Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
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AWT6314R
Data Sheet - Rev 2.0
FEATURES
Single Mode Operation: POUT +28 dBm High Efficiency: 39 % 25 % Package Size Reduction Common VMODE Control Line Simplified VCC Bus PCB routing Reduced External Component Count Low Profile Surface Mount Package: 1.1 mm RoHS Compliant Package, 250 oC MSL-3 CDMA/EVDO Cell & PCS dual-band Wireless Handouts and Data Devices
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AW T
631
4
APPLICATIONS
M23 Package 12 Pin 3 mm x 5 mm x 1 mm Surface Mount Module
The AWT6314R meets the increasing demands for higher levels of integration in dual-band CDMA/PCS 1X handsets, while reducing board area requirements by 25 %. The package pinout was chosen to enable handset manufacturers to easily route VCC to both power amplifiers and simplify control with a common VMODE pin. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art
PRODUCT DESCRIPTION
reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 3 mm x 5 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system.
GND at slug (pad)
VREF_PCS 1
Bias Control
12 RFOUT_PCS
RFIN_PCS 2
11 GND
VCC1 3 VMODE 4
10 VCC2
9
VCC2 A
RFIN_CELL 5
Bias Control
8
RFOUT_CELL
VREF_CELL 6
7
GND
GND
Figure 1: Block Diagram
09/2008
AWT6314R
GND VREF_PCS RFIN_PCS VCC1 VMODE RFIN_CELL VREF_CELL 1 2 3 4 5 6 GND
Figure 2: Pinout
12 11 10 9 8 7
RFOUT_PCS GND VCC2 VCC2A RFOUT_CELL GND
Table 1: Pin Description Table
PIN 1 2 3 4 5 6 7 8 9 10 11 12 NAME VREF_PCS RFIN_PCS VCC1 VMODE RFIN_CELL VREF_CELL GND DESCRIPTION Reference Voltage for PCS Band RF Input for PCS Band Supply Voltage Mode Control Voltage RF Input for Cell Band Reference Voltage for Cell Band Ground
RFOUT_CELL RF Output for Cell Band VCC2A VCC2 GND RFOUT_PCS Supply Voltage Supply Voltage Ground RF Output for PCS Band
Data Sheet - Rev 2.0 09/2008
2
AWT6314R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER Supply Voltage (VCC ) With RF Drive DC Only Mode Control Voltage (VMODE) Reference Voltage (VREF) RF Input Power (PIN) Storage Temperature (TSTG) MIN 0 0 0 0 -40 MAX +5 +8 +3.5 +3.5 +10 +150 UNIT V V V dBm °C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER Operating Frequency (f) Supply Voltage (VCC) Reference Voltage (VREF) Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) MIN 824 1850 +3.2 +2.75 0 +2.5 0 30.5(1) 27.5(1) -30 TYP +3.4 +2.85 +2.85 31.0 28.0 MAX 849 1910 +4.2 +3.1 +0.5 +3.1 +0.5 +85 UNIT MHz V V V dBm °C PA "on" PA "shut down" Low Bias Mode High Bias Mode AMPS CDMA COMMENTS Cellular PCS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
Data Sheet - Rev 2.0 09/2008
3
AWT6314R Table 4: Electrical Specifications - Cellular CDMA Operation (TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system)
PARAMETER Gain Adjacent Channel Power at 885 kHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kH Adjacent Channel Power at 1.98 MHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Power-Added Efficiency (1) Quiescent Current (Icq) Reference Current Mode Control Current Leakage Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance MIN 25 24 23.5 37 37 8 TYP 27.0 26.5 25.5 -50 -50 -49 -62 -60 -65 39 40 9 50 1.5 0.6
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