APM3011NGC-TR

APM3011N N-Channel Enhancement Mode MOSFET Features • • • • 30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-220, TO-252 and TO-263 Packages Pin Description Applications • Power Management in Desktop Computer or DC/DC Converters Systems. Top View of TO-220 , TO-252 and TO-263 Ordering and Marking Information APM3011N Handling Code Temp. Range Package Code Package Code F : TO-220 U :TO-252 Temp. Range C : 0 to 70 ° C Handling Code TU : Tube TR : Tape & Reel G : TO-263 APM 3011N G/U/F : APM 3011N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Gate-Source Voltage Parameter Drain-Source Voltage (TA = 25°C unless otherwise noted) Rating 30 ±20 60 120 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 1 www.anpec.com.tw APM3011N Absolute Maximum Ratings Cont. Symbol PD Parameter Maxim um Power Dissipation T A =25 ° C T A =100 ° C TJ T STG R θ JA R θ JC Maxim um Junction Tem perature Storage Tem perature Range Thermal Resistance – Junction to Ambient Thermal Resistance – Junction to Case TO-252 TO-263 TO-252 TO-263 (TA = 25°C unless otherwise noted) Rating 50 62.5 20 25 150 -55 to 150 50 2.5 Unit W W °C °C ° C/W ° C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSda Dynamicb Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Parameter Drain-Source Breakdown V lt Gate Voltage Drain Zero Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance (TA = 25°C unless otherwise noted) APM3011N Typ. Max. Min. 30 1 5 3 ±100 11 18 1.2 28 nC 14 12 45 16 Test Condition VGS=0V, IDS=250µA VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=30A VGS=5V, IDS=15A ISD=24A, VGS=0V VDS=15V, IDS=30A VGS=4.5V VDD=15V, IDS=1A, VGEN=10V, RG=0.2Ω VGS=0V VDS=15V Frequency =1.0MHz Unit V µA V nA mΩ V 1 9 14 0.6 22 12.8 5 9 6 30 8 2000 420 210 ns pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 2 www.anpec.com.tw APM3011N Typical Characteristics Output Characteristics 70 50 Transfer Characteristics VDS=10V 60 VG=4,4.5,6,8,10V IDS-Drain Current (A) 50 V GS=3V IDS-Drain Current (A) 40 40 30 30 20 TJ=25°C 20 VGS=2.5V 10 TJ=125°C TJ=-55°C 10 0 1.0 0 0 1 2 3 4 5 6 7 8 9 10 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 On-Resistance vs. Drain Current 0.020 IDS=250µA RDS(ON)-On-Resistance (Ω) V GS=5V 0.016 VGS(th)-Variance (V) 1.0 0.012 0.8 V GS=10V 0.008 0.6 0.004 0.4 -50 -25 0 25 50 75 100 125 150 0.000 0 10 20 30 40 50 60 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 3 www.anpec.com.tw APM3011N Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.035 On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) 1.6 IDS=30A RDS (ON)-On-Resistance (Ω) 0.030 VGS=10V IDS=30A 1.4 0.025 0.020 1.2 0.015 1.0 0.010 0.8 0.005 0.000 3 4 5 6 7 8 9 10 0.6 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 3000 Capacitance Characteristics VGS-Gate-to-Source Voltage (V) VDS=15V IDS=20A 2000 Ciss C-Capacitance (pF) 8 1000 6 Coss 500 4 2 Crss Frequency=1MHz 0 0 10 20 30 40 50 100 0.1 1 10 30 QG-Total-Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 4 www.anpec.com.tw APM3011N Typical Characteristics Cont. Source-Drain Diode Forward Voltage 100 3000 Single Pulse Power 2500 ISD-Source Current (A) 10 2000 Power (W) 1500 1 TJ=125°C TJ=25°C TJ=-55°C 1000 500 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 01 05 - - - - 1 04 1 03 1 02 1 01 1 00 VSD-Source to Drain Voltage Time (sec) Transient Thermal Response Curve 1 Duty Cycle=0.5 Normalized Effective Transient Thermal Impedance D=0.2 D=0.1 0 .1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=62.5°C/W 3. TJM-TA=PDMZthJA 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 5 www.anpec.com.tw APM3011N Package Informaion TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 APM3011N Packaging Information Cont. TO-263 ( Reference JEDEC Registration TO-263) E L2 E1 TERMINAL 4 D L L3 D1 A c2 Φ1 L4 R L1 DETAIL "A"ROTED c Millimeters Dim A b b2 c c2 D E L L1 L2 L3 Min. 4.06 0.51 1.14 1.14 8.64 9.65 14.60 2.24 1.02 1.20 Max. 4.83 1.016 1.651 1.40 9.65 10.54 15.88 2.84 2.92 1.78 Min. 0.160 0.02 0.045 0.045 0.340 0.380 0.575 0.090 0.040 0.050 Inches Max. 0.190 0.040 0.065 0.055 0.380 0.415 0.625 0.110 0.112 0.070 0.38 TYP. 0.015 TYP. Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 7 www.anpec.com.tw APM3011N Package Information Cont. TO-220 ( Reference JEDEC Registration TO-220) D Q R b E e b1 e1 L1 H1 A F L c J1 Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Millimeters Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Inches Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 8 www.anpec.com.tw APM3011N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection 3 °C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0 °C or 235 +5/-0 °C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. Average ramp-up rate(183 °C to Peak) Preheat temperature 125 ± 25 °C) Temperature maintained above 183 °C Time within 5 °C of actual peak temperature Peak temperature range Ramp-down rate Time 25 °C to peak temperature 60 seconds 215~ 219 °C or 235 +5/-0 °C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm pkg. thickness < 2.5mm and pkg. volume < Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 9 www.anpec.com.tw APM3011N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimension t E Po P P1 D W F Bo Ao D1 T2 Ko J C A B T1 Application TO-252 Application TO-252 Application TO-263 Application TO-263 A 330±3 F 7.5 ± 0.1 A 380±3 F 11.5 ± 0.1 B 100 ± 2 D 1.5± 0.1 B 80 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 1.5+ 0.25 C 13 ± 0. 5 D1 1.5± 0.25 J 2 ± 0.5 Po 4.0 ± 0.1 J 2 ± 0.5 Po 4.0 ± 0.1 T1 16.4 +0.3 -0.2 P1 2.0 ± 0.1 T1 24 ± 4 P1 T2 2.5± 0.5 Ao 6.8 ± 0.1 T2 2± 0.3 Ao W 16 + 0.3 16 - 0.1 Bo 10.4± 0.1 W 24 + 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 P 16 ± 0.1 Ko E 1.75± 0.1 t 0.3±0.05 E 1.75± 0.1 t 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 10 www.anpec.com.tw APM3011N Cover Tape Dimensions Application TO- 252 TO- 263 Carrier Width 16 24 Cover Tape Width 13.3 21.3 Devices Per Reel 2500 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 11 www.anpec.com.tw