AS1C8M16PL-70BIN

AS1C8M16PL-70BIN Revision History 128M (4Mx16 bit CellularRAM AD-MUX *2 stack) Low Power PSEUDO SRAM 49ball FBGA Package Revision Rev 1.0 Details Preliminary datasheet Date Aug 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 53 - Rev.1.0 Aug. 2018 AS1C8M16PL-70BIN 4Mx16 bit CellularRAM AD-MUX *2 stack x16 Burst, Multiplexed Address/Data RAM Specification FEATURES - 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108 MHz (tCLK = 9.26ns) , 133MHz(tCLK = 7.5ns) Burst initial latency: 37.0ns (4 clocks) @ 108 MHz , 37.5ns (5 clocks) @ 133 MHz tACLK: 7ns @ 108 MHz , 5.5ns @ 133 MHz - Low power consumption: Asynchronous READ: