AS4C64M8D3-12BINTR

AS4C64M8D3-12BIN AS4C64M8D3-12BCN Revision History 512M DDR3 AS4C64M8D3 78ball FBGA PACKAGE Revision Rev 1.0 Details Preliminary datasheet Date Aug. 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN 64M x 8 bit DDR3 Synchronous DRAM (SDRAM) Advance (Rev. 1.0,Aug. /2017) Features Overview  JEDEC Standard Compliant  Power supplies: VDD & VDDQ = +1.5V 0.075V  Operating temperature range: - Commercial : TC = 0~95°C - Industrial : TC = -40~95°C The 512Mb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 512Mb chip is organized as 8Mbit x 8 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ±0.075V power supply and are available in BGA packages. Supports JEDEC clock jitter specification Fully synchronous operation Fast clock rate: 800MHz Differential Clock, CK & CK# Bidirectional differential data strobe - DQS & DQS#  8 internal banks for concurrent operation  8n-bit prefetch architecture  Pipelined internal architecture  Precharge & active power down  Programmable Mode & Extended Mode registers  Additive Latency (AL): 0, CL-1, CL-2  Programmable Burst lengths: 4, 8  Burst type: Sequential / Interleave  Output Driver Impedance Control  8192 refresh cycles / 64ms - Average refresh period 7.8μs @ -40°C ≦TC≦ +85°C 3.9μs @ +85°C ＜TC≦ +95°C  Write Leveling  ZQ Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)  RoHS compliant  Auto Refresh and Self Refresh  78-ball 8 x 10.5 x 1.0mm FBGA package - Pb and Halogen Free      Table 1. Ordering Information Max Clock (MHz) Temperature Org Product part No Package AS4C64M8D3-12BCN 64M x 8 Commercial 0°C to 95°C 800 78-ball FBGA AS4C64M8D3-12BIN 64M x 8 Industrial -40°C to 95°C 800 78-ball FBGA Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency tRCD (ns) tRP (ns) DDR3-1600 800 MHz 11 13.75 13.75 Confidential - 2 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 1. Ball Assignment (FBGA Top View) … 1 2 3 7 8 9 A VSS VDD NC TDQS# VSS VDD B VSS VSSQ DQ0 DM/ TDQS . VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS# VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ F NC VSS RAS# CK VSS NC G ODT VDD CAS# CK# VDD CKE H NC CS# WE# A10/AP ZQ NC J VSS BA0 BA2 NC VREFCA VSS K VDD A3 A0 A12/BC# BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET# NC NC A8 VSS Confidential - 3 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 2. Block Diagram CK CK# CKE Row Decoder DLL CLOCK BUFFER 8M x 8 CELL ARRAY (BANK #0) Column Decoder CS# RAS# CAS# WE# 8M x 8 CELL ARRAY (BANK #1) Column Decoder Row Decoder COMMAND DECODER CONTROL SIGNAL GENERATOR Row Decoder RESET# 8M x 8 CELL ARRAY (BANK #2) Column Decoder COLUMN COUNTER MODE REGISTER Row Decoder A10/AP A12/BC# 8M x 8 CELL ARRAY (BANK #3) Column Decoder A0-A9 A11 BA0-BA2 Row Decoder ADDRESS BUFFER 8M x 8 CELL ARRAY (BANK #4) REFRESH COUNTER DQS DQS# TDQS TDQS# ZQ CAL 8M x 8 CELL ARRAY (BANK #5) Column Decoder RZQ DATA STROBE BUFFER DQ Buffer Row Decoder VSSQ ZQCL ZQCS Row Decoder Column Decoder 8M x 8 CELL ARRAY (BANK #6) Column Decoder Row Decoder ~ DQ0 DQ7 ODT Confidential DM - 4 of 84 - 8M x 8 CELL ARRAY (BANK #7) Column Decoder Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 3. State Diagram This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands to control them. In particular, situations involving more than one bank, the enabling or disabling of on-die termination, and some other events are not captured in full detail. Power On Reset Procedure MRS,MPR, Write Leveling Initialization from any RESET state ZQCL MRS ZQCL,ZQCS ZQ Calibration Self Refresh SR SR E X Power applied Idle Refreshing REF X PD E PD ACT ACT = Active PRE = Precharge PREA = Precharge All Active Power Down Precharge Power Down Activating PD X MRS = Mode Register Set PD E REF = Refresh RESET = Start RESET Procedure Bank Activating Read = RD, RDS4, RDS8 Read A = RDA, RDAS4, RDAS8 ZQCL = ZQ Calibration Long ZQCS = ZQ Calibration Short A AD Writing READ WRITE AD PDE = Enter Power-down PDX = Exit Power-down SRE = Self-Refresh entry SRX = Self-Refresh exit RE Reading A WRITE A MPR = Multi-Purpose Register READ A WR A ITE RE AD A P RE , Reading PR EA EA PR Automatic Sequence Command Sequence PRE, PREA E, PR Writing Confidential READ WR WRITE RE ITE TE Write A = WRA, WRAS4, WRAS8 RI W Write = WR, WRS4, WRS8 Precharging - 5 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Ball Descriptions Table 3. Ball Details Symbol Type Description CK, CK# Input Differential Clock: CK and CK# are driven by the system clock. All SDRAM input signals are sampled on the crossing of positive edge of CK and negative edge of CK#. Output (Read) data is referenced to the crossings of CK and CK# (both directions of crossing). CKE Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes LOW synchronously with clock, the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains LOW. When all banks are in the idle state, deactivating the clock controls the entry to the Power Down and Self Refresh modes. BA0-BA2 Input Bank Address: BA0-BA2 define to which bank the BankActivate, Read, Write, or Bank Precharge command is being applied. A0-A12 Input Address Inputs: A0-A12 are sampled during the BankActivate command (row address A0-A12) and Read/Write command (column address A0-A9 with A10 defining Auto Precharge). A10/AP Input Auto-Precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). A12/BC# Input Burst Chop: A12/BC# is sampled during Read and Write commands to determine if burst chop (on the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped). CS# Input Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when CS# is sampled HIGH. It is considered part of the command code. RAS# Input Row Address Strobe: The RAS# signal defines the operation commands in conjunction with the CAS# and WE# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH" either the BankActivate command or the Precharge command is selected by the WE# signal. When the WE# is asserted "HIGH" the BankActivate command is selected and the bank designated by BA is turned on to the active state. When the WE# is asserted "LOW" the Precharge command is selected and the bank designated by BA is switched to the idle state after the precharge operation. CAS# Input Column Address Strobe: The CAS# signal defines the operation commands in conjunction with the RAS# and WE# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. When RAS# is held "HIGH" and CS# is asserted "LOW" the column access is started by asserting CAS# "LOW". Then, the Read or Write command is selected by asserting WE# “HIGH" or “LOW". WE# Input Write Enable: The WE# signal defines the operation commands in conjunction with the RAS# and CAS# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. The WE# input is used to select the BankActivate or Precharge command and Read or Write command. DQS, DQS# TDQS, TDQS# DM Confidential Input / Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe is edge triggered. Write Data Strobe provides a setup and hold time for data and DM. The Output data strobes DOS is paired with DQS# to provide differential pair signaling to the system during both reads and writes. Output Termination Data Strobe: When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. Input Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle. DM has an optional use as TDQS on the x8. - 6 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN DQ0-DQ7 Input / Data I/O: The data bus input and output data are synchronized with positive and negative Output edges of DQS/DQS#. The I/Os are byte-maskable during Writes. ODT Input On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#, DM/TDQS and TDQS# signal. (When TDQS is enabled via Mode Register A11=1 in MR1) The ODT pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT. RESET# Input Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD VDD Supply Power Supply: +1.5V 0.075V VSS Supply Ground VDDQ Supply DQ Power: +1.5V 0.075V. VSSQ Supply DQ Ground VREFCA Supply Reference voltage for CA VREFDQ Supply Reference voltage for DQ ZQ NC Confidential Supply Reference pin for ZQ calibration. - No Connect: These pins should be left unconnected. - 7 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Operation Mode Truth Table The following tables provide a quick reference of available DDR3 SDRAM commands, including CKE powerdown modes and bank-to-bank commands. Table 4. Truth Table (Note (1), (2)) Command State CKEn-1(3) CKEn DM BA0-2 A10/AP A0-9, 11 A12/BC# CS# RAS# CAS# WE# Idle(4) H H X V L L H H Single Bank Precharge Any H H X V L V V L L H L All Banks Precharge Any H H X V H V V L L H L Write (Fixed BL8 or BC4) Active(4) H H X V L V V L H L L Write (BC4, on the fly) Active(4) H H X V L V L L H L L Write (BL8, on the fly) Active(4) H H X V L V H L H L L Active(4) H H X V H V V L H L L Active(4) H H X V H V L L H L L Active(4) H H X V H V H L H L L Read (Fixed BL8 or BC4) Active(4) H H X V L V V L H L H Read (BC4, on the fly) Active(4) H H X V L V L L H L H Read (BL8, on the fly) Active(4) H H X V L V H L H L H Active(4) H H X V H V V L H L H Active(4) H H X V H V L L H L H Active(4) H H X V H V H L H L H (Extended) Mode Register Set Idle H H X V L L L L No-Operation Any H H X V V V L H H H Device Deselect Any H H X X X X X H X X X Refresh Idle H H X V V V V L L L H SelfRefresh Entry Idle H L X V V V V L L L H SelfRefresh Exit Idle L H X X X X X H X X X V V V V L H H H Power Down Mode Entry Idle H L X X X X X H X X X V V V V L H H H Power Down Mode Exit Any L H X X X X X H X X X V V V V L H H H Data Input Mask Disable Active H X L X X X X X X X X Data Input Mask Enable(5) Active H X H X X X X X X X X Idle H H X X H X X L H H L Idle H H X X L X X NOTE 1: V=Valid data, X=Don't Care, L=Low level, H=High level NOTE 2: CKEn signal is input level when commands are provided. NOTE 3: CKEn-1 signal is input level one clock cycle before the commands are provided. NOTE 4: These are states of bank designated by BA signal. NOTE 5: DM can be enabled respectively. L H H L BankActivate Write with Autoprecharge (Fixed BL8 or BC4) Write with Autoprecharge (BC4, on the fly) Write with Autoprecharge (BL8, on the fly) Read with Autoprecharge (Fixed BL8 or BC4) Read with Autoprecharge (BC4, on the fly) Read with Autoprecharge (BL8, on the fly) ZQ Calibration Long ZQ Calibration Short Confidential - 8 of 84 - Row address OP code V Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Functional Description The DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. The DDR3 SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n Prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a „chopped‟ burst of four in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A12 select the row). The address bit registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode „on the fly‟ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation. Figure 4. Reset and Initialization Sequence at Power-on Ramping Ta CK# Tb Tc CK Td Te Tf Tg Th Ti Tj Tk tCKSRX VDD VDDQ T=200μs T=500μs RESET# Tmin=10ns tIS CKE tDLLK tIS COMMAND Note 1 BA tXPR tMRD tMRD tMRD tMOD MRS MRS MRS MRS MR2 MR3 MR1 MR0 tZQinit ZQCL Note 1 VALID tIS ODT VALID tIS Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW VALID RTT NOTE 1. From time point “Td”until “Tk”NOP or DES commands must be applied between MRS and ZQCL commands. TIME BREAK Confidential - 9 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN  Power-up and Initialization The Following sequence is required for POWER UP and Initialization. 1. Apply power (RESET# is recommended to be maintained below 0.2xVDD, all other inputs may be undefined). RESET# needs to be maintained for minimum 200us with stable power. CKE is pulled “Low” anytime before RESET# being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDDmin must be no greater than 200ms; and during the ramp, VDD>VDDQ and (VDD-VDDQ) VDDQ and (VDD-VDDQ) VIH(ac)=VREF(dc)+175mV, VIL(ac)=VREF(dc)-175mV CK, CK# Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns CMD /ADD Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Confidential △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH 88 59 0 -2 -6 -11 -17 -35 -62 50 34 0 -4 -10 -16 -26 -40 -60 88 59 0 -2 -6 -11 -17 -35 -62 50 34 0 -4 -10 -16 -26 -40 -60 88 59 0 -2 -6 -11 -17 -35 -62 50 34 0 -4 -10 -16 -26 -40 -60 96 67 8 6 2 -3 -9 -27 -54 58 42 8 4 -2 -8 -18 -32 -52 104 75 16 14 10 5 -1 -19 -46 66 50 16 12 6 0 -10 -24 -44 112 83 24 22 18 13 7 -11 -38 74 58 24 20 14 8 -2 -16 -36 120 91 32 30 26 21 15 -2 -30 84 68 34 30 24 18 8 -6 -26 128 99 40 38 34 29 23 5 -22 100 84 50 46 40 34 24 10 -10 - 57 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Table 42. Derating values DDR31600 tIS/tIH – (AC150) △ tIS, △ tIH derating in [ps] AC/DC based Alternate AC150 Threshold -> VIH(ac)=VREF(dc)+150mV, VIL(ac)=VREF(dc)-150mV CK, CK# Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns CMD /ADD Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Confidential △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH △ tIS △ tIH 75 50 0 0 0 0 -1 -10 -25 50 34 0 -4 -10 -16 -26 -40 -60 75 50 0 0 0 0 -1 -10 -25 50 34 0 -4 -10 -16 -26 -40 -60 75 50 0 0 0 0 -1 -10 -25 50 34 0 -4 -10 -16 -26 -40 -60 83 58 8 8 8 8 7 -2 -17 58 42 8 4 -2 -8 -18 -32 -52 91 66 16 16 16 16 15 6 -9 66 50 16 12 6 0 -10 -24 -44 99 74 24 24 24 24 23 14 -1 74 58 24 20 14 8 -2 -16 -36 107 82 32 32 32 32 31 22 7 84 68 34 30 24 18 8 -6 -26 115 90 40 40 40 40 39 30 15 100 84 50 46 40 34 24 10 -10 - 58 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN - Data Setup, Hold, and Slew Rate De-rating For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the Δ tDS and Δ tDH derating value respectively. Example: tDS (total setup time) = tDS(base) + Δ tDS. Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of Vref(dc) and the first crossing of VIH(ac)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of Vref(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded ‘Vref(dc) to ac region’, use nominal slew rate for derating value. If the actual signal is later than the nominal slew rate line anywhere between shaded ‘Vref(dc) to ac region’, the slew rate of the tangent line to the actual signal from the ac level to dc level is used for derating value. Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first crossing of Vref(dc). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(dc)min and the first crossing of Vref(dc). If the actual signal is always later than the nominal slew rate line between shaded ‘dc level to Vref(dc) region’, use nominal slew rate for derating value. If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘dc to Vref(dc) region’, the slew rate of a tangent line to the actual signal from the dc level to Vref(dc) level is used for derating value. For a valid transition the input signal has to remain above/below VIH/IL(ac) for some time tVAC. Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). For slew rates in between the values listed in the following tables, the derating values may be obtained by linear interpolation. These values are typically not subject to production test. They are verified by design and characterization. Table 43. Data Setup and Hold Base Symbol tDS(base) AC150 tDS(base) AC135 tDH(base) DC100 tDH(base) DC100 Note Unit ps ps ps ps -12 Reference VIH/L(ac) VIH/L(ac) VIH/L(dc) VIH/L(dc) 10 45 2 1 1 2 NOTE 1: (ac/dc referenced for 2V/ns DQ- slew rate and 4 V/ns differential DQS slew rate) NOTE 2: (ac/dc referenced for 1V/ns DQ- slew rate and 2 V/ns differential DQS slew rate) Table 44. Derating values for DDR3-1600 tDS/tDH – (AC150) △tDS, △tDH derating in [ps] AC/DC based Alternate AC150 Threshold -> VIH(ac)=VREF(dc)+150mV, VIL(ac)=VREF(dc)-150mV DQS, DQS# Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns DQ Slew Rate V/ns 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Confidential △ tDS △ tDH △ tDS △ tDH △ tDS △ tDH △ tDS △ tDH △ tDS △ tDH △ tDS △ tDH △ tDS △ tDH △ tDS △ tDH 75 50 0 - 50 34 0 - 75 50 0 0 - 50 34 0 -4 - 75 50 0 0 0 - 50 34 0 -4 -10 - 58 8 8 8 8 - 42 8 4 -2 -8 - 16 16 16 16 15 - 16 12 6 0 -10 - 24 24 24 23 14 - 20 14 8 -2 -16 - 32 32 31 22 7 24 18 8 -6 -26 40 39 30 15 34 24 10 -10 - 59 of 84 - Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Timing Waveforms Figure 25. MPR Readout of predefined pattern,BL8 fixed burst order, single readout T0 Ta Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 PREA MRS READ NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Tc7 Tc8 tMPRR COMMAND tRP tMOD Tc9 Td tMOD MRS MRS MRS VALID Notes 1 BA 3 VALID 3 A[1:0] 0 0 VALID Notes 2 A[2] 1 0 0 Notes 2 A[9:3] 00 VALID 00 0 VALID 0 A[11] 0 VALID 0 A12, BC# 0 VALID 0 A[14:13] 0 VALID A10, AP 1 0 RL DQS, DQS# DQ NOTES: 1. RD with BL8 either by MRS or OTF. 2. Memory Controller must drive 0 on A[2:0]. TIME BREAK Don't Care Figure 26. MPR Readout of predefined pattern,BL8 fixed burst order, back to back readout CK# T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ READ NOP NOP NOP NOP NOP NOP NOP Tc8 Tc9 CK COMMAND Tc10 tMPRR tRP tMOD Notes 1 tCCD NOP NOP tMOD MRS 3 VALID VALID 3 A[1:0] 0 0 0 VALID A[2] 1 Notes 2 0 0 0 Notes 2 Notes 2 A[9:3] 00 VALID VALID 00 0 VALID VALID 0 A[11] 0 VALID VALID 0 A12, BC# 0 VALID VALID 0 A10, AP 1 Notes 1 Notes 1 A[14:13] 0 VALID Notes 1 BA Notes 2 Td VALID VALID 0 RL DQS, DQS# RL DQ NOTES: 1. RD with BL8 either by MRS or OTF. 2. Memory Controller must drive 0 on A[2:0]. Confidential TIME BREAK - 60 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 27. MPR Readout of predefined pattern,BC4 lower nibble then upper nibble CK# T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ READ NOP NOP NOP NOP NOP NOP NOP CK COMMAND Tc8 Tc9 tMPRR tRP tMOD tCCD VALID VALID 3 A[1:0] 0 0 0 VALID Notes 2 0 1 0 Notes 4 00 VALID VALID 00 0 VALID VALID 0 A[11] 0 VALID VALID 0 A12, BC# 0 VALID VALID 0 A10, AP 1 Notes 1 Notes 1 0 A[14:13] VALID VALID Notes 2 Notes 3 A[9:3] NOP NOP Notes 1 Notes 1 3 1 Td tMOD MRS BA A[2] Tc10 VALID 0 RL DQS, DQS# RL DQ NOTES: 1. RD with BC4 either by MRS or OTF. 2. Memory Controller must drive 0 on A[1:0]. 3. A[2]=0 selects lower 4 nibble bits 0....3. 4. A[2]=1 selects upper 4 nibble bits 4....7. TIME BREAK Don't Care Figure 28. MPR Readout of predefined pattern,BC4 upper nibble then lower nibble T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ READ NOP NOP NOP NOP NOP NOP NOP CK# CK COMMAND Tc8 Tc9 tMPRR tRP tMOD Notes 1 tCCD VALID VALID 3 A[1:0] 0 0 0 VALID 1 1 0 0 Notes 3 00 VALID VALID 00 0 VALID VALID 0 A[11] 0 VALID VALID 0 A12, BC# 0 VALID VALID 0 A10, AP 1 Notes 1 Notes 1 A[14:13] 0 VALID VALID Notes 2 Notes 4 A[9:3] NOP NOP Notes 1 3 A[2] Td tMOD MRS BA Notes 2 Tc10 VALID 0 RL DQS, DQS# RL DQ NOTES: 1. RD with BC4 either by MRS or OTF. 2. Memory Controller must drive 0 on A[1:0]. 3. A[2]=0 selects lower 4 nibble bits 0....3. 4. A[2]=1 selects upper 4 nibble bits 4....7. Confidential TIME BREAK - 61 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 29. READ (BL8) to READ (BL8) CK# CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 READ NOP NOP NOP READ NOP NOP NOP NOP NOP NOP T11 T12 T13 T14 NOP NOP NOP Notes 3 COMMAND ADDRESS NOP tCCD Notes 4 Bank, Col n Bank, Col b tRPRE tRPST DQS, DQS# Notes 2 DQ Dout n RL = 5 Dout n+1 Dout n+2 Dout n+3 Dout n+4 Dout n+5 Dout n+6 Dout n+7 Dout b Dout b+1 Dout b+2 Dout b+3 Dout b+4 Dout b+5 Dout b+6 Dout b+7 RL = 5 TRANSITIONING DATA NOTES: 1. BL8, RL = 5 (CL = 5, AL = 0) 2. DOUT n (or b) = data-out from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T4. Don't Care Figure 30. Nonconsecutive READ (BL8) to READ (BL8) CK# CK T0 T1 T2 READ NOP NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP T14 Notes 3 COMMAND ADDRESS NOP tCCD = 5 Notes 4 Bank, Col n Bank, Col b tRPRE Notes 5 tRPST DQS, DQS# Notes 2 DQ DO n RL = 5 DO b RL = 5 NOTES: 1. BL8, RL = 5 (CL = 5, AL = 0), tCCD=5 2. DOUT n (or b) = data-out from column n (or column b) 3. NOP commands are shown for ease of illustration; other commands may be valid at these times 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T4 5. DQS-DQS# is held logic low at T9 TRANSITIONING DATA Don't Care Figure 31. READ (BL4) to READ (BL4) CK# CK T0 T1 T2 READ NOP NOP T3 T4 NOP READ T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP NOP T14 Notes 3 COMMAND ADDRESS NOP NOP NOP NOP NOP NOP tCCD Notes 4 Bank, Col n Bank, Col b tRPST tRPRE tRPST tRPRE DQS, DQS# Notes 2 DQ RL = 5 Dout n Dout n+1 Dout n+2 Dout n+3 Dout b Dout b+1 NOTES: 1. BC4, RL = 5 (CL = 5, AL = 0) 2. DOUT n (or b) = data-out from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by either MR0[A1:0 = 10] or MR0[A1:0 = 01] and A12 = 0 during READ commands at T0 and T4. Confidential Dout b+2 Dout b+3 RL = 5 - 62 of 84 - TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 32. READ (BL8) to WRITE (BL8) T0 T1 T2 READ NOP NOP CK# CK T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP T14 Notes 3 COMMAND NOP tCCD = 5 Notes 4 Bank, Col n ADDRESS Bank, Col b tRPRE Notes 5 tRPST DQS, DQS# Notes 2 DQ DO n RL = 5 DO b RL = 5 NOTES: 1. BL8, RL = 5 (CL = 5, AL = 0), tCCD=5 2. DOUT n (or b) = data-out from column n (or column b) 3. NOP commands are shown for ease of illustration; other commands may be valid at these times 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T4 5. DQS-DQS# is held logic low at T9 TRANSITIONING DATA Don't Care Figure 33. READ (BL4) to WRITE (BL4) OTF CK# T0 T1 T2 T3 T4 T5 READ NOP NOP NOP WRITE T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP NOP T14 T15 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP NOP tWR 4 clocks READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL Notes 4 ADDRESS Bank, Col n Bank, Col b tWPST tWPRE tRPST tRPRE tWTR DQS, DQS# DQ Notes 2 Dout n RL = 5 Dout n+1 Dout n+2 Dout n+3 Din b Din b+1 Din b+2 Din b+3 WL = 5 NOTES: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0) 2. DOUT n = data-out from column, DIN b = data-in from column b. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T0 and WRITE command at T4. TRANSITIONING DATA Don't Care Figure 34. READ (BL8) to READ (BL4) OTF CK# T0 T1 READ NOP T2 T3 T4 NOP NOP READ T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP NOP T14 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP tCCD Notes 4 ADDRESS Bank, Col n Bank, Col b tRPST tRPRE DQS, DQS# DQ Notes 2 RL = 5 Dout n Dout n+1 Dout n+2 Dout n+3 Dout n+4 Dout n+6 Dout n+7 Dout b Dout b+1 Dout b+2 Dout b+3 RL = 5 NOTES: 1. RL = 5 (CL = 5, AL = 0) 2. DOUT n (or b) = data-out from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during READ command at T0. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T4. Confidential Dout n+5 - 63 of 84 - TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 35. READ (BL4) to READ (BL8) OTF CK# T0 T1 READ NOP T2 T3 T4 NOP NOP READ T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP NOP T14 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP tCCD Notes 4 ADDRESS Bank, Col n Bank, Col b tRPST tRPRE tRPST tRPRE DQS, DQS# Notes 2 DQ Dout n RL = 5 Dout n+1 Dout n+2 Dout n+3 Dout b Dout b+1 Dout b+2 Dout b+3 Dout b+4 Dout b+5 Dout b+6 Dout b+7 RL = 5 NOTES: 1. RL = 5 (CL = 5, AL = 0) 2. DOUT n (or b) = data-out from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T0. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during READ command at T4. TRANSITIONING DATA Don't Care Figure 36. READ (BC4) to WRITE (BL8) OTF CK# T0 T1 T2 T3 T4 READ NOP NOP NOP WRITE T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP NOP T14 T15 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP NOP tWR 4 clocks READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL Notes 4 ADDRESS Bank, Col n tWTR Bank, Col b tWPST tWPRE tRPST tRPRE DQS, DQS# DQ Notes 2 Dout n RL = 5 Dout n+1 Dout n+2 Dout n+3 Din b Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 WL = 5 NOTES: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0) 2. DOUT n = data-out from column, DIN b = data-in from column b. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T0 and WRITE command at T4. TRANSITIONING DATA Don't Care Figure 37. READ (BL8) to WRITE (BL4) OTF CK# T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP NOP T14 T15 NOP NOP CK Notes 3 COMMAND NOP WRITE NOP NOP NOP tWR READ to WRITE Command Delay = RL + tCCD + 2tCK - WL Notes 4 ADDRESS 4 clocks Bank, Col n tWTR Bank, Col b tRPST tRPRE tWPST tWPRE DQS, DQS# DQ Notes 2 RL = 5 Dout n Dout n+1 Dout n+2 Dout n+3 Dout n+4 Dout n+5 Dout n+7 Din b Din b+1 Din b+2 Din b+3 WL = 5 NOTES: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL= 5, AL = 0) 2. DOUT n = data-out from column, DIN b = data-in from column b. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during READ command at T0. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T6. Confidential Dout n+6 - 64 of 84 - TRANSITIONING DATA Don't Care Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 38. READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5 CK# T0 T1 T2 NOP READ NOP T3 T4 NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 T13 ACT NOP NOP NOP T14 T15 NOP NOP CK COMMAND PRE NOP NOP NOP NOP tRP tRTP RL = AL + CL Bank a, Col n ADDRESS DQS, DQS# Bank a, (or all) Bank a, Row b BL4 Operation: DQ DQS, DQS# DO n DO n+1 DO n+2 DO n+3 DO n DO n+1 DO n+2 DO n+3 BL8 Operation: DQ DO n+4 DO n+5 DO n+6 DO n+7 NOTES: 1. RL = 5 (CL = 5, AL = 0) 2. DOUT n = data-out from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. The example assumes tRAS.MIN is satisfied at Precharge command time (T5) and that tRC.MIN is satisfied at the next Active command time (T10). TRANSITIONING DATA Don't Care Figure 39. READ to PRECHARGE, RL = 8, AL = CL-2, CL = 5, tRTP = 6, tRP = 5 CK# T0 T1 T2 T3 T4 NOP READ NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 PRE NOP NOP T13 T14 T15 NOP ACT CK COMMAND AL = CL - 2 = 3 NOP NOP NOP NOP NOP tRTP NOP tRP CL = 5 Bank a, Col n ADDRESS DQS, DQS# Bank a, (or all) BL4 Operation: DQ DQS, DQS# Bank a, Row b DO n DO n+1 DO n+2 DO n+3 DO n DO n+1 DO n+2 DO n+3 BL8 Operation: DQ NOTES: 1. RL = 8 (CL = 5, AL = CL - 2) 2. DOUT n = data-out from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. The example assumes tRAS.MIN is satisfied at Precharge command time (T10) and that tRC.MIN is satisfied at the next Active command time (T15). Confidential - 65 of 84 - DO n+4 DO n+5 DO n+6 DO n+7 TRANSITIONING DATA Don't Care Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 40. Write Timing Definition and parameters CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP WL = AL + CWL Notes 4 Bank Col n ADDRESS tDQSS(min) tWPRE(min) tDQSS tDSH tDSH tDSH tDSH tWPST(min) DQS, DQS# tDQSH(min) tDQSL tDQSL tDQSH DQ tDQSH Din n tDQSH tDQSL tDSS tDSS Notes 2 tDQSL tDSS Din n+2 Din n+4 Din n+3 tDQSH tDSS Din n+6 tDQSL(min) tDSS Din n+7 DM tDQSS(nominal) tDSH tWPRE(min) tDSH tDSH tDSH tWPST(min) DQS, DQS# tDQSH(min) tDQSL tDQSH tDSS Notes 2 DQ tDQSL tDSS Din n tDQSH Din n+2 tDQSL tDSS tDQSH tDQSL Din n+4 Din n+3 tDQSH tDQSL(min) tDSS tDSS Din n+6 Din n+7 DM tDQSS(max) tDQSS tWPRE(min) tDSH tDSH tDSH tDSH tWPST(min) DQS, DQS# tDQSH(min) tDQSL tDQSH tDSS Notes 2 DQ tDQSL tDQSH tDSS Din n tDQSL tDQSH tDSS Din n+2 Din n+3 tDQSH tDQSL(min) tDQSL tDSS Din n+4 tDSS Din n+6 Din n+7 DM NOTES: 1. BL8, WL = 5 (AL = 0, CWL = 5) 2. DIN n = data-in from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0. 5. tDQSS must be met at each rising clock edge. TRANSITIONING DATA Confidential - 66 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 41. WRITE Burst Operation WL = 5 (AL = 0, CWL = 5, BL8) CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP WL = AL + CWL Notes 4 ADDRESS Bank, Col n tWPST tWPRE DQS, DQS# DQ Notes 2 Din n Din n+1 Din n+2 Din n+3 Din n+4 Din n+5 Din n+6 Din n+7 NOTES: 1. BL8, WL = 5; AL = 0, CWL = 5. 2. DIN n = data-in from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0. TRANSITIONING DATA Don't Care Figure 42. WRITE Burst Operation WL = 9 (AL = CL-1, CWL = 5, BL8) CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 CK Notes 3 COMMAND Notes 4 ADDRESS NOP NOP NOP NOP NOP NOP Bank, Col n tWPRE DQS, DQS# DQ Notes 2 Din n CWL = 5 AL = 4 Din n+1 Din n+2 Din n+3 WL = AL + CWL NOTES: 1. BL8, WL = 9; AL = (CL - 1), CL = 5, CWL = 5. 2. DIN n = data-in from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0. TRANSITIONING DATA Confidential - 67 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 43. WRITE(BC4) to READ (BC4) operation CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 Tn CK Notes 3 COMMAND NOP NOP NOP NOP NOP tWTR Notes 4 ADDRESS READ Notes 5 Bank, Col n tWPST tWPRE DQS, DQS# DQ Notes 2 Din n WL = 5 Din n+1 Din n+2 Din n+3 RL = 5 NOTES: 1. BC4, WL = 5, RL = 5. 2. DIN n = data-in from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0 and READ command at Tn. 5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the last write data shown at T7. TRANSITIONING DATA TIME BREAK Don't Care , Figure 44. WRITE(BC4) to Precharge Operation CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 Tn CK Notes 3 COMMAND NOP NOP NOP NOP NOP tWR Notes 4 ADDRESS PRE Notes 5 Bank, Col n tWPST tWPRE DQS, DQS# DQ Notes 2 WL = 5 Din n Din n+1 Din n+2 Din n+3 NOTES: 1. BC4, WL = 5, RL = 5. 2. DIN n = data-in from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0. 5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7. tWR specifies the last burst write cycle until the precharge command can be issued to the same bank . TIME BREAK Confidential - 68 of 84 - TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 45. WRITE(BC4) OTF to Precharge operation CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 Ta0 Ta1 NOP PRE NOP Ta2 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP tWR 4 Clocks Notes 4 ADDRESS NOP Notes 5 Bank Col n VALID tWPST tWPRE DQS, DQS# Notes 2 DQ Din n WL = 5 Din n+1 Din n+2 Din n+3 NOTES: 1. BC4 OTF, WL = 5 (CWL = 5, AL = 0) 2. DIN n (or b) = data-in from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 OTF setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0. 5. The write recovery time (tWR) starts at the rising clock edge T9 (4 clocks from T5). TIME BREAK TRANSITIONING DATA Don't Care Figure 46. WRITE(BC8) to WRITE(BC8) CK# T0 T1 T2 WRITE NOP NOP T3 T4 NOP WRITE T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP NOP CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP tCCD Notes 4 ADDRESS NOP Bank Col n NOP tWR tWTR 4 Clocks Bank Col b tWPST tWPRE DQS, DQS# Notes 2 DQ Din n WL = 5 Din n+1 Din n+2 Din n+3 Din n+4 Din n+5 Din n+6 Din n+7 Din b Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 WL = 5 NOTES: 1. BL8, WL = 5 (CWL = 5, AL = 0) 2. DIN n (or b) = data-in from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0 and T4. 5. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from the first rising clock edge after the last write data shown at T13. TRANSITIONING DATA Don't Care Figure 47. WRITE(BC4) to WRITE(BC4) OTF CK# T0 T1 T2 WRITE NOP NOP T3 T4 NOP WRITE T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP T14 CK Notes 3 COMMAND Notes 4 ADDRESS NOP NOP NOP NOP NOP NOP tCCD Bank Col n NOP tWR tWTR 4 Clocks Bank Col b tWPRE tWPST tWPRE tWPST DQS, DQS# Notes 2 DQ WL = 5 Din n Din n+1 Din n+2 Din n+3 Din b Din b+1 Din b+2 Din b+3 WL = 5 NOTES: 1. BC4, WL = 5 (CWL = 5, AL = 0) 2. DIN n (or b) = data-in from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0 and T4. 5. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from the first rising clock edge at T13 (4 clocks from T9). TRANSITIONING DATA Confidential - 69 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 48. WRITE(BC8) to READ(BC4,BC8) OTF T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# T11 T12 T13 T14 NOP READ NOP CK Notes 3 COMMAND NOP tWTR Notes 4 Bank Col n ADDRESS Bank Col b tWPST tWPRE DQS, DQS# Notes 2 DQ Din n WL = 5 Din n+1 Din n+2 Din n+3 Din n+4 Din n+5 Din n+6 RL = 5 Din n+7 NOTES: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0) 2. DIN n = data-in from column n; DOUT b = data-out from column b. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0. READ command at T13 can be either BC4 or BL8 depending on MR0[A1:0] and A12 status at T13. TRANSITIONING DATA Don't Care Figure 49. WRITE(BC4) to READ(BC4,BC8) OTF CK# T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP READ NOP CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP NOP tWTR 4 Clocks Notes 4 ADDRESS Bank Col n Bank Col b tWPST tWPRE DQS, DQS# Notes 2 DQ Din n WL = 5 Din n+1 Din n+2 RL = 5 Din n+3 NOTES: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL =5, AL = 0) 2. DIN n = data-in from column n; DOUT b = data-out from column b. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0. READ command at T13 can be either BC4 or BL8 depending on A12 status at T13. TRANSITIONING DATA Don't Care Figure 50. WRITE(BC4) to READ(BC4) CK# CK T0 T1 T2 T3 T4 WRITE NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP T14 Notes 3 COMMAND NOP NOP NOP NOP NOP NOP READ NOP tWTR Notes 4 ADDRESS Bank Col n tWPST tWPRE Bank Col b DQS, DQS# Notes 2 RL = 5 DQ WL = 5 Din n Din n+1 Din n+2 Din n+3 NOTES: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL =5, AL = 0) 2. DIN n = data-in from column n; DOUT b = data-out from column b. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 10]. Confidential - 70 of 84 - TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 51. WRITE(BC8) to WRITE(BC4) OTF CK# T0 T1 WRITE NOP T2 T3 T4 T5 NOP NOP WRITE T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP NOP CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP NOP tCCD NOP tWR tWTR 4 Clocks Notes 4 ADDRESS Bank Col n Bank Col b tWPST tWPRE DQS, DQS# Notes 2 DQ Din n WL = 5 Din n+1 Din n+2 Din n+3 Din n+4 Din n+5 Din n+6 Din n+7 Din b Din b+1 Din b+2 Din b+3 WL = 5 NOTES: 1. WL = 5 (CWL = 5, AL = 0) 2. DIN n (or b) = data-in from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T4. TRANSITIONING DATA Don't Care Figure 52. WRITE(BC4) to WRITE(BC8) OTF CK# T0 T1 T2 WRITE NOP NOP T3 T4 T5 NOP WRITE T6 T7 T8 T9 T10 T11 T12 T13 NOP NOP NOP T14 CK Notes 3 COMMAND NOP NOP NOP NOP NOP NOP tCCD NOP tWR tWTR 4 Clocks Notes 4 ADDRESS Bank Col n Bank Col b tWPRE tWPST tWPRE tWPST DQS, DQS# Notes 2 DQ Din n WL = 5 Din n+1 Din n+2 Din n+3 Din b Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 WL = 5 NOTES: 1. WL = 5 (CWL = 5, AL = 0) 2. DIN n (or b) = data-in from column n (or column b). 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during WRITE command at T4. TRANSITIONING DATA Don't Care Figure 53. Refresh Command Timing CK# T0 T1 REF NOP Ta0 Ta1 REF NOP Tb0 Tb1 Tb2 Tb3 VALID VALID VALID VALID Tc0 Tc1 Tc2 Tc3 VALID VALID CK COMMAND NOP tRFC tRFC (min) NOP REF VALID tREFI (max. 9 * tREFI) DRAM must be idle DRAM must be idle NOTES: 1. Only NOP/DES commands allowed after Refresh command registered until tRFC(min) expires. 2. Time interval between two Refresh commands may be extended to a maximum of 9 x tREFI. Confidential VALID - 71 of 84 - TIME BREAK TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 54. Self-Refresh Entry/Exit Timing T0 CK# T1 T2 CK Ta0 Tb0 Tc0 tCKSRE tIS Tc1 Td0 Tf0 Teo tCKSRX tCPDED CKE VALID VALID tCKESR tIS ODT VALID ODTL Notes 1 COMMAND NOP SRE SRX NOP NOP Notes 2 Notes 3 VALID VALID VALID VALID tXS ADDR tRP tXSDLL Exit Self Refresh Enter Self Refresh NOTES: 1. Only NOP or DES command. 2. Valid commands not requiring a locked DLL. 3. Valid commands requiring a locked DLL. TIME BREAK Don't Care Figure 55. Active Power-Down Entry and Exit Timing Diagram CK# T0 T1 VALID NOP T2 Ta0 Ta1 Tb0 Tb1 Tc0 NOP NOP NOP VALID VALID VALID CK COMMAND NOP tPD tIS CKE ADDRESS tIH tIS tIH tCKE VALID VALID tXP tCPDED Enter Power-Down Mode Exit Power-Down Mode NOTE: VALID command at T0 is ACT, NOP, DES or PRE with still one bank remaining open after completion of the precharge command. TIME BREAK Confidential - 72 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 56. Power-Down Entry after Read and Read with Auto Precharge T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 RD or RDA NOP NOP NOP NOP NOP NOP NOP NOP CK# Ta7 Ta8 Tb0 Tb1 NOP NOP VALID CK COMMAND NOP tCPDED tIS CKE VALID ADDRESS VALID VALID tPD RL = AL + CL DQS, DQS# DQ BL8 DQ BC4 tRDPDEN Din b Din b+1 Din b+2 Din b+3 Din b Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 Power - Down Entry TRANSITIONING DATA TIME BREAK Don't Care Figure 57. Power-Down Entry after Write with Auto Precharge CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Tb2 Tc0 Tc1 NOP NOP VALID CK COMMAND tIS tCPDED CKE ADDRESS VALID Bank, Col n VALID WR WL = AL + CWL tPD Notes 1 A10 DQS, DQS# DQ BL8 Din b Din b+1 Din b+2 Din b+3 DQ BC4 Din b Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 Start Internal Precharge tWRAPDEN Power - Down Entry NOTES: 1. WR is programmed through MR0. Confidential TIME BREAK - 73 of 84 - TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 58. Power-Down Entry after Write T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# Tb1 Tb2 Tc0 Tc1 NOP NOP VALID CK COMMAND NOP tIS tCPDED CKE ADDRESS VALID Bank, Col n VALID tWR WL = AL + CWL tPD A10 DQS, DQS# DQ BL8 Din b Din b+1 Din b+2 Din b+3 DQ BC4 Din b Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 tWRPDEN Power - Down Entry TRANSITIONING DATA TIME BREAK Don't Care Figure 59. Precharge Power-Down (Fast Exit Mode) Entry and Exit CK# T0 T1 VALID NOP T2 Ta0 Ta1 Tb0 Tb1 Tc0 NOP NOP NOP VALID VALID VALID CK COMMAND tIS tCPDED NOP tIH CKE tIS tPD Enter Power-Down Mode Confidential Exit Power-Down Mode - 74 of 84 - tCKE tXP TIME BREAK Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 60. Precharge Power-Down (Slow Exit Mode) Entry and Exit CK# T0 T1 VALID NOP T2 Ta0 Ta1 Tb0 Tb1 Tc0 Td0 NOP NOP NOP VALID VALID VALID VALID VALID CK COMMAND tIS tCPDED NOP tXPDLL tIH CKE tCKE tIS tPD Enter Power-Down Mode tXP Exit Power-Down Mode TIME BREAK Don't Care Figure 61. Refresh Command to Power-Down Entry T0 T1 T2 T3 Ta0 Ta1 COMMAND VALID REF NOP NOP NOP VALID ADDRESS VALID VALID CK# CK VALID tIS tCPDED tPD VALID CKE tREFPDEN TIME BREAK Confidential - 75 of 84 - Don't Care Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 62. Active Command to Power-Down Entry T0 T1 T2 T3 Ta0 Ta1 COMMAND VALID ACTIVE NOP NOP NOP VALID ADDRESS VALID VALID CK# CK VALID tIS tCPDED tPD VALID CKE tACTPDEN TIME BREAK Don't Care Figure 63. Precharge, Precharge all command to Power-Down Entry T0 T1 T2 T3 Ta0 Ta1 COMMAND VALID PRE or PREA NOP NOP NOP VALID ADDRESS VALID VALID CK# CK VALID tIS tCPDED tPD CKE VALID tPREPDEN TIME BREAK Confidential - 76 of 84 - Don't Care Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 64. MRS Command to Power-Down Entry T0 T1 Ta0 Ta1 COMMAND MRS NOP NOP NOP ADDRESS VALID CK# Tb0 Tb1 CK VALID VALID tCPDED tIS tPD CKE VALID tMRSPDEN TIME BREAK Don't Care Figure 65. Synchronous ODT Timing Example (AL = 3; CWL = 5; ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6) CK# CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T12 T11 T13 T14 T15 CKE AL = 3 AL = 3 CWL - 2 ODT ODTH4, min ODTLoff = CWL + AL - 2 ODTLon = CWL + AL - 2 tAOF(min) tAON(min) DRAM_RTT RTT_NOM tAON(max) tAOF(max) TRANSITIONING DATA Don't Care Figure 66. Synchronous ODT example with BL = 4, WL = 7 CK# CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP CKE ODTH4min ODTH4 COMMAND NOP NOP NOP NOP NOP NOP NOP WRS4 ODTH4 NOP NOP ODT ODTLon = WL - 2 DRAM_RTT tAON(min) ODTLoff = WL - 2 ODTLon = WL - 2 ODTLoff = WL - 2 tAOF(min) tAOF(min) tAON(max) RTT_NOM tAON(max) tAOF(max) tAON(min) tAOF(max) TRANSITIONING DATA Confidential - 77 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 67. Dynamic ODT Behavior with ODT being asserted before and after the write CK# CK COMMAND T0 T1 T2 T3 T4 NOP NOP NOP NOP WRS4 ADDRESS T5 T6 NOP T7 NOP NOP T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP VALID ODTH4 ODTH4 ODTLoff ODT ODTLon ODTLcwn4 tAON(min) RTT tADC(min) tADC(min) RTT_NOM tAOF(min) RTT_WR tAON(max) RTT_NOM tADC(max) tADC(max) tAOF(max) ODTLcnw DQS, DQS# DQ Din n Din n+1 Din n+2 Din n+3 WL TRANSITIONING DATA NOTES: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the registration of the Write command. In this example, ODTH4 would be satisfied if ODT went low at T8 (4 clocks after the Write command). Don't Care Figure 68. Dynamic ODT: Behavior without write command, AL = 0, CWL = 5 CK# T0 T1 T2 VALID VALID VALID T3 T4 T5 T6 T7 VALID VALID VALID VALID VALID T8 T9 T10 T11 VALID VALID VALID CK COMMAND VALID ADDRESS ODTLoff ODTH4 ODT ODTLon tADC(min) tAON(min) RTT RTT_NOM tADC(max) tAON(max) DQS, DQS# DQ NOTES: 1. ODTH4 is defined from ODT registered high to ODT registered low, so in this example, ODTH4 is satisfied. 2. ODT registered low at T5 would also be legal. TRANSITIONING DATA Confidential - 78 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 69. Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 6 clock cycles CK# T0 T1 T2 T3 T4 T5 NOP WRS8 NOP NOP NOP T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP CK COMMAND NOP NOP NOP ODTLcnw ADDRESS VALID ODTH8 ODTLon ODTLoff ODT tAON(min) tAOF(min) RTT RTT_WR tADC(max) ODTLcwn8 tAOF(max) DQS, DQS# WL Din b DQ Din b+1 Din b+2 Din b+3 Din b+4 Din b+5 Din b+6 Din b+7 NOTES: Example for BL8 (via MRS or OTF), AL = 0, CWL = 5. In this example, ODTH8 = 6 is exactly satisfied. TRANSITIONING DATA Don't Care Figure 70. Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 6 clock cycles, example for BC4 (via MRS or OTF), AL = 0, CWL = 5. CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK COMMAND ODTLcnw ADDRESS VALID ODTH4 ODTLon ODTLoff ODT tAON(min) RTT RTT_WR ODTLcwn4 tAOF(min) tADC(min) RTT_NOM tAOF(max) tADC(max) tADC(max) DQS, DQS# WL Din n DQ Din n+1 Din n+2 Din n+3 NOTES: 1. ODTH4 is defined from ODT registered high to ODT registered low, so in this example, ODTH4 is satisfied. TRANSITIONING DON’T CARE 2. ODT registered low at T5 would also be legal. TRANSITIONING DATA Confidential - 79 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 71. Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 4 clock cycles CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK COMMAND ODTLcnw ADDRESS VALID ODTH4 ODTLon ODTLoff ODT tAON(min) tAOF(min) RTT RTT_WR ODTLcwn4 tAOF(max) tADC(max) DQS, DQS# WL Din n DQ Din n+1 Din n+2 Din n+3 NOTES: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example, ODTH4 = 4 is exactly satisfied. TRANSITIONING DATA Don't Care Figure 72. Asynchronous ODT Timings on DDR3 SDRAM with fast ODT transition CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 CK CKE tIH tIS tIH tIS ODT tAONPD(min) tAOFPD(min) RTT RTT tAONPD(max) tAOFPD(max) TRANSITIONING DATA Confidential - 80 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 73. Synchronous to asynchronous transition during Precharge Power Down CK# T0 (with DLL frozen) entry (AL = 0; CWL = 5; tANPD = WL - 1 = 4) T1 T2 REF NOP T3 T4 T5 T6 T7 T8 NOP NOP NOP NOP NOP NOP T9 T10 T12 T11 T13 Ta0 Ta1 Ta2 Ta3 CK COMMAND NOP CKE tRFC (min) tANPD tCPDED(min) PD entry transition period Last sync. ODT tAOF(min) RTT RTT ODTLoff tAOFPD(max) tAOF(max) ODTLoff + tAOFPD(min) Sync. or async. ODT tAOFPD(min) RTT RTT ODTLoff + tAOFPD(max) First async. ODT tAOFPD(min) RTT RTT tAOFPD(max) TIME BREAK TRANSITIONING DATA Don't Care Figure 74. Synchronous to asynchronous transition after Refresh command CK# T0 (AL = 0; CWL = 5; tANPD = WL - 1 = 4) T1 T2 REF NOP T3 T4 T5 T6 T7 T8 NOP NOP NOP NOP NOP NOP T9 T10 T12 T11 T13 Ta0 Ta1 Ta2 Ta3 CK COMMAND NOP CKE tRFC (min) tANPD tCPDED(min) PD entry transition period Last sync. ODT RTT tAOF(min) RTT ODTLoff tAOFPD(max) tAOF(max) ODTLoff + tAOFPD(min) Sync. or async. ODT tAOFPD(min) RTT RTT ODTLoff + tAOFPD(max) First async. ODT RTT tAOFPD(min) RTT tAOFPD(max) TIME BREAK Confidential - 81 of 84 - TRANSITIONING DATA Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 75. Asynchronous to synchronous transition during Precharge Power Down CK# (with DLL frozen) exit (CL = 6; AL = CL - 1; CWL = 5; tANPD = WL - 1 = 9) T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Tb0 NOP NOP NOP NOP NOP NOP NOP Tb1 Tb2 Tc0 Tc1 Tc2 Td0 Td1 NOP NOP NOP NOP NOP NOP CK COMMAND CKE NOP tXPDLL tANPD PD exit transition period Last async. ODT RTT tAOFPD(min) RTT tAOFPD(max) ODTLoff + tAOF(min) tAOFPD(max) Sync. or async. ODT tAOFPD(min) RTT RTT ODTLoff + tAOF(max) ODTLoff First sync. ODT tAOF(min) RTT RTT tAOF(max) TIME BREAK TRANSITIONING DATA Don't Care Figure 76. Transition period for short CKE cycles, entry and exit period overlapping (AL = 0, WL = 5, tANPD = WL - 1 = 4) CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK COMMAND CKE tANPD tRFC (min) PD entry transition period PD exit transition period tANPD tXPDLL short CKE low transition period CKE tANPD short CKE high transition period tXPDLL TIME BREAK Confidential - 82 of 84 - Rev.1.0 Don't Care Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN Figure 77. 78-Ball FBGA Package 8x10.5x1.0mm(max) Outline Drawing Information Symbol A A1 D E D1 E1 e b Confidential Dimension in inch Min Nom Max --0.039 0.012 -0.016 0.311 0.315 0.319 0.409 0.413 0.417 -0.252 --0.378 --0.031 -0.016 0.018 0.020 - 83 of 84 - Dimension in mm Min Nom Max --1.00 0.25 -0.40 7.90 8.00 8.10 10.40 10.50 10.60 -6.40 --9.60 --0.80 -0.40 0.45 0.50 Rev.1.0 Aug. 2017 AS4C64M8D3-12BIN AS4C64M8D3-12BCN PART NUMBERING SYSTEM AS4C 64M8D3 DRAM 64M8=64Mx8 D3=DDR3 12 12=800MHz B B = FBGA N C/I XX C=Commercial Packing Type (0° C~+95° C) Indicates Pb and None:Tray I=Industrial Halogen Free TR:Reel (-40° C~+95° C) Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 Tel: 650-610-6800 Fax: 650-620-9211 www.alliancememory.com Copyright © Alliance Memory All Rights Reserved © Copyright 2007 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. Confidential - 84 of 84 - Rev.1.0 Aug. 2017