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APM3055L

APM3055L

  • 厂商:

    ANPEC(茂达电子)

  • 封装:

  • 描述:

    APM3055L - N-Channel Enhancement Mode MOSFET - Anpec Electronics Coropration

  • 数据手册
  • 价格&库存
APM3055L 数据手册
APM3055L N-Channel Enhancement Mode MOSFET Features • • • • 30V/12A, RDS(ON)=100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages Pin Description 1 1 2 3 2 3 G D S Applications • • Switching Regulators Switching Converters G D S Top View of TO-252 Top View of SOT-223 Ordering and Marking Information A P M 3 055 L H a n d lin g C o d e Tem p. R ange Package C ode AP M 3055L XXXXX Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel A P M 3 0 5 5 L U /V : X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 15 30 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 1 www.anpec.com.tw APM3055L Absolute Maximum Ratings Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG Maximum Junction Temperature Storage Temperature Range TO-252 SOT-223 TO-252 SOT-223 (TA = 25°C unless otherwise noted) Rating 50 3 20 1.2 150 -55 to 150 °C °C W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VSD Dynamic Qg Q gs Q gd tON td(ON) tr td(OFF) tf tOFF Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Time Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-off Time Diode Forward Voltage (TA = 25°C unless otherwise noted) APM3055L Min. Typ. Max. 30 1 1 3 ±100 75 100 0.6 100 200 1.3 mΩ V Test Condition VGS =0V, ID=250µ A VDS =24V, VGS=0V VDS =VGS, ID=250µA VGS =±20V, VDS =0V VGS =10V, ID=12A VGS =4.5V, ID =6A IS=6A, VGS =0V Unit V µA V nA VDS =15V, VGS=10V, ID=2A 8.5 1.1 1.8 12 nC VDD=15V, ID=2A, VGS =10V, RG=6Ω 11 17 37 20 40 ns 60 Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 2 www.anpec.com.tw APM3055L Typical Characteristics Output Characteristics 25 VGS = 10, 9, 8, 7, 6V 20 25 -55 C o Transfer Characteristics ID- Drina current (A) IDS- Drain Current(A) VGS = 5V 20 +25 C o o 15 VGS = 4V 15 +125 C 10 10 5 VGS = 3V 5 0 0 1 2 3 4 0 0 1 2 3 4 5 6 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Threshold Voltage v.s.TJ 1.6 Normalized V GS(th) v.s. TJ 1.2 1.1 VGS(th)- Normalized 1.5 IDS =250µ A VGS(th) (V) 1.4 1.3 1.2 1.1 1.0 -50 -25 0 25 50 75 100 o 1.0 0.9 0.8 0.7 IDS =250 µ A 125 150 -50 -25 0 25 50 75 100 o 125 150 Tj - Junction Temperature( C) Tj - Junction Temperature( C) On-Resistance v.s. Gate to Source Voltage 170 On-Resistance v.s. Junction Temperature 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 VGS =10V IDS =12A RDS(ON)- On-Resistance (m Ω ) 150 140 130 120 110 100 90 80 70 3 4 5 6 7 8 9 ID=10A RDS(ON)- On-Resistance (Ω ) (Normalized) 160 -50 -25 0 25 50 75 o 100 125 150 VGS- Gate Voltage (V) TJ-Junction Temperature( C) Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 3 www.anpec.com.tw APM3055L Typical Characteristics (Cont.) Gate Charge 10 500 Capacitance VGS - Gate to Source Voltage (V) 6 VDS=15V IDS = 2A Capacitance (pF) 8 400 300 Ciss 200 4 2 100 Coss Crss 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 0 QG-Gate Charge(nC) VDS- Drain-to-Source Voltage(V) Source-Drain Diode Forward Voltage 50 Single Pulse Power Capability IS- Source Current(A) 10 Peak Power (W) 1.6 2.0 2.4 TJ=150 C o o 40 30 TJ=25 C 1 20 10 0.1 0.4 0.8 1.2 0 1E-5 1E-4 1E-3 0.01 0.1 1 10 VSD- Source to Drain Voltage Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 2DM D=0.2 D=0.1 J J 0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle , D=t1/t2 1. Duty Cycle, D= t1/t2 o 2. Per Unit Base=RthJA=50 °C/W Base=RthJA=50 C/W 2.Per 3. TJM-TA=PDMZthJA 3.TJM A=PDMZthJA 4. Surface Mounted 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration(sec) Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 4 www.anpec.com.tw APM3055L Package Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 5 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 APM3055L Package Information SOT-223( Reference JEDEC Registration SOT-223) D B1 A c a H E L K e e1 b A1 B Dim A A1 B B1 c D E e e1 H L K α β Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° Min. 0.06 0.02 0.11 0.01 0.25 0.13 Inches Max. 0.07 0.03 0.12 0.01 0.26 0.15 0.09 BSC 0.18 BSC 0.29 0.04 0.08 10° 13° 13° Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 6 www.anpec.com.tw APM3055L Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 7 APM3055L R e lia b ilit y te s t p r o g r a m Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 °C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 ° C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C -6 5 ° C ~ 1 5 0 ° C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 B 62±1.5 D 1.5+ 0.1 C 13 ± 0. 5 D1 1.5± 0.25 C 12.75± 0.15 D1 1.5+ 0.1 J 2 ± 0.5 Po 4.0 ± 0.1 J 2 ± 0.6 Po T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T1 12.4 +0.2 P1 T2 2.5± 0.5 Ao 6.8 ± 0.1 T2 2± 0.2 Ao W 16+ 0.3 - 0.1 Bo 10.4± 0.1 W 12 ± 0.3 Bo 7.5± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 P 8 ± 0.1 Ko 2.1± 0.1 E 1.75± 0.1 t 0.3±0.05 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 Application A 330±1 SOT-223 F 5.5 ± 0.05 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 8 www.anpec.com.tw APM3055L Cover Tape Dimensions Application SOT- 223 TO- 252 Carrier Width 12 16 Cover Tape Width 9.3 13.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 9 www.anpec.com.tw
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