APM3009NGC-TU

APM3009N N-Channel Enhancement Mode MOSFET Features • • • • 30V/70A , RDS(ON)=7mΩ(typ.) @ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-220 , TO-252 and TO-263 Packages Pin Description 1 2 3 Applications • Power Management in Desktop Computer or DC/DC Converters. G D S Top View of TO-220, TO-252 and TO-263 Ordering and Marking Information APM 3009N H a n d lin g C o d e Tem p. Range Package Code Package Code F : T O -2 2 0 G : T O -2 6 3 U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 3 0 0 9 N F /G /U : A P M 3009N XXXXX XXXXX - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Parameter Drain-Source Voltage Gate-Source Voltage (TA = 25°C unless otherwise noted) Rating 30 ±20 60 110 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM3009N Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ,TSTG RθJA RθJC Maximum Operating and Storage Junction Temperature Thermal Resistance – Junction to Ambient TO-252 TO-263 Thermal Resistance – Junction to Case TO-252 TO-263 TO-252 TO-263 TO-252 TO-263 (TA = 25°C unless otherwise noted) Rating 50 62.5 20 25 -55 to 150 50 60 2.5 2 °C °C/W °C/W W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a Parameter Drain-Source Breakdown V lt Gate Voltage Drain Zero Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage (TA = 25°C unless otherwise noted) Test Condition APM3009N Typ. Max. Min. 30 1 1 7 11 0.6 22 12.8 5 10 7 35 10 2400 500 240 3 ±100 9 15 1.3 28 nC 15 13 50 20 Unit V µA V nA mΩ V VGS=0V, IDS=250µA VDS=24V , VGS=0V VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=35A VGS=4.5V, IDS=20A ISD=35A, VGS=0V VDS=15V, IDS=20A VGS=4.5V, VDD=15V, IDS=1A, VGEN=10V, RG= 0.2Ω VGS=0V VDS=15V Frequency =1.0MHz VSDa Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 2 www.anpec.com.tw APM3009N Typical Characteristics Output Characteristics 70 50 Transfer Characteristics VDS=10V 40 60 VGS=4,4.5,6,8,10V IDS-Drain Current (A) 50 V GS=3V IDS-Drain Current (A) 40 30 30 20 TJ=25°C 20 V GS=2.5V 10 TJ=125°C TJ=-55°C 10 0 1.0 0 0 1 2 3 4 5 6 7 8 9 10 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 On-Resistance vs. Drain Current 0.015 IDS=250µA VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 0.012 VGS=4.5V 1.0 0.009 VGS=10V 0.8 0.006 0.6 0.003 0.4 -50 -25 0 25 50 75 100 125 150 0.000 0 10 20 30 40 50 60 70 80 90 100 Tj-Junction Temperature (°C) ID-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 3 www.anpec.com.tw APM3009N Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.030 On-Resistaence vs. Junction Temperature 1.6 IDS=35A RDS (ON)-On-Resistance (Ω) RDS(ON)-On Resistance (Ω) (Normalized) 0.025 VGS=10V IDS=35A 1.4 0.020 1.2 0.015 1.0 0.010 0.005 0.8 0.000 3 4 5 6 7 8 9 10 0.6 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) On-Resistaence vs. Junction Temperature 10 10 Gate Charge VDS=15V IDS=20A 8 RDS(ON)-On Resistance (Ω) 9 8 VGS-Gate-to-Source Voltage (V) 0 25 50 75 100 125 150 VGS=10V IDS=35A 6 7 4 6 5 2 4 -50 -25 0 0 10 20 30 40 50 Tj-Junction Temperature (°C) QG-Total-Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 4 www.anpec.com.tw APM3009N Typical Characteristics Cont. Capacitance Characteristics 3000 2000 Source-Drain Diode Forward Voltage 100 Ciss ISD-Source Current (A) C-Capacitance (pF) 10 1000 Coss 500 1 TJ=125°C TJ=25°C TJ=-55°C Crss Frequency=1MHz 100 0.1 1 10 30 0.1 0.0 0.3 0.6 0.9 1.2 1.5 VDS-Drain-to-Source Voltage (V) VSD-Source to Drain Voltage (V) Single Pulse Power TO-252 Single Pulse Power TO-263 3000 3000 2500 2500 Power (W) Power (W) 2000 2000 1500 1500 1000 1000 500 500 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Time (sec) Time (sec) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 5 www.anpec.com.tw APM3009N Typical Characteristics Cont. Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 TO-252 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient TO-263 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=62.5°C/W 3. TJM-TA=PDMZthJA 0 .0 1 - 5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 6 www.anpec.com.tw APM3009N Package Informaion TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 7 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 APM3009N Packaging Information Cont. TO-263 ( Reference JEDEC Registration TO-263) E L2 E1 TERMINAL 4 D L L3 D1 A c2 Φ1 L4 R L1 DETAIL "A"ROTED c Millimeters Dim A b b2 c c2 D E L L1 L2 L3 Min. 4.06 0.51 1.14 1.14 8.64 9.65 14.60 2.24 1.02 1.20 Max. 4.83 1.016 1.651 1.40 9.65 10.54 15.88 2.84 2.92 1.78 Min. 0.160 0.02 0.045 0.045 0.340 0.380 0.575 0.090 0.040 0.050 Inches Max. 0.190 0.040 0.065 0.055 0.380 0.415 0.625 0.110 0.112 0.070 0.38 TYP. 0.015 TYP. Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 8 www.anpec.com.tw APM3009N Package Information Cont. TO-220 ( Reference JEDEC Registration TO-220) D Q R b E e b1 e1 L1 H1 A F L c J1 Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Millimeters Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Inches Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 9 www.anpec.com.tw APM3009N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition temperature (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection 3 °C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. ° Average ramp-up rate(183 C to Peak) Preheat temperature 125 ± 25 °C) ° Temperature maintained above 183 C Time within 5 °C of actual peak temperature Peak temperature range Ramp-down rate Time 25 °C to peak temperature 60 seconds 215~ 219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection220 +5/-0°C VPR 215-219°C ° IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm pkg. thickness < 2.5mm and pkg. volume < Convection 235 +5/-0°C VPR 235 +5/-0°C ° IR/Convection 235 +5/-0 C Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 10 www.anpec.com.tw APM3009N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimension t E Po P P1 D W F Bo Ao D1 T2 Ko J C A B T1 Application TO-252 Application TO-252 Application TO-263 Application TO-263 A 330±3 F 7.5 ± 0.1 A 380±3 F 11.5 ± 0.1 B 100 ± 2 D 1.5± 0.1 B 80 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 1.5+ 0.25 C 13 ± 0. 5 D1 1.5± 0.25 J 2 ± 0.5 Po 4.0 ± 0.1 J 2 ± 0.5 Po 4.0 ± 0.1 T1 16.4 +0.3 -0.2 P1 2.0 ± 0.1 T1 24 ± 4 P1 T2 2.5± 0.5 Ao 6.8 ± 0.1 T2 2± 0.3 Ao W 16 + 0.3 16 - 0.1 Bo 10.4± 0.1 W 24 + 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 P 16 ± 0.1 Ko E 1.75± 0.1 t 0.3±0.05 E 1.75± 0.1 t 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 11 www.anpec.com.tw APM3009N Cover Tape Dimensions Application TO- 252 TO- 263 Carrier Width 16 24 Cover Tape Width 13.3 21.3 Devices Per Reel 2500 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2002 12 www.anpec.com.tw