APM3054NVC-TR

APM3054N N-Channel Enhancement Mode MOSFET Features • • • • 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package Pin Description 1 2 3 1 2 3 G D S G D S Top View of TO-252 Top View of SOT-223 Applications • • 1 2 3 Switching Regulators Switching Converters G D S Top View of SOT-89 Ordering and Marking Information A P M 3 054 N H a n d lin g C o d e Tem p. R ange Package C ode Package C ode D : S O T -8 9 U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TR : Tape & R eel V : S O T -2 2 3 AP M 3054N U : AP M 3054N XXXXX XXXXX - D a te C o d e A P M 3 0 5 4 N D /V : AP M 3054N XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM IS Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 15 30 8 Unit V A A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Diode Continuous Forward Current ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw APM3054N Absolute Maximum Ratings (Cont.) Symbol ISM Parameter Diode Maximum Pulse Current TO-252 T A =25°C PD Maximum Power Dissipation T A =100°C TJ T STG Maximum Junction Temperature Storage Temperature Range SOT-223 TO-252 SOT-223 (TA = 25°C unless otherwise noted) Rating 32 62.5 W 3 25 W 1.2 150 -55 to 150 °C °C Unit A Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss C rss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Parameter (TA = 25°C unless otherwise noted) APM3054N Typ. Max. Test Condition Min. Unit VGS=0V, IDS=250µ A VDS=24V, VGS =0V VDS=VGS, IDS=250µ A VGS=±20V, V DS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=6A ISD=8A, VGS=0V 30 1 1 3 ±100 48 75 0.6 54 90 1.3 V µA V nA mΩ V 9 VDS=15V, VGS =5V, IDS=10A 5.4 2.4 11 VDD=15V,ID=2A, VGS=10V, RG=6Ω 17 37 20 VGS=0V VDS=25V Frequency=1.0MHz 400 75 45 www.anpec.com.tw nC ns pF Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 2 APM3054N Typical Characteristics Output Characteristics 20 VGS=6,7,8,9,10V Transfer Characteristics 25 TJ=-55°C ID-Drain Current (A) 15 V GS =5V ID-Drain Current (A) 20 TJ=25°C TJ=125°C 15 10 10 V GS =4V 5 V GS=3V 5 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Temperature 1.2 0.12 IDS=250uA On-Resistance vs. Drain Current VGS(th)-Threshold Voltage (V) (Normalzed) 1.1 1.0 0.9 0.8 0.7 0.6 -50 RDS(on)-On-Resistance (Ω) 0.10 VGS=4.5V 0.08 0.06 VGS=10V 0.04 0.02 0.00 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 3 www.anpec.com.tw APM3054N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.35 ID=6A On-Resistance vs. Junction Temperature 0.10 VGS=10V RDS(on)-On-Resistance (Ω) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 RDS(on)-On-Resistance (Ω) (Normalized) 0.09 ID=12A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 2 3 4 5 6 7 8 9 10 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.10 Gate Charge 10 V DS =15V IDS=10A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -50 -25 0 25 50 75 100 125 150 VGS-Gate-Source Voltage (V) RDS(on)-On-Resistance (Ω) V GS=10V 0.09 IDS=12A 8 6 4 2 0 2.5 5.0 7.5 10.0 12.5 15.0 TJ - Junction Temperature (°C) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 4 www.anpec.com.tw APM3054N Typical Characteristics Capacitance 750 625 Source-Drain Diode Forward Voltage 30 IS-Source Current (A) Capacitance (pF) 500 Ciss 375 250 125 0 10 Coss Crss 0 5 10 15 20 25 30 TJ=150°C TJ=25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS - Drain-to-Source Voltage (V) VSD -Source-to-Drain Voltage (V) Single Pulse Power TO-252 Single Pulse Power SOT-223 250 140 120 200 100 Power (W) 150 Power (W) 80 60 40 100 50 20 0 1E-3 0.01 0.1 1 10 100 1000 0 0.01 0.1 1 10 100 1000 Time (sec) Time (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 5 www.anpec.com.tw APM3054N Typical Characteristics Normalized Thermal Transient Impedence, Junction to Ambient TO-252 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 SOT-223 0.1 D= 0.1 D= 0.05 D= 0.02 0.01 D= 0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=42°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 6 www.anpec.com.tw APM3054N Package Information SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62) D D1 a E H 1 2 3 L B1 B e e1 C A a D im A B B1 C D D1 e e1 E H L α M illim eters M in. 1.40 0.40 0.35 0.35 4.40 1.35 1.50 B SC 3.00 B SC 2.29 3.75 0.80 2.60 4.25 1.20 10 ° 0.090 0.148 0.031 M ax. 1.60 0.56 0.48 0.44 4.60 1.83 M in. 0.055 0.016 0.014 0.014 0.173 0.053 Inches M ax. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 B SC 0.102 0.167 0.047 10 ° Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 7 www.anpec.com.tw APM3054N Package Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 8 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM3054N Package Information SOT-223( Reference JEDEC Registration SOT-223) D B1 A c a H E L K e e1 b A1 B Dim A A1 B B1 c D E e e1 H L K α β Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° Min. 0.06 0.02 0.11 0.01 0.25 0.13 Inches Max. 0.07 0.03 0.12 0.01 0.26 0.15 0.09 BSC 0.18 BSC 0.29 0.04 0.08 10° 13° 13° Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 9 www.anpec.com.tw APM3054N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 10 APM3054N R e lia b ilit y te s t p r o g r a m Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 °C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 ° C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C -6 5 ° C ~ 1 5 0 ° C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 11 www.anpec.com.tw APM3054N Application A 178 ±1 SOT-89 F 5.5 ± 0.05 Application A 330 ±3 TO-252 F 7.5 ± 0.1 Application A 330±1 SOT-223 F 5.5 ± 0.05 B 70 ± 2 D 1.5± 0.1 B 100 ± 2 D 1.5 +0.1 B 62±1.5 D 1.5+ 0.1 C J T1 14 ± 2 P1 2.0 ± 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T1 12.4 +0.2 P1 T2 1.3 ± 0.3 Ao 4.8 ± 0.1 T2 2.5± 0.5 Ao 6.8 ± 0.1 T2 2± 0.2 Ao 13.5 ± 0.15 3 ± 0.15 D1 1.5± 0.1 C 13 ± 0. 5 D1 1.5± 0.25 C 12.75± 0.15 D1 1.5+ 0.1 Po 4.0 ± 0.1 J 2 ± 0.5 Po 4.0 ± 0.1 J 2 ± 0.6 Po W 12 + 0.3 12 - 0.1 Bo 4.5± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 W 12 ± 0.3 Bo 7.5± 0.1 P 8 ± 0.1 Ko E 1.75± 0.1 t 1.80± 0.1 0.3±0.013 P 8 ± 0.1 Ko 2.5± 0.1 P 8 ± 0.1 Ko 2.1± 0.1 E 1.75± 0.1 t 0.3±0.05 E 1.75± 0.1 t 0.3±0.05 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 Cover Tape Dimensions Application SOT- 89 SOT- 223 TO- 252 Carrier Width 12 12 16 Cover Tape Width 9.3 9.3 13.3 Devices Per Reel 1000 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 12 www.anpec.com.tw