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AME5172AEEV330Z

AME5172AEEV330Z

  • 厂商:

    AME(安茂)

  • 封装:

  • 描述:

    AME5172AEEV330Z - 0.85V Single Cell Boost DC-DC Converter - Analog Microelectronics

  • 数据手册
  • 价格&库存
AME5172AEEV330Z 数据手册
AME, Inc. AME5172 n General Description The AME5172 is a high-efficiency, current mode, synchronous PWM Boost DC-DC Converter with fixed 3.3V output voltage for system applications powered by single or double cell NiMH or Alkaline battery pack. Built-in 0.35Ω NMOS switch and 0.45Ω PMOS synchronous rectification significantly improves efficiency and reduces external components count. High switching frequency (at 1.2MHz) allows easy filtering and faster loop performance. AME5172 uses SOT-25 package that gives a small size solution. 0.85V Single Cell Boost DC-DC Converter n Typical Application L1 4.7µH VIN CIN 4.7µF 1 5 VOUT 3.3V up to 200mA COUT 4.7µF IN SW AME5172 OUT OFF ON 3 EN GND 4 2 n Features l PWM Control with 1.2MHz Fixed Frequency l Up to 92% Efficiency l 0.85V Low Start-up Input Voltage l Internal Synchronous Rectifier l Fixed 3.3V Output Voltage Options l 0.8A, 0.35Ω Power MOSFET l 1µA Shutdown Current l True Shutdown l SOT-25 Package l All AME's Lead Free Products Meet RoHS Standards n Applications l Hand-held Devices l Digital Cameras l Portable Applications l MP3 Players l LCD Bias Power l W ireless Handsets Rev. A.02 1 AME, Inc. AME5172 n Function Block Diagram 0.85V Single Cell Boost DC-DC Converter IN EN SW Enable Bandgap Start-UP OSC VOUT Good 2.3V OUT Erroramp Σ OSC Ramp PWM COMP PWM Control SYNC Driver Current Limit COMP Current sense GND 2 Rev. A.02 AME, Inc. AME5172 n Pin Configuration SOT-25 Top View 5 4 0.85V Single Cell Boost DC-DC Converter AME5172AEEV 1. IN 2. GND AME5172 3. EN 4. OUT 5. SW 1 2 3 * Die Attach: Conductive Epoxy n Pin Description Pin Number 1 2 3 Pin Name IN GND EN Pin Description Input Supply Pin. Place bypass capacitor as close to VIN as possible. Ground connection Pin. Enable Control Input Pin. (Active High) Power Output Pin. PCB layout from output capacitor should be as short and wide as possible.. This is the switch pin and is connected to the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 4 OUT 5 SW Rev. A.02 3 AME, Inc. AME5172 n Ordering Information AME5172 x x x x xxx x Special Feature Output Voltage Number of Bumps Package Type Operating Ambient Temperature Range Pin Configuration 0.85V Single Cell Boost DC-DC Converter Pin Configuration A (SOT-25) Operating Ambient Temperature Range E: -40OC to 85OC Package Type Number of Pins V: 5 Output Voltage Special Feature 1. IN 2. GND 3. EN 4. OUT 5. SW E: SOT-2x 330: 3.3V Z: Lead free n Ordering Information Part Number AME5172AEEV330Z Marking* BTWww Output Voltage 3.3V Package SOT-25 Operating Ambient Temperature Range -40OC to 85OC Note: ww represents the date code and pls refer to Date Code Rule on Package Dimension. * A line on top of the first letter represents lead free plating such as BTW. Please consult AME sales office or authorized Rep./Distributor for the availability of package type. 4 Rev. A.02 AME, Inc. AME5172 n Absolute Maximum Ratings Parameter Input Voltage EN, Output Voltages Switch Voltage ESD Classification 0.85V Single Cell Boost DC-DC Converter Symbol V IN VEN ,VOUT VSW Maximum -0.3 to 6 -0.3 to 6 -0.3 to 6 B* Unit V V V Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V exclude SW pin. n Recommended Operating Conditions Parameter Ambient Temperature Range Junction Temperature Range Storage Temperature Range Symbol TA TJ TSTG Rating -40 to 85 -40 to 125 -65 to 150 Unit o C n Thermal Information Parameter Thermal Resistance* (Junction to Case) Thermal Resistance (Junction to Ambient) Internal Power Dissipation Solder Iron (10Sec)** SOT-25 Conductive Epoxy Package Die Attach Symbol θJC θJA PD Maximum 81 Unit o C/W 260 400 350 mW o C * Measure θJC on backside center of molding compund if IC has no tab. ** MIL-STD-202G 210F Rev. A.02 5 AME, Inc. AME5172 n Electrical Specifications VIN = 1.2 V, EN = VIN, VOUT=3.3V, TA = 25OC unless otherwise noted. Parameter Input Voltage Output Voltage Minimum Start-Up Voltage Quiescent Current Shutdown Current NMOS Switch Current Limit NMOS Switch RDSON PMOS Switch RDSON Switching Frequency Maximum Duty Cycle EN Input Current N/PMOS Leakage Current EN Input Threshold (High) (Enable the device) EN Input Threshold (Low) (Shutdown) Symbol V IN V OUT V ST IQ ISD ICL RON,N RON,P VOUT = 3.3V VOUT = 3.3V 0.85 80 EN = GND or VIN VSW = 5V for NMOS, 0V for PMOS 1 ILOAD = 1mA Measured on VOUT EN = GND 600 800 0.35 0.45 1.2 87 1 5 VIN V 0.35 1.5 Test Condition Min 0.85 3.217 3.3 0.85 500 1 µA mA Ω MHz % µA µA Typ Max Note 1 3.383 V Units 0.85V Single Cell Boost DC-DC Converter fSW DMAX IEN ISW EN Threshold Note 1: VIN
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