BLA1011-2

BLA1011-2 Avionics LDMOS transistor Rev. 6 — 6 May 2013 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. Table 1. Typical performance RF performance at Th = 25 °C in a common source test circuit. Mode of operation f VDS PL Gp (MHz) (V) (W) (dB) Pulsed class-AB; tp = 50 s;  = 2% 1030 to 1090 36 2 >16 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  High power gain  Easy power control  Excellent ruggedness  Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications  Avionics applications in the 1030 to 1090 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source, connected to mounting base Simplified outline Graphic symbol 1 1 3 2 3 sym112 2 BLA1011-2 NXP Semiconductors Avionics LDMOS transistor 3. Ordering information Table 3. Ordering information Type number BLA1011-2 Package Name Description Version - ceramic surface mounted package; 2 leads SOT538A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 75 V VGS gate-source voltage - 15 V - 2.2 A 10 W ID drain current (DC) Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - 200 C Th  25 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Typ Unit Zth(j-mb) thermal impedance from junction to mounting base Conditions [1] 1 K/W Rth(mb-h) thermal resistance from mounting base to heatsink [2] 6.5 K/W [1] Thermal impedance is determined under RF operating conditions with pulsed bias and Th = 25 C. [2] Typical value for mounting on PCB with 32 0.4 mm thermal vias with 20 m tin plating and thermal compound between PCB and heatsink. 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. BLA1011-2 Product data sheet Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 75 - - V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 2 - 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V - - 0.1 mA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 - - A IGSS gate leakage current VGS = 15 V; VDS =0 - - 40 nA All information provided in this document is subject to legal disclaimers. Rev. 6 — 6 May 2013 © NXP B.V. 2013. All rights reserved. 2 of 10 BLA1011-2 NXP Semiconductors Avionics LDMOS transistor Table 6. Characteristics …continued Tj = 25 C unless otherwise specified. Symbol Parameter gfs Conditions Min Typ Max Unit forward transconductance VDS = 10 V; ID = 0.75 A - 0.5 - S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A - 1.2 -  Cis input capacitance VGS = 0 V; VDS = 26 V; f = 1 MHz - 11 - pF Cos output capacitance VGS = 0 V; VDS = 26 V; f = 1 MHz - 9 - pF Crs feedback capacitance VGS = 0 V; VDS = 26 V; f = 1 MHz - 0.5 - pF 7. Application information Table 7. RF performance in a common source class-AB circuit Th = 25 C; Rth mb-h = 6.5 K/W unless otherwise specified. Mode of operation Pulsed class-AB; tp = 50 s;  = 2% f VDS IDQ PL Gp tr tf Pulse droop (MHz) (V) (mA) (W) (dB) (ns) (ns) (dB) 1030 to 1090 36 50 2 >16