT — VENB Min –40 –65 — — — — GND GND Max 100 150 300 5 750 160 VCC VCC Unit °C °C °C Vdc mW mA Vp-p Vdc Handling Precautions Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500 Ω, capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes. The HBM ESD threshold presented here was obtained by using these circuit parameters: ESD Threshold Voltage Device W3013 W3013 Rating ≥1000 V ≥1000 V Model HBM CDM Lucent Technologies Inc. 3 W3013 Indirect Quadrature Modulator with Gain Control Preliminary Data Sheet November 1998 Operating Ranges This table lists the ranges of external conditions in which the W3013 provides general functionality that may be useful in specific applications without risk of permanent damage. However, performance is not guaranteed over the full range of all possible conditions. The conditions for guaranteed performance are described in the Electrical Characteristics table. Parameter VCC f LO1 VLO1 f LO2 VLO2 f RF I & Q Input Range of dc Bias for 1 Vp-p Differential Input I & Q Input Range of dc Bias for 1 Vp-p Single-ended Input I (Q) to I ( Q ) Differential Input Swing* Ambient Operating Temperature Min 2.7 100 100 100 100 2200 VCC/2 + 0.1 VCC/2 + 0.1 1.1 85 Unit V MHz mVp-p MHz mVp-p MHz Vdc Vdc Vp-p °C * Distortion-dependent, e.g., 1.3 Vp-p π/4 DQPSK peak voltage meets PDC or IS-136 distortion specification under random data modulation. Electrical Characteristics Table 2. Electrical Characteristics Conditions (unless otherwise specified): TA = 25 °C ± 3 °C, VCC = 2.7 Vdc, RL = 50 Ω, fLO1 = 178 MHz, f LO2 = 1620 MHz, PLO1 = PLO2 = –10 dBm, VBIAS(I) = VBIAS( I ) = VBIAS(Q) = VBIAS( Q ) = VCC/2; I – I = 0.5 Ÿ cos(2πt Ÿ 80 kHz – π/2) V, Q – Q = 0.5 Ÿ cos(2πt Ÿ 80 kHz) V, fRFOUT = 1442.08 MHz, VAPC = 2.7 Vdc. Parameter VCC Supply Current: Active Mode Sleep Mode @ VCC = 3.3 V, ENB/APC ≤ 0.1 Vdc I & Q: I & Q Signal Path: 3 dB Bandwidth (differential input) I & Q Input Bias Current I & Q Input Impedance LO1: LO1 Suppression (relative to output power) LC Filter Pins: Differential Impedance LO2: LO2 Suppression (relative to output power) Modulation Accuracy: Carrier Suppression (relative to wanted sideband) Lower Sideband Suppression Transmitted I and Q Amplitude Error Transmitted I and Q Phase Error Error Vector Magnitude (See page 6.) Min — — — — — — — — 35 35 — — — Typ 37
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