APM3023NUC-TUL

APM3023NU N-Channel Enhancement Mode MOSFET Features • 30V/30A, RDS(ON)=15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V Pin Description G D • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) S Top View of TO-252 D Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information APM3023N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM3023N U : APM3023N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM3023NU Absolute Maximum Ratings Symbol Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 30 ±20 150 -55 to 150 20 100 60 30* 20 50 20 2.5 W °C/W V °C °C A Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 60 10 4 2.5 1 50 100 60 7 5 1.6 0.6 75 W °C/W W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Note: * Current limited by bond wire. 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 www.anpec.com.tw APM3023NU Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Static Characteristics Parameter Test Condition APM3023NU Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=15A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 30 1 30 1 1.5 15 22 2 ±100 20 28 V µA V nA mΩ VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSDa RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qrr Trr Qg Qgs Qgd Notes: Diode Forward Voltage b 0.7 1.3 V Ω pF Dynamic Characteristics Gate Resistance 2.5 1040 200 85 11 17 37 20 18 26 54 30 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time ns IF=20A, dI/dt=100A/µs 12.1 22 Gate Charge Characteristicsb Total Gate Charge Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 30 VDS=15V, VGS=10V, IDS=20A 5.8 3.8 40 nC Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM3023NU Typical Characteristics Power Dissipation 60 Drain Current 35 30 25 20 15 10 5 50 Ptot - Power (W) 40 30 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 o ID - Drain Current (A) 0 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 o Tj - Junction Temperature (°C) Tj - Junction Temperature Safe Operation Area Normalized Transient Thermal Resistance 300 100 2 1 Thermal Transient Impedance ID - Drain Current (A) it im )L on s( Rd Duty = 0.5 0.2 0.1 1ms 10ms 10 0.1 0.05 0.02 0.01 Single Pulse 100ms 1s DC 1 0.01 TC=25 C 0.1 0.1 o 1 10 100 1E-3 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 4 www.anpec.com.tw APM3023NU Typical Characteristics (Cont.) Output Characteristics 30 27 24 VGS=4,5,6,7,8,9,10V Drain-Source On Resistance 40 35 RDS(ON) - On - Resistance (mΩ) 30 25 20 15 10 5 0 VGS=10V VGS=4.5V ID - Drain Current (A) 21 18 15 12 9 6 3 2V 3V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 3 6 9 12 15 18 21 24 27 30 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 40 35 30 1.4 Gate Threshold Voltage IDS =250µA Normalized Threshold Voltage 1.2 ID - Drain Current (A) 25 20 15 10 5 Tj=25 C o o 1.0 0.8 Tj=125 C Tj=-55 C o 0.6 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.2 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 5 www.anpec.com.tw APM3023NU Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 1.8 VGS =10V IDS = 20A Source-Drain Diode Forward 30 Normalized On Resistance 1.6 10 IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 RON@Tj=25 C: 15mΩ 75 100 125 150 o Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 1500 Frequency=1MHz 1250 Gate Charge 10 VDS=15V ID = 10A VGS - Gate-source Voltage (V) 30 8 C - Capacitance (pF) Ciss 1000 6 750 4 500 250 Crss 0 Coss 2 0 5 10 15 20 25 0 0 4 8 12 16 20 24 28 32 VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 6 www.anpec.com.tw APM3023NU Package Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 D1 C A1 E1 Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032 7 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080 www.anpec.com.tw Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 APM3023NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 8 www.anpec.com.tw APM3023NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s P ackage Thickness Volume mm 3 Volume mm 3 < 350 ≥ 350 < 2.5 mm °C 240 +0/-5 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures P ackage Thickness Volume mm 3 Volume mm 3 Volume mm 3 < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item S OLDERABILITY H OLT P CT T ST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 Description 245° C, 5 SEC 1000 Hrs Bias @125° C 168 Hrs, 100% RH, 121 °C -65 °C~150 ° C, 200 Cycles Carrier Tape t P P1 D Po E F W Bo Ao Ko D1 Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 9 www.anpec.com.tw APM3023NU Carrier Tape(Cont.) T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 10 www.anpec.com.tw