AWT6310R

Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module • AWT6310R Data Sheet - Rev 2.0 FEATURES Single Mode Operation: POUT  +28 dBm High Efficiency: 39 % 25 % Package Size Reduction Common VMODE Control Line Simplified VCC Bus PCB routing Reduced External Component Count Low Profile Surface Mount Package: 1.1 mm RoHS Compliant Package, 250 oC MSL-3 CDMA/EVDO Cell & PCS dual-band Wireless Handsets and Data Devices • • • • • • • • AW T 631 0R APPLICATIONS M23 Package 12 Pin 3 mm x 5 mm x 1 mm Surface Mount Module The AWT6310R meets the increasing demands for higher levels of integration in dual-band CDMA/PCS 1X handsets, while reducing board area requirements by 25 %. The package pinout was chosen to enable handset manufacturers to easily route VCC to both power amplifiers and simplify control with a common VMODE pin. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art PRODUCT DESCRIPTION reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 3 mm x 5 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system. GND at slug (pad) VREF_CELL 1 Bias Control 12 GND RFIN_CELL 2 11 RFOUT_CELL VMODE 3 10 VCC2 A VCC1 4 9 VCC2 RFIN_PCS 5 Bias Control 8 GND VREF_PCS 6 7 RFOUT_PCS GND Figure 1: Block Diagram 09/2008 AWT6310R GND VREF_CELL RFIN_CELL VMODE VCC1 RFIN_PCS VREF_PCS 1 2 3 4 5 6 GND Figure 2: Pinout 12 11 10 9 8 7 GND RFOUT_CELL VCC2A VCC2 GND RFOUT_PCS Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 11 12 NAME VREF_CELL RFIN_CELL VMODE VCC1 RFIN_PCS VREF_PCS RFOUT_PCS GND VCC2 VCC2A DESCRIPTION Reference Voltage for Cell Band RF Input for Cell Band Mode Control Voltage Supply Voltage RF Input for PCS Band Reference Voltage for PCS Band RF Output for PCS Band Ground Supply Voltage Supply Voltage RFOUT_CELL RF Output for Cell Band GND Ground 2 Data Sheet - Rev 2.0 09/2008 AWT6310R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC ) With RF Drive DC Only Mode Control Voltage (VMODE) Reference Voltage (VREF) RF Input Power (PIN) Storage Temperature (TSTG) MIN 0 0 0 0 -40 MAX +5 +8 +3.5 +3.5 +10 +150 UNIT V V V dBm °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC) Reference Voltage (VREF) Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) MIN 824 1850 +3.2 +2.75 0 +2.5 0 30.5(1) 27.5(1) -30 TYP +3.4 +2.85 +2.85 31.0 28.0 MAX 849 1910 +4.2 +3.1 +0.5 +3.1 +0.5 +85 UNIT MHz V V V dBm °C PA "on" PA "shut down" Low Bias Mode High Bias Mode AMPS CDMA COMMENTS Cellular PCS The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB. Data Sheet - Rev 2.0 09/2008 3 AWT6310R Table 4: Electrical Specifications - Cellular CDMA Operation (Unless Otherwise Specified: TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system) PARAMETER Gain Adjacent Channel Power at 885 kHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kH Adjacent Channel Power at 1.98 MHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Power-Added Efficiency (1) Quiescent Current (Icq) Reference Current Mode Control Current Leakage Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance MIN 24.5 24.0 24.0 37 37 8 TYP 26.5 26.5 25.5 -50 -51 -50 -62 -61 -65 39 40 9 50 1.5 0.6