BLF6G05LS-200RN,11

BLF6G05LS-200RN Power LDMOS transistor Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 460 to 470 28 40 24 33 43[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Typical 1-carrier W-CDMA performance at frequencies of 460 MHz and 470 MHz, a supply voltage of 28 V and an IDq of 1400 mA:  Average output power = 40 W  Power gain = 24 dB  Efficiency = 33 %  ACPR = 43 dBc  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA and CDMA base stations and multicarrier applications in the 460 MHz to 470 MHz frequency range. BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF6G05LS-200RN - Version earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 49 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C 5. Thermal characteristics Table 5. BLF6G05LS-200RN Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 40 W All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 Typ Unit 0.33 K/W © NXP B.V. 2011. All rights reserved. 2 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4 2.0 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1620 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 40 44 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 9.45 A 11 18 26 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.45 A 0.018 0.07 0.114  7. Application information Table 7. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f = 465 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions PL(AV) average output power Min Typ Max Unit 39.2 40 40.8 W Gp power gain PL(AV) = 40 W 22.8 24 - dB IRL input return loss PL(AV) = 40 W - 7.5 4 dB D drain efficiency PL(AV) = 40 W 30 33 - % ACPR adjacent channel power ratio PL(AV) = 40 W - 43 41 dBc 7.1 Ruggedness in class-AB operation The BLF6G05LS-200RN is an enhanced rugged device and is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = 200 W; f = 465 MHz. BLF6G05LS-200RN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 8. Test information 8.1 Performance curves 8.1.1 One-Tone Pulsed-CW aaa-001328 27 Gp (db) 26 70 60 Gp 25 50 24 40 23 30 ηD 22 20 21 20 ηD (%) 10 0 50 100 150 0 200 250 PL (W) VDS = 28 V; IDq = 1400 mA; f = 465 MHz. Fig 1. Power gain and drain efficiency as function of load power; typical values 8.1.2 1-carrier W-CDMA aaa-001329 0 ACPR (dBc) -10 ηD 60 50 -20 40 -30 30 -40 ACPR5M -50 -60 ηD (%) 20 10 0 20 40 60 PL (W) 0 80 VDS = 28 V; IDq = 1400 mA; f = 465 MHz. Fig 2. BLF6G05LS-200RN Product data sheet Adjacent channel power ratio as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 8.2 Circuit information Table 8. List of components For application circuit see Figure 3. Component Description Value Remarks C1, C10, C15 multilayer ceramic chip capacitor 10 F Murata C2, C9, C14 multilayer ceramic chip capacitor 0.1 F C3, C12 multilayer ceramic chip capacitor 270 pF [1] C4, C7 multilayer ceramic chip capacitor 56 pF [1] C5 multilayer ceramic chip capacitor 220 pF [1] C6 multilayer ceramic chip capacitor 18 pF [1] C8, C13 multilayer ceramic chip capacitor 390 pF [1] C11, C16 electrolytic capacitor 2200 F; 50 V R1, R2 SMD resistor 9.1  [1] Murata American Technical Ceramics type 100B or capacitor of same quality. R1 C1 C10 C2 6.3 mm 28 mm 30.6 mm 11.7 mm 13.9 mm 16.7 mm C9 C11 46.2 mm 51.2 mm R2 C4 C5 C8 C3 8.4 mm C12 C6 C7 C16 C15 C13 C14 aaa-001330 The striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with r = 3.48 and thickness = 20 mil. See Table 8 for a list of components. Fig 3. Component layout for application circuit BLF6G05LS-200RN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 4. 0.390 0.010 0.380 Package outline SOT502B BLF6G05LS-200RN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mount Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G05LS-200RN v.2.0 20111108 Product data sheet - BLF6G05LS-200RN v.1.0 Modifications: BLF6G05LS-200RN v.1.0 BLF6G05LS-200RN Product data sheet • • • • The status of this data sheet has been changed to Product data sheet • • Table 7 on page 3: Several values have been updated Table 1 on page 1: The value for Gp has been updated Section 1.2 on page 1: The value for power gain has been updated Table 6 on page 3: The typical value for IDSX has been updated, row for Crs has been removed Section 8 on page 4: This section has been added 20110511 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 - © NXP B.V. 2011. All rights reserved. 7 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from competent authorities. BLF6G05LS-200RN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 10 BLF6G05LS-200RN NXP Semiconductors Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G05LS-200RN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 10 NXP Semiconductors BLF6G05LS-200RN Power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 8.1 8.1.1 8.1.2 8.2 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 4 One-Tone Pulsed-CW. . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 4 Circuit information. . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Handling information. . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 November 2011 Document identifier: BLF6G05LS-200RN