AWT6331RM27Q7

ZeroIC FEATURES TM Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module Data Sheet - Rev 2.1 AWT6331 • • • • • • • • • InGaP HBT Technology High Efficiency: 39 % @ +28 dBm output Zero Quiescent Current in Switch Mode Internal Voltage Regulation Optimized for a 50 Ω System Low Profile Surface Mount Package: 1 mm CDMA 1XRTT, 1xEV-DO Compliant RoHS Compliant Package, 250 oC MSL-3 Suitable for BC10 (806-824 MHz) Applications band CDMA/EVDO Cell-band Wireless Handsets and Data Devices APPLICATIONS • M27 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module RF switch mode, current consumption is less than 10 A, reducing the average current consumption 70% more than a HELP2™ PA over the CDG profile. Its integrated voltage regulator eliminates the need for external components further reducing size and BOM cost. The 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50  system. PRODUCT DESCRIPTION The AWT6331 is a new product in the revolutionary ZeroIC™ PA family. The AWT6331 uses ANADIGICS’ exclusive InGaP-Plus™ technology, which combines HBT and pHEMT devices on the same die, to enable state-of-the-art reliability, temperature stability, and ruggedness. The AWT6331 has a unique architecture with two RF inputs. One input drives the power amplifier while the other input drives an RF switch that bypasses the power amplifier, going directly to the RF output. The mode control logic selects the PA or the RF switch. In GND at slug (pad) VEN 1 Bias Control 10 GND VMODE 2 9 GND RFIN 3 8 RFOUT RFIN_Switch 4 7 VCC VBATT 5 6 VCC Figure 1: Block Diagram 10/2008 AWT6331 GND VEN 1 10 GND VMODE 2 9 GND RFIN_PA 3 8 RFOUT RFIN_Switch 4 7 VCC VBATT 5 6 VCC GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 NAME VEN VMODE RFIN_PA RFIN_SWITCH VBATT VCC VCC RFOUT GND GND DESCRIPTION PA Enable Voltage Mode Control RF Input to PA RF Input to Switch Battery Voltage Supply Voltage Supply Voltage RF Output Ground Ground 2 Data Sheet - Rev 2.1 10/2008 AWT6331 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC and VBATT) Mode Control Voltage (VMODE) Enable Voltage (VEN) RF Input Power (PIN) to PA RF Input Power (PIN) to Switch Storage Temperature (TSTG) MIN 0 0 0 -40 MAX +5 +3.5 +3.5 +10 +20 +150 UNIT V V V dBm dBm °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC and VBATT) Enable Voltage (VEN) Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) MIN 824 +3.2 +2.2 0 +2.2 0 27.5(1) -30 TYP +3.4 +2.4 +2.4 28.0 MAX 849 +4.2 +3.1 +0.5 +3.1 +0.5 +85 UNIT MHz V V V dBm °C PA "on", Switch "on" PA "shut down" PA Mode Switch Mode CDMA COMMENTS The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB. Data Sheet - Rev 2.1 10/2008 3 AWT6331 Table 4: Electrical Specifications - CDMA Operation (IS-95 Modulation) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 Ω system) PARAMETER Gain Insertion Loss Adjacent Channel Power at 885 kHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Adjacent Channel Power at 1.98 MHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Isolation Power-Added Efficiency (1) Enable Current Mode Control Current MIN 25 TYP 28 0.7 MAX 30.5 1.5 UNIT dB COMMENTS POUT = +28 dBm, VMODE = +2.4 V VMODE = 0 V - -50 -70 -46.5 - dBc POUT = +28 dBm, VMODE = +2.4 V VMODE = 0 V 32 36 - -58.5 -70 40 39