BLA1011-10

BLA1011-10 Avionics LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS 1 • Avionics transmitter applications in the 1030 to 1090 MHz frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Top view MBK584 Fig.1 Simplified outline (SOT467C). QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 1030 to 1090 36 10 >15 >40 MODE OF OPERATION Pulsed class-AB; tp = 50 µs; δ = 2 % ORDERING INFORMATION PACKAGE TYPE NUMBER BLA1011-10 NAME DESCRIPTION VERSION − flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Ptot total power dissipation − 25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 2003 Nov 19 Th ≤ 25 °C 2 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Zth(j-mb) thermal impedance from junction to mounting base Tmb = 25 °C; note 1 1.2 K/W Rth(mb-h) thermal resistance from mounting base to heatsink note 2 0.55 K/W MAX. UNIT Notes 1. Thermal impedance is determined under RF operating conditions with pulsed bias. 2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.7 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 0.1 mA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.55 K/W unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) tr (ns) tf (ns) PULSE DROOP (dB) Pulsed class-AB; tp = 50 µs; δ = 2% 1030 to 1090 36 50 10 >15 >40