AWT6166R

AWT6166R GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control FEATURES • • • Integrated Vreg (regulated supply) Harmonic Performance ≤ -20 dBm High Efficiency (PAE) at Pmax: -GSM850, 53% -GSM900, 55% -DCS, 53% -PCS, 53% +35 dBm GSM850/900 Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55 dB Dynamic Range GPRS Class 12 Capable RoHS Compliant Package, 250°C MSL-3 Data Sheet - Rev 2.0 • • • • • APPLICATIONS • Dual/Tri/Quad Band Handsets & PDAs M15 Package 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166R input and output terminals are internal matched to 50 ohms and DC blocked, VCC2 reducing the number of external components required in the final application. Both PA die, GSM850/900 and DCS/PCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCS/PCSIN BS TX EN MATCH MATCH DCS/PCSOUT CMOS BIAS/Integrated Power Control VBATT CEXT VRAMP VCC_OUT H(s) GSM850/900IN MATCH MATCH GSM850/900OUT VCC2 Figure 1: Block Diagram 02/2006 AWT6166R VCC2 GND DCS/PCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN 1 2 3 4 5 6 7 18 17 16 15 14 13 12 11 DCS/PCS_OUT GND GND VCC_OUT GND GND GSM_OUT 8 9 10 Figure 2: Pinout (X- ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 NAME DESCRIPTION PIN 10 11 12 13 14 15 16 17 NAME GSM_OUT GND GND VCC_OUT GND GND DESCRIPTION GSM850/900 RF Output Ground Ground Control Voltage Output which must be connected to VCC2 Ground Ground DCS/PCS_IN DCS/PCS RF Input BS Tx_EN VBATT C EXT VRAMP GSM_IN VCC2 Band Select Logic Input TX Enable Logic Input Battery Supply Connection Bypass Analog Signal used to control the output power GSM850/900 RF Input VCC Control Input for GSM850/900 Pre-amplifier Ground VCC 2 GND DCS/PCS_OUT DCS/PCS RF Output GND Ground VCC Control Input for DCS/PCS Pre-amplifier 9 GND 18 VCC2 2 Data Sheet - Rev 2.0 02/2006 AWT6166R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltages (VRAMP) Storage Temperature (TSTG) MIN -0.3 - 55 MAX +7 11 1.8 150 UNIT V dB m V °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Digital Inputs PARAMETER Logic High Voltage (VIH) Logic Low Voltage (VIL) Logic High Current (IIH) Logic Low Current (IIL) MIN 1.2 TYP MAX 3.0 0.5 30 30 UNIT V V µA µA Table 4: Control Logic Table MODE PA Enable GSM850/900 Mode DCS/PCS Mode PA Disable T x_E N HIGH HIGH HIGH LOW BS X LOW HIGH X Data Sheet - Rev 2.0 02/2006 3 AWT6166R VCC2 >+2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V 1 GHz All load phases, POUT ≤ 34.5 dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT ≤ 34.5 dBm POUT ≤ 34.5 dBm RX Noise Power - -87 -83 dB m Input VSWR - 1.5:1 2.5:1 - 6 Data Sheet - Rev 2.0 02/2006 AWT6166R Table 7: Electrical Characteristics for GSM900 Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PARAMETER Operating Frequency (FO) Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (Coupling of GSM 2fo and 3fo to DCS/PCS port) Harmonics 2fo, 3fo n*FO, (n ≥ 4), FO ≤ 12.75 GHz MIN 880 0 34.5 32.5 50 TYP 3.0 35.0 33.5 55 -38 -25 MAX 915 5 -33 -20 UNIT MHz dB m dB m dB m % dB m dB m Freq = 880 to 915 MHz VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 880 to 915MHz TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm POUT ≤ 34.5 dBm COMMENTS - -23 -17 dB m - -22 -30 -10 -10 dB m POUT ≤ 34.5 dBm VSWR = 8:1 All Phases, POUT ≤ 34.5 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT ≤ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT ≤ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960MHz, POUT ≤ 34.5 dBm POUT ≤ 34.5 dBm RX Noise Power - -84 -77 dB m -87 -83 dB m Input VSWR - 1.5:1 2.5:1 - Data Sheet - Rev 2.0 02/2006 7 AWT6166R Table 8: Electrical Characteristics for DCS Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics 2FO, 3FO n*FO, (n ≥ 4), FO ≤ 12.75 GHz MIN 1710 0 32 30 45 TYP 3.0 33 31 53 -40 -22 MAX 1785 5 -35 -17 UNIT MHz dB m dB m dB m % dB m dB m VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 1710 to 1785 MHz TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm POUT ≤ 32 dBm COMMENTS - -22 -20 -10 -8 dB m VSWR = 8:1 All Phases, POUT ≤ 32 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT ≤ 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to 1880 MHz, POUT ≤ 32 dBm POUT ≤ 32 dBm RX Noise Power - -86 -80 dB m Input VSWR - 1.5:1 2.5:1 8 Data Sheet - Rev 2.0 02/2006 AWT6166R Table 9: Electrical Characteristics for PCS Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics 2FO, 3FO n*FO, (n ≥ 4), FO ≤ 12.75 GHz MIN 1850 0 32 30 45 TYP 3.0 33 31 53 -40 -22 MAX 1910 5 -33 -17 UNIT MHz dB m dB m dB m % dB m dB m VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 1850 to 1910 MHz TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm COMMENTS - -25 -20 -10 -5 dB m POUT ≤ 32 dBm VSWR = 8:1 All Phases, POUT ≤ 32 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT ≤ 32 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT ≤ 32 dBm POUT ≤ 32 dBm RX Noise Power - -86 -80 dB m Input VSWR - 1.5:1 2.5:1 Data Sheet - Rev 2.0 02/2006 9 AWT6166R APPLICATION INFORMATION Figure 4: Application Schematic 10 Data Sheet - Rev 2.0 02/2006 AWT6166R PACKAGE OUTLINE Figure 5: M15 Package Outline - 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module Figure 6: Branding Specification Data Sheet - Rev 2.0 02/2006 11 AWT6166R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE -20 oC to +85 oC PACKAGE DESCRIPTION RoHS Compliant 18 P i n 6 mm x 6 mm x 1.3 mm COMPONENT PACKAGING AWT6166RM15P8 Tape and Reel, 2500 per reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 Data Sheet - Rev 2.0 02/2006