AS7C34098A-10JCN

AS7C34098A August 2004 ® 3.3 V 256 K × 16 CMOS SRAM Features • Pin compatible with AS7C34098 • Industrial and commercial temperature • Organization: 262,144 words × 16 bits • Center power and ground pins • High speed • Easy memory expansion with CE, OE inputs • TTL- and CMOS-compatible, three-state I/O • JEDEC standard packages - 44-pin SOJ -400-mil - 44-pin TSOP 2 - 48-pin Mini BGA - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA • Low power consumption: ACTIVE - 650 mW /max @ 10 ns • Low power consumption: STANDBY - 28.8 mW /max CMOS • Individual byte read/write controls Logic block diagram Pin arrangement for SOJ and TSOP 2 Bottom View 48BGA Selection guide –10 –12 –15 –20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 4 5 6 7 ns Industrial 180 160 140 110 mA Commercial 170 150 130 100 mA 8 8 8 8 mA Maximum operating current Maximum CMOS standby current 11/14/11, v. 2.2 Alliance Memory Inc. P. 1 of 11 Copyright © Alliance Memory Inc. All rights reserved. AS7C34098A ® Functional description The AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16. All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 3.3V (AS7C34098A) supply. The device is available in the JEDEC standard 400-mil, 44-pin SOJ, TSOP 2. Absolute maximum ratings Parameter Symbol Min Max Unit Voltage on VCC relative to GND Vt1 –0.50 +5.0 V Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V Power dissipation PD – 1.5 W Storage temperature (plastic) Tstg –65 +150 °C Ambient temperature with VCC applied Tbias –55 +125 °C DC current into outputs (low) IOUT – ±20 mA Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE WE OE LB UB I/O1–I/O8 I/O9–I/O16 Mode H X X X X High Z High Z Standby (ISB, ISB1) L H H X X High Z High Z L X X H H Output disable (ICC) L H D OUT High Z H L High Z DOUT L L DOUT DOUT L L H L L X L H DIN High Z H L High Z DIN L L DIN DIN Read (ICC) Write (ICC) Key: X = Don’t care, L = Low, H = High. 11/14/11,v. 2.2 Alliance Memory Inc P. 2 of 11 AS7C34098A ® Recommended operating conditions Parameter Symbol Supply voltage VIH Unit 3.0 3.3 3.6 V 2.0 – VCC + 0.5 V * –0.5 – 0.8 V VIL Ambient operating temperature Max ** VCC (10/12/15/20) Input voltage Min Typical commercial TA 0 – 70 °C industrial TA –40 – 85 °C * V min = –1.0V for pulse width less than 5ns. IL * VIH max = VCC + 2.0V for pulse width less than 5ns. DC operating characteristics (over the operating range)1 –10 Parameter Symbol Input leakage current Test conditions –12 –15 –20 Min Max Min Max Min Max Min Max Unit |ILI| VCC = Max VIN = GND to VCC – 1 – 1 – 1 – 1 µA Output leakage current |ILO| VCC = Max CE = VIH or OE = VIH or WE = VIL VI/O = GND to VCC – 1 – 1 – 1 – 1 µA Operating power supply current Industrial – 180 – 160 – 140 – 110 mA ICC Commercial - 170 - 150 - 130 - 100 mA – 60 – 60 – 60 – 60 mA – 8 – 8 – 8 – 8 mA VCC = Max CE ≤ V IL, f = fmax I OUT = 0mA VCC = Max CE ≥ VIH, f = Max ISB Standby power supply current ISB1 VCC = Max CE ≥ VCC – 0.2V, VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, f = 0 Output voltage VOL IOL = 8 mA, VCC = Min – 0.4 – 0.4 – 0.4 – 0.4 V VOH IOH = –4 mA, VCC = Min 2.4 – 2.4 – 2.4 – 2.4 – V Capacitance (f = 1MHz, Ta = 25° C, VCC = NOMINAL)2 Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN A, CE, WE, OE, UB, LB VIN = 0V 6 pF I/O capacitance CI/O I/O VIN = VOUT = 0V 8 pF 11/14/11,v. 2.2 Alliance Memory Inc P. 3 of 11 AS7C34098A ® Read cycle (over the operating range)3,9 –10 Parameter –12 –15 –20 Symbol Min Max Min Max Min Max Min Max Unit Notes Read cycle time tRC 10 – 12 – 15 – 20 – ns Address access time tAA – 10 – 12 – 15 – 20 ns Chip enable (CE) access time tACE – 10 – 12 – 15 – 20 ns Output enable (OE) access time tOE – 4 – 5 – 6 – 7 ns Output hold from address change tOH 3 – 3 – 3 – 3 – ns 5 CE Low to output in low Z tCLZ 3 – 3 – 3 – 3 – ns 4, 5 CE High to output in high Z tCHZ – 5 – 6 – 7 – 9 ns 4, 5 OE Low to output in low Z tOLZ 0 – 0 – 0 – 0 – ns 4, 5 OE High to output in high Z tOHZ – 5 – 6 – 7 – 9 ns 4, 5 LB, UB access time tBA – 5 – 6 – 7 – 8 ns LB, UB Low to output in low Z tBLZ 0 – 0 – 0 – 0 – ns LB, UB High to output in high Z tBHZ – 5 – 6 – 7 – 9 ns Power up time tPU 0 – 0 – 0 – 0 – ns 5 Power down time tPD – 10 – 12 – 15 – 20 ns 5 Key to switching waveforms Rising input Falling input Undefined/don’t care Read waveform 1 (address controlled)6,7,9 tRC Address tOH DataOUT 11/14/11,v. 2.2 tAA Previous data valid tOH Data valid Alliance Memory Inc P. 4 of 11 AS7C34098A ® Read waveform 2 (CE, OE, UB, LB controlled)6,8,9 tRC Address tAA OE tOHZ tOE tOH tOLZ CE tACE tCHZ tCLZ LB, UB tBA tBHZ tBLZ DataOUT Data valid Write cycle (over the operating range)10 –10 Parameter Symbol Min –12 –15 –20 Max Min Max Min Max Min Max Unit Note Write cycle time tWC 10 – 12 – 15 – 20 – ns Chip enable (CE) to write end tCW 7 – 8 – 10 – 12 – ns Address setup to write end tAW 7 – 8 – 10 – 12 – ns Address setup time tAS 0 – 0 – 0 – 0 – ns Write pulse width (OE = High) tWP1 7 – 8 – 10 – 12 – ns Write pulse width (OE = Low) tWP2 10 – 12 – 15 – 20 – ns Write recovery time tWR 0 – 0 – 0 – 0 – ns Address hold from end of write tAH 0 – 0 – 0 – 0 – ns Data valid to write end tDW 5 – 6 7 – 9 – ns Data hold time tDH 0 – 0 – 0 – 0 – ns 4, 5 Write enable to output in High-Z tWZ 0 5 0 6 0 7 0 9 ns 4, 5 Output active from write end tOW 3 – 3 – 3 – 3 – ns 4, 5 Byte enable Low to write end tBW 7 – 8 – 10 – 12 – ns 4, 5 11/14/11,v. 2.2 Alliance Memory Inc P. 5 of 11 AS7C34098A ® Write waveform 1(WE controlled)10 tWC tAH tWR Address tCW CE tBW LB, UB tAW tAS tWP WE tDW DataIN Data valid tWZ DataOUT tDH tOW Data undefined High Z Write waveform 2 (CE controlled)10 tWC tAH tWR Address tAS CE tCW tAW tBW LB, UB tWP WE tDW DataIN DataOUT 11/14/11,v. 2.2 tCLZ High Z tWZ Data undefined Alliance Memory Inc tDH Data valid tOW High Z P. 6 of 11 AS7C34098A ® Write waveform 3 10 tWC tAH tWR Address tAS tCW CE tAW tBW LB, UB tWP WE tDW DataIN Data valid tDH tWZ DataOUT Data undefined High Z High Z AC test conditions - Output load: see Figure B. Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V. +3.0V GND +3.3V DOUT 10% 10% 2 ns Figure A: Input pulse 350Ω 168Ω C DOUT GND Figure B: 3.3V Output load Notes 1 2 3 4 5 6 7 8 9 10 11 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A and B. tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. All write cycle timings are referenced from the last valid address to the first transitioning address. C=30pF, except on High Z and Low Z parameters, where C=5pF. 11/14/11,v. 2.2 Alliance Memory Inc P. 7 of 11 AS7C34098A ® Package dimensions c e He 44-pin TSOP 2 d l A2 A 0–5° A1 b E e E1E2 Pin 1 c B A A1 11/14/11,v. 2.2 A A1 A2 B b c D E E1 E2 e 44-pin SOJ 400 mils Min(mils) Max(mils) 0.128 0.148 0.025 0.105 0.115 0.026 0.032 0.015 0.020 0.007 0.013 1.120 1.130 0.370 NOM 0.395 0.405 0.435 0.445 0.050 NOM D 44-pin SOJ b A A1 A2 b c d e He E l 44-pin TSOP 2 Min (mm) Max (mm) 1.2 0.05 0.15 0.95 1.05 0.3 0.45 0.21 0.12 18.31 18.52 10.06 10.26 11.68 11.94 0.80 (typical) 0.40 0.60 Seating Plane A2 E Alliance Memory Inc P. 8 of 11 AS7C34098A ® Outline of 48BGA 11/14/11,v. 2.2 Alliance Memory Inc P. 9 of 11 AS7C34098A ® Ordering Codes Package SOJ BGA TSOP 2 Temperature 10 ns Commercial AS7C34098A-10JC 12 ns AS7C34098A-12JC 15 ns 20 ns AS7C34098A-15JC AS7C34098A-20JC Industrial AS7C34098A-10JI AS7C34098A-12JI AS7C34098A-15JI AS7C34098A-20JI Industrial AS7C34098A-10BIN Commercial AS7C34098A-10TC AS7C34098A-12TC AS7C34098A-15TC AS7C34098A-20TC Industrial AS7C34098A-10TI AS7C34098A-12TI AS7C34098A-15TI AS7C34098A-20TI Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts. (EX: AS7C34098A - 10TCN) Part numbering system AS7C SRAM prefix 11/14/11,v. 2.2 X 4098A –XX J / T or B Voltage: Device Access 3 - 3.3V CMOS number time Packages: J: SOJ 400 mil T: TSOP 2 B: BGA Alliance Memory Inc X X Temperature ranges: C: Commercial, 0°C to 70°C N = Lead Free Parts I: Industrial, –40°C to 85°C P. 10 of 11 AS7C34098A ® ® Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 Tel: 650-610-6800 Fax: 650-620-9211 www.alliancememory.com Copyright © Alliance Memory All Rights Reserved Part Number: AS7C34098A Document Version: v. 2.2 © Copyright 2003 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. 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