BLC10G18XS-550AVT
Power LDMOS transistor
Rev. 1 — 21 December 2017
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 28 V; IDq = 800 mA (main); VGS(amp)peak = 0.95 V, unless otherwise specified.
Test signal
1-carrier W-CDMA
[1]
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
1805 to 1880
28
91
16.5
49.3
29.4 [1]
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to
1880 MHz frequency range
BLC10G18XS-550AVT
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain2 (peak)
2
drain1 (main)
3
gate1 (main)
4
gate2 (peak)
Simplified outline
7
1
2, 7
6
5
3
3
5
4
4
[1]
5
source
6
video decoupling (peak)
7
video decoupling (main)
[1]
2
Graphic symbol
1, 6
aaa-014884
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
BLC10G18XS-550AVT -
Version
air cavity plastic earless flanged package; 6 leads
SOT1258-4
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
65
V
VGS(amp)main
main amplifier gate-source voltage
6
+9
V
VGS(amp)peak
peak amplifier gate-source voltage
6
+9
V
Tstg
storage temperature
65
+150
C
junction temperature
[1]
-
225
C
case temperature
[1]
40
+125
C
Tj
Tcase
[1]
Conditions
operating
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
BLC10G18XS-550AVT
Product data sheet
Conditions
Typ
Unit
thermal resistance from junction VDS = 32 V; IDq = 800 mA (main);
to case
VGS(amp)peak = 1.1 V; Tcase = 80 C
PL = 110 W
0.187 k/W
PL = 138 W
0.166 k/W
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
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BLC10G18XS-550AVT
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
VGS = 0 V; ID = 1.8 mA
65
-
-
V
Main device
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
1.5
2.0
2.5
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 800 mA
-
2.2
-
V
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 2.37 V
-
34
-
A
IGSS
gate leakage current
VGS = 9 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 9.0 A
-
20.5 -
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 2.37 V;
ID = 6.3 A
-
72
108
m
VGS = 0 V; ID = 3.8 mA
65
-
-
V
Peak device
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 380 mA
1.5
2.0
2.5
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 2000 mA
-
2.2
-
V
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 2.37 V
-
57
-
A
IGSS
gate leakage current
VGS = 9 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 19.0 A
-
39.0 -
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 2.37 V;
ID = 13.3 A
-
37
m
62
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f1 = 1807.5 MHz; f2 = 1877.5 MHz; RF performance at
VDS = 28 V; IDq = 800 mA (main); VGS(amp)peak = 1.0 V; Tcase = 25 C; unless otherwise specified; in
an asymmetrical Doherty production test circuit at frequencies from 1805 MHz to 1880 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 93 W
15.0
16.0
-
dB
RLin
input return loss
PL(AV) = 93 W
-
19
13
dB
D
drain efficiency
PL(AV) = 93 W
45
50
-
%
ACPR
adjacent channel power ratio
PL(AV) = 93 W
-
26
22
dBc
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f = 1807.5 MHz; RF performance at VDS = 28 V;
IDq = 800 mA (main); VGS(amp)peak = 1.0 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at a frequency of 1805 MHz.
BLC10G18XS-550AVT
Product data sheet
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PARO
output peak-to-average ratio
PL(M)
peak output power
PL(AV) = 118 W
5.8
6.3
-
dB
PL(AV) = 118 W
440
510
-
W
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
3 of 16
BLC10G18XS-550AVT
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLC10G18XS-550AVT is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V;
IDq = 800 mA; VGS(amp)peak = 1.05 V; f = 1807.5 MHz; PL = 213 W (5 dB OBO); 46 %
clipping.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; IDq = 1000 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
f
ZS [1]
ZL [1]
PL [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
1805
1.4 4.9i
1.8 3.1i
269
62.8
17.6
1845
1.6 5.2i
1.8 3.1i
266
63.2
18.0
1880
2.1 5.6i
1.7 3.2i
265
60.7
18.0
Maximum drain efficiency load
BLC10G18XS-550AVT
Product data sheet
1805
1.4 4.9i
3.1 2.3i
213
69.6
19.4
1845
1.6 5.2i
2.8 2.3i
216
69.3
19.6
1880
2.1 5.6i
2.5 2.1i
211
69.2
19.7
[1]
ZS and ZL defined in Figure 1.
[2]
At 3 dB gain compression.
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Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
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BLC10G18XS-550AVT
Power LDMOS transistor
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; IDq = 2100 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
f
ZS [1]
ZL [1]
PL [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
1805
1.7 5.6i
1.0 3.3i
488
57.6
15.8
1845
2.0 6.0i
1.0 3.4i
481
56.3
16.0
1880
2.6 6.5i
1.1 3.5i
475
56.0
16.2
Maximum drain efficiency load
1805
1.7 5.6i
1.7 2.6i
378
66.0
17.7
1845
2.0 6.0i
1.5 2.4i
343
65.4
18.2
1880
2.6 6.5i
1.5 2.5i
356
65.1
18.2
[1]
ZS and ZL defined in Figure 1.
[2]
At 3 dB gain compression.
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main at 1 : 1 load
Measured load-pull data of main device; IDq = 1000 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
BLC10G18XS-550AVT
Product data sheet
f
ZS [1]
ZL [1]
PL(3dB) [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
1805
1.7 j5.0
1.8 j3.6
244
39.9
20.0
1845
2.1 j5.3
1.7 j3.3
247
40.5
20.4
1880
2.5 j5.7
1.7 j3.0
247
41.7
20.8
[1]
ZS and ZL defined in Figure 1.
[2]
At PL(AV) = 115 W.
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Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
5 of 16
BLC10G18XS-550AVT
Power LDMOS transistor
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; IDq = 1000 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
f
ZS [1]
ZL [1]
PL(3dB) [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
1805
1.7 j5.0
3.9 j1.3
144
55.5
22.9
1845
2.1 j5.3
3.8 j1.1
134
56.5
23.5
1880
2.5 j5.7
3.8 j0.8
124
56.4
23.9
[1]
ZS and ZL defined in Figure 1.
[2]
At PL(AV) = 115 W.
Table 13. Typical impedance of peak device at 1 : 1 load
Measured load-pull data of peak device; IDq = 2100 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
ZS [1]
(MHz)
()
()
(W)
(%)
(dB)
1805
1.6 j5.1
1.7 j3.9
397
31.5
18.7
1845
2.0 j5.5
1.6 j3.7
416
31.2
19.0
1880
3.0 j6.4
1.5 j3.5
422
31.5
19.4
[1]
ZS and ZL defined in Figure 1.
[2]
At PL(AV) = 115 W.
Table 14.
BLC10G18XS-550AVT
Product data sheet
ZL [1]
PL(3dB) [2]
D [2]
f
Gp [2]
Off-state impedances of peak device
f
Zoff
(MHz)
()
1805
1.0 j1.2
1845
0.7 j0.4
1880
0.5 + j0.2
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Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
6 of 16
BLC10G18XS-550AVT
Power LDMOS transistor
7.4 Test circuit
110.2 mm
C17
C18
C1
C21
C31
C19
C2
C3
C20
R1
C7
C4
R3
80 mm
X2
C5
X1
C23
C6
C22
C8
C9
C10
C14
R2
C15
C16
C24
C12
C11
C13
C27
C26
C25
C30
C29
C28
amp00543
Printed-Circuit Board (PCB): Rogers RO4350; thickness = 0.508 mm;
thickness copper plating = 35 m.
See Table 15 for a list of components.
Fig 2.
Component layout
Table 15. List of components
See Figure 2 for component layout.
Component
Value
Remarks
C1, C16, C17, C18, C20, multilayer ceramic chip capacitor
C21, C25, C26, C27, C28
4.7 F, 50 V
SMD 1210, Murata:
GRM32ER71H475KA88L
C2, C15
100 nF, 50 V
GRM21BR71H104KA01L
C3, C4, C5, C6,C10, C11, multilayer ceramic chip capacitor
C14, C19, C24, C29
10 pF
SMD 0805, ATC 600F HiQ, 250 V
C7, C9, C22, C23
multilayer ceramic chip capacitor
2.0 pF
SMD 0805, ATC 600F HiQ, 250 V
C8, C13
multilayer ceramic chip capacitor
1.8 pF
SMD 0805, ATC 600F HiQ, 250 V
C12
multilayer ceramic chip capacitor
0.5 pF
SMD 0805, ATC 600F HiQ, 250 V
C30, C31
electrolytic capacitor
470 F, 60 V
R1, R2
resistor
4.7 , 1 %
SMD 0805
R3
resistor
50 , 25 W
Anaren: C16A50Z4
X1
hybrid coupler
2 dB, 90
Anaren Xinger III: X3C20F1-02
X2
attenuator
2 dB, 7 W
Anaren: D10AA2Z4
BLC10G18XS-550AVT
Product data sheet
Description
multilayer ceramic chip capacitor
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Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
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BLC10G18XS-550AVT
Power LDMOS transistor
7.5 Graphical data
7.5.1 Pulsed CW
amp00544
19
60
Gp
(dB)
ηD
(%)
18
50
17
40
amp00545
5
AM to PM
(deg)
-5
(3)
16
30
(1)
(2)
(3)
15
(2)
20
10
Gp
ηD
13
0
25
30
(1)
-25
(1)
(2)
(3)
14
-15
35
40
45
50
55
PL (dBm)
-35
60
30
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
35
40
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
(3) f = 1880 MHz
Power gain and drain efficiency as function of
output power; typical values
BLC10G18XS-550AVT
Product data sheet
50
55
PL (dBm)
60
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
(1) f = 1805 MHz
Fig 3.
45
Fig 4.
Normalized AM to PM as a function of output
power; typical values
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Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
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BLC10G18XS-550AVT
Power LDMOS transistor
7.5.2 1-Carrier W-CDMA
Test signal: 3GPP test model 1; 1 to 64 DPCH (100 % clipping): PAR = 7.5 dB per carrier
at 0.01 % probability on CCDF per carrier.
amp00546
18
60
Gp
(dB)
Gp
17
amp00547
-20
ACPR5M
(dBc)
ηD
(%)
50
(3)
(2)
(1)
-30
16
40
(1)
(2)
(3)
15
30
14
20
13
10
-40
-50
(1)
(2)
(3)
ηD
12
0
25
30
35
40
45
50
PL (dBm)
-60
55
25
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
30
35
45
50
PL (dBm)
55
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
(1) f = 1805 MHz
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 5.
40
(3) f = 1880 MHz
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
amp00548
12
PAR
(dB)
10
(1)
(2)
(3)
8
6
4
25
30
35
40
45
50
PL (dBm)
55
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 7.
Peak-to-average power ratio as a function of output power; typical values
BLC10G18XS-550AVT
Product data sheet
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Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
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BLC10G18XS-550AVT
Power LDMOS transistor
7.5.3 2-Carrier W-CDMA
Test signal: 3GPP test model 1; 1 to 64 DPCH (46 % clipping): PAR = 7.5 dB per carrier at
0.01 % probability on CCDF per carrier.
amp00549
18
60
Gp
(dB)
(3)
(2)
(1)
16
(1)
(2)
(3)
Gp
14
12
amp00550
-20
ACPR5M
(dBc)
ηD
(%)
45
-30
30
-40
15
-50
(1)
(2)
(3)
ηD
10
0
25
30
35
40
45
50
PL (dBm)
-60
55
25
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
30
35
45
50
PL (dBm)
55
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
(1) f = 1805 MHz
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 8.
40
(3) f = 1880 MHz
Power gain and drain efficiency as function of
output power; typical values
Fig 9.
Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
7.5.4 2-Tone VBW
amp00551
0
IMD
(dBc)
-20
(1)
(2)
IMD3
-40
(1)
IMD5
(2)
IMD7
-60
(1)
(2)
-80
1
10
102
carrier spacing (MHz)
103
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
(1) IMD low
(2) IMD high
Fig 10. VBW capability
BLC10G18XS-550AVT
Product data sheet
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Rev. 1 — 21 December 2017
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BLC10G18XS-550AVT
Power LDMOS transistor
7.5.5 Group delay
5
amp00552
td(grp)
(ns)
3
1
-1
-3
-5
1500 1600 1700 1800 1900 2000 2100 2200 2300
f (MHz)
VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 1.05 V.
Fig 11. Group delay time as a function of frequency; typical values
BLC10G18XS-550AVT
Product data sheet
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Rev. 1 — 21 December 2017
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BLC10G18XS-550AVT
Power LDMOS transistor
8. Package outline
Air cavity plastic earless flanged package; 6 leads
SOT1258-4
D
A
F
5
w1
D1
v
B
A
L
b
c
7
2
6
1
y
Į
H1
Z1
Z
H
E1
U2
E
A
3
4
e
Q
w2
b1
U1
B
B
0
10 mm
y
Į
0.1
65°
3.17 5.79
61°
2.67 5.29
scale
Z
Z1
Dimensions
Unit
mm
A
max 4.52
nom
min 4.12
b
b1
1.12
11.78
c
D
D1
E
0.18 31.44 31.34 9.60
E1
H
H1
Q(1)
36.42 1.73
16.71
8.12
2.25
32.33 10.23
36.22 1.53
16.51
7.62
2.03
32.13 10.03
e
9.50
L
F
U1
v
w1
w2
0.5
0.5
0.5
13.72
0.91
11.58
0.13 31.04 31.14 9.20
9.30
Note
1. Dimension Q is measured 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
Outline
version
U2
References
IEC
JEDEC
JEITA
sot1258-4_po
European
projection
Issue date
17-08-31
SOT1258-4
Fig 12. Package outline SOT1258-4
BLC10G18XS-550AVT
Product data sheet
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Rev. 1 — 21 December 2017
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BLC10G18XS-550AVT
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 16.
ESD sensitivity
ESD model
Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
C3 [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
2 [2]
[1]
CDM classification C3 is granted to any part that passes after exposure to an ESD pulse of 1000 V.
[2]
HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
Table 17.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
OBO
Output Back Off
PAR
Peak-to-Average Ratio
SMD
Surface Mounted Device
VBW
Video BandWidth
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 18.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLC10G18XS-550AVT v.1
20171221
Product data sheet
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BLC10G18XS-550AVT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
13 of 16
BLC10G18XS-550AVT
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLC10G18XS-550AVT
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
14 of 16
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Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLC10G18XS-550AVT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
15 of 16
BLC10G18XS-550AVT
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
7.5.4
7.5.5
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in Doherty operation . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Recommended impedances for Doherty design 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 10
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Group delay . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Handling information. . . . . . . . . . . . . . . . . . . . 13
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2017.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 21 December 2017
Document identifier: BLC10G18XS-550AVT
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