BLF878
UHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
Table 1.
Typical performance
RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit.
Mode of operation f
PL
PL(PEP) PL(AV) Gp
D
IMD3
(MHz)
(W)
(W)
(W)
(dB) (%) (dBc)
CW, class AB
860
300
-
-
21
60
-
2-Tone, class AB
f1 = 860; f2 = 860.1 -
300
-
21
46
35
-
-
21
45
-
-
75
21
32
32 [2]
PAL BG
860 (ch69)
300 (peak sync.)
DVB-T (8k OFDM)
858
-
[1]
[1]
Black video signal, sync expansion: input sync = 33 %; output sync 27 %.
[2]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:
Peak envelope power load power = 300 W
Power gain = 21 dB
Drain efficiency = 46 %
Third order intermodulation distortion = 35 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:
Average output power = 75 W
Power gain = 21 dB
Drain efficiency = 32 %
Third order intermodulation distortion = 32 dBc (4.3 MHz from center frequency)
BLF878
UHF power LDMOS transistor
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input and output matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
1
Graphic symbol
2
1
5
3
3
[1]
source
5
4
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
BLF878
BLF878#3
Product data sheet
-
Version
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
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BLF878
UHF power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
VGS
Conditions
Min
Max
Unit
drain-source voltage
-
89
V
gate-source voltage
0.5
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C;
PL(AV) = 150 W
Rth(c-h)
thermal resistance from case to heatsink
Typ
Unit
[1]
0.23
K/W
[2]
0.15
K/W
[1]
Rth(j-c) is measured under RF conditions.
[2]
Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device.
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.25 mA
Product data sheet
89
-
105.5 V
[1]
1.4
1.9
2.4
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 225 mA
IDSS
drain leakage current
VGS = 0 V; VDS = 42 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGSth + 3.75 V;
VDS = 10 V
35
39
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
140
nA
forward transconductance
gfs
BLF878#3
Unit
[1]
VDS = 10 V; ID = 11.2 A
-
-
[1]
-
15.5 -
S
-
110
-
m
RDS(on)
drain-source on-state resistance VGS = VGSth + 3.75 V;
ID = 7.6 A
[1]
Ciss
input capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
[2]
-
190
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
[2]
-
60
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
[2]
-
2
-
pF
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
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Rev. 3 — 1 September 2015
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3 of 19
BLF878
UHF power LDMOS transistor
001aai075
350
Coss
(pF)
250
150
50
0
20
40
60
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
7. Application information
Table 7.
RF performance in a common-source narrowband 860 MHz test circuit
Tcase = 25 C unless otherwise specified.
Mode of operation
2-Tone, class AB
DVB-T (8k OFDM)
BLF878#3
Product data sheet
D
f
VDS IDq
PL(PEP)
PL(AV)
Gp
(MHz)
(V)
(A)
(W)
(W)
(dB) (%)
f1 = 860; f2 = 860.1
40
1.4[1] 300
-
> 18 > 42 < 31
40
1.4[1]
75
> 18 > 29 < 29 [2]
858
-
[1]
IDq = 1.4 A for total device.
[2]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
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Rev. 3 — 1 September 2015
IMD3
(dBc)
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BLF878
UHF power LDMOS transistor
7.1 Narrowband RF figures
7.1.1 CW
001aai076
24
Gp
(dB)
80
ηD
(%)
(2)
(1)
60
22
Gp
(2)
20
ηD
40
(1)
20
18
16
0
100
200
0
400
300
PL (W)
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 2.
BLF878#3
Product data sheet
CW power gain and drain efficiency as a function of load power; typical values
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Rev. 3 — 1 September 2015
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5 of 19
BLF878
UHF power LDMOS transistor
7.1.2 2-Tone
001aai077
22
Gp
Gp
(dB)
60
(1)
ηD
(%)
(2)
001aai078
−10
IMD3
(dBc)
−20
20
(2)
ηD
40
(1)
−30
18
(1)
(2)
20
−40
16
0
100
200
0
300
400
PL(AV) (W)
−50
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
0
100
(1) VDS = 40 V
(1) VDS = 40 V
(2) VDS = 42 V
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
BLF878#3
Product data sheet
300
400
PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(2) VDS = 42 V
Fig 3.
200
Fig 4.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
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BLF878
UHF power LDMOS transistor
7.1.3 DVB-T
001aai079
23
Gp
(dB)
60
ηD
(%)
(2)
(1)
Gp
21
001aai080
−15
IMD3
(dBc)
40
−25
20
−35
(1)
(2)
ηD
19
(1)
(2)
17
0
50
100
150
0
200
250
PL(AV) (W)
−45
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
0
50
(1) VDS = 40 V
(1) VDS = 40 V
(2) VDS = 42 V
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
BLF878#3
Product data sheet
150
200
250
PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(2) VDS = 42 V
Fig 5.
100
Fig 6.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
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BLF878
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 2-Tone
001aai081
22
Gp
(dB)
(2)
(1)
Gp
18
ηD
(%)
60
14
−20
(1)
(2)
40
500
IMD3
(dBc)
(1)
(2)
ηD
10
400
600
700
20
800
900
f (MHz)
−40
−60
400
PL(AV) = 150 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
Product data sheet
600
700
800
900
f (MHz)
PL(AV) = 150 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(2) VDS = 42 V
2-Tone power gain and drain efficiency as a
function of frequency; typical values
BLF878#3
500
(1) VDS = 40 V
(2) VDS = 42 V
Fig 7.
001aai082
0
80
Fig 8.
2-Tone third order intermodulation distortion
as a function of frequency; typical values
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Rev. 3 — 1 September 2015
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BLF878
UHF power LDMOS transistor
7.2.2 DVB-T
001aai083
22
ηD
(%)
(2)
(1)
Gp
(dB)
Gp
18
IMD3
(dBc)
−20
40
(1)
(2)
ηD
(1)
(2)
14
−40
20
10
400
500
600
001aai084
0
60
−60
400
0
800
900
f (MHz)
700
PL(AV) = 77 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
500
(1) VDS = 40 V
(1) VDS = 40 V
(2) VDS = 42 V
DVB-T power gain and drain efficiency as
functions of frequency; typical values
700
800
900
f (MHz)
PL(AV) = 77 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(2) VDS = 42 V
Fig 9.
600
Fig 10. DVB-T third order intermodulation distortion
as a function of frequency; typical values
001aai085
10
PAR
(dB)
9
(2)
(1)
8
7
6
5
400
500
600
700
800
900
f (MHz)
PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8.
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
BLF878#3
Product data sheet
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Rev. 3 — 1 September 2015
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BLF878
UHF power LDMOS transistor
7.3 Ruggedness in class-AB operation
The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated
power.
7.4 Impedance information
ZL
drain
Zi
gate
001aai086
Fig 12. Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W.
BLF878#3
Product data sheet
f
Zi
ZL
MHz
300
0.933 j1.376
6.431 j4.296
325
0.959 j0.986
6.889 j3.911
350
0.988 j0.628
7.237 j3.476
375
1.020 j0.295
7.475 j3.017
400
1.057 + j0.017
7.610 j2.559
425
1.097 + j0.314
7.652 j2.120
450
1.143 + j0.598
7.614 j1.713
475
1.194 + j0.871
7.512 j1.348
500
1.251 + j1.137
7.359 j1.031
525
1.315 + j1.397
7.168 j0.762
550
1.388 + j1.652
6.949 j0.542
575
1.470 + j1.903
6.712 j0.368
600
1.563 + j2.152
6.465 j0.237
625
1.668 + j2.398
6.214 j0.145
650
1.788 + j2.642
5.962 j0.089
675
1.925 + j2.885
5.714 j0.064
700
2.082 + j3.125
5.472 j0.066
725
2.262 + j3.362
5.238 j0.093
750
2.470 + j3.594
5.012 j0.141
775
2.711 + j3.816
4.796 j0.207
800
2.989 + j4.025
4.590 j0.289
825
3.310 + j4.213
4.394 j0.385
850
3.680 + j4.369
4.208 j0.493
875
4.103 + j4.478
4.031 j0.611
900
4.580 + j4.519
3.864 j0.737
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BLF878
UHF power LDMOS transistor
Table 8.
Typical push-pull impedance …continued
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W.
f
Zi
ZL
MHz
925
5.103 + j4.467
3.706 j0.871
950
5.656 + j4.291
3.556 j1.011
975
6.205 + j3.963
3.415 j1.157
1000
6.696 + j3.463
3.281 j1.308
7.5 Reliability
001aai087
106
Years
105
104
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
103
102
10
1
0
4
8
12
16
20
24
IDS(DC) (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 13. BLF878 electromigration (IDS(DC), total device)
BLF878#3
Product data sheet
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BLF878
UHF power LDMOS transistor
8. Test information
Table 9.
List of components
For test circuit, see Figure 14, Figure 15 and Figure 16.
Component
Description
Value
B1, B2
semi rigid coax
25 ; 43.5 mm
C1, C2
multilayer ceramic chip capacitor
8.2 pF
[1]
C3, C9
multilayer ceramic chip capacitor
3.9 pF
[2]
C4
multilayer ceramic chip capacitor
2.7 pF
[2]
C5, C7, C8
multilayer ceramic chip capacitor
6.8 pF
[1]
C6
multilayer ceramic chip capacitor
2.2 pF
[2]
C10
multilayer ceramic chip capacitor
47 pF
[2]
C11, C12
multilayer ceramic chip capacitor
100 pF
[1]
C13, C14
multilayer ceramic chip capacitor
100 pF
[2]
C15, C16
multilayer ceramic chip capacitor
10 F
C17, C18
electrolytic capacitor
470 F; 63 V
C20
multilayer ceramic chip capacitor
15 pF
C21
trimmer
0.6 pF to 4.5 pF
C22
multilayer ceramic chip capacitor
11 pF
[3]
C23
multilayer ceramic chip capacitor
3.9 pF
[3]
C24
multilayer ceramic chip capacitor
4.7 pF
[3]
C25, C26, C27
multilayer ceramic chip capacitor
100 pF
[3]
C28, C29
multilayer ceramic chip capacitor
560 pF
[2]
C30, C31
electrolytic capacitor
10 F
L1
stripline
-
[4]
(W L) 24 mm 13 mm
L2
stripline
-
[4]
(W L) 15 mm 24.5 mm
L3
stripline
-
[4]
(W L) 5 mm 21 mm
-
[4]
(W L) 2.4 mm 6 mm
(W L) 2 mm 43.5 mm
L4
stripline
Remarks
EZ90-25-TP
TDK C570X7R1H106KT000N or
capacitor of same quality.
[3]
Tekelec
L5, L23
stripline
-
[4]
L6
stripline
-
[4]
(W L) 2 mm 4.5 mm
L7
stripline
-
[4]
(W L) 5.5 mm 24 mm
-
[4]
(W L) 15 mm 5 mm
(W L) 3 mm 39 mm
(W L) 2.4 mm 5.7 mm
L20
stripline
L21
stripline
-
[4]
L22
stripline
-
[4]
R1, R2
resistor
5.6
R3, R4
potentiometer
10 k
R5, R6
resistor
10 k
R7, R8
resistor
1 k
[1]
American technical ceramics type 180R or capacitor of same quality.
[2]
American technical ceramics type 100B or capacitor of same quality.
long wires
[3]
American technical ceramics type 100A or capacitor of same quality.
[4]
Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF878#3
Product data sheet
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BLF878
UHF power LDMOS transistor
+ VG1(test)
R7
R3
C13
+ VD1(test)
R5
C15
C17
C30
C28
R1
50 Ω
C25
C8
C5 C6 C9
C26
C24
L22
C22 C21 C20
C3 C4
C1 C2
C11
L4 C10
C29
R2
C27
50 Ω
B1
B2
L21
L23
L3
L5
C7
L2
L20
C31
C12
L1
L6
R6
L7
+ VD2(test)
C14
R4
C16
C18
R6
+ VG2(test)
001aai088
See Table 9 for a list of components.
Fig 14. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate
test voltages
L7
L6
L20
L23
L5
L1
L2
L3
L21
L22
80 mm
95 mm
95 mm
001aai089
Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier
BLF878#3
Product data sheet
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Rev. 3 — 1 September 2015
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BLF878
UHF power LDMOS transistor
C13
+VG1(test)
+VD1(test)
C15
C17
R7
4
mm
C28
C26
C25
C27
R2
C23
C24
C8
C21
C22
BLF878
C30
R1
C4
C2
C1
C5
C6
C9
C3
C10
C12
7
mm
C20
R4
B2
R8
C11
C7
C31
R6
B1
18
mm
R3
R5
3.6
mm
12
mm
C29
C18
C14
C16
+VG2(test)
+VD2(test)
12
mm
22
mm
001aai090
See Table 9 for a list of components.
Fig 16. Component layout for class-AB common source amplifier
BLF878#3
Product data sheet
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Rev. 3 — 1 September 2015
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BLF878
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT979A
D
A
F
D1
U1
B
q
C
H1
1
H
2
w2
C
w1
A
c
B
p
U2
E
E1
5
L
3
4
A
w3
b
Q
e
w3
0.25
0
5
10 mm
scale
0.010
Dimensions
Unit(1)
mm
A
b
c
D
D1
E
E1
e
F
H
H1
L
1.969 17.50 25.53 3.86
max 5.77 11.81 0.15 31.55 31.37 10.29 10.29
13.72
nom
min 4.80 11.56 0.10 30.94 31.12 10.03 10.03
1.689 17.25 25.27 3.35
q
p
Q
3.30
3.02
3.05
2.77
U1
U2
w1
w2
0.25
0.51
41.28 10.29
35.56
41.02 10.03
0.078 0.689 1.005 0.152 0.130 0.119
1.625 0.405
max 0.227 0.465 0.006 1.242 1.235 0.405 0.405
0.540
inches nom
1.400
0.010 0.020
min 0.189 0.455 0.004 1.218 1.225 0.395 0.395
0.067 0.679 0.995 0.132 0.120 0.109
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot979a_po
European
projection
Issue date
08-04-24
08-09-04
SOT979A
Fig 17. Package outline SOT979A
BLF878#3
Product data sheet
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Rev. 3 — 1 September 2015
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BLF878
UHF power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
CCDF
Complementary Cumulative Distribution Function
DVB
Digital Video Broadcast
DVB-T
Digital Video Broadcast - Terrestrial
ESD
ElectroStatic Discharge
IMD3
Third order InterModulation Distortion
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM
Orthogonal Frequency Division Multiplexing
PAL
Phase Alternating Line
PAR
Peak-to-Average power Ratio
PEP
Peak Envelope Power
RF
Radio Frequency
TTF
Time To Failure
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF878#3
20150901
Product data sheet
-
BLF878_2
Modifications:
•
The format of this document has been redesigned to comply with the new identity guidelines of
Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF878_2
20090615
Product data sheet
-
BLF878_1
BLF878_1
20081215
Preliminary data sheet
-
-
BLF878#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
16 of 19
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UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
BLF878#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
17 of 19
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UHF power LDMOS transistor
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit:
http://www.ampleon.com
BLF878#3
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
18 of 19
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UHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.1.1
7.1.2
7.1.3
7.2
7.2.1
7.2.2
7.3
7.4
7.5
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Broadband RF figures . . . . . . . . . . . . . . . . . . . 8
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ruggedness in class-AB operation . . . . . . . . 10
Impedance information . . . . . . . . . . . . . . . . . . 10
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Test information . . . . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF878#3
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