APM4220KC-TUL

APM4220K N-Channel Enhancement Mode MOSFET Features • • • • • • 25V/12A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) Pin Description D D D D S S S G Top View of SOP − 8 ( 5,6,7,8 ) DD DD Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SS S (1, 2, 3) (4) G N-Channel MOSFET Ordering and Marking Information APM 4220 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code APM 4220 K : APM 4220 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM4220K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Rating 25 ±20 VGS=10V 12 50 3 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 W °C/W A °C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4220K Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=15V 25 50 mJ Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS VGS(th) IGSS RDS(ON) VSD a a V 1 µA V nA mΩ V Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=25°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=8A ISD=16A, VGS=0V 7.5 10 0.8 1.3 1.8 30 2.5 ±100 9 Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b 12 1.3 Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd 39.6 VDS=10V, VGS=4.5V, IDS=12A 4.8 8.4 2 53 nC Gate-Source Charge Gate-Drain Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 www.anpec.com.tw APM4220K Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM4220K Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 2.4 1785 490 300 10 19 13 95 46 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 7 69 32 ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM4220K Typical Characteristics Power Dissipation 2.5 15 Drain Current 2.0 12 Ptot - Power (W) 1.5 ID - Drain Current (A) 9 1.0 6 0.5 o 3 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance im it ID - Drain Current (A) Rd 10 s( on )L 300µs 1ms Duty = 0.5 0.2 0.1 0.05 0.02 0.01 10ms 0.1 1 100ms 1s 0.01 Single Pulse 0.1 DC 0.01 0.01 TA=25 C 0.1 1 10 100 O 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 4 www.anpec.com.tw APM4220K Typical Characteristics (Cont.) Output Characteristics 50 VGS=4,5,6,7,8,9,10V 40 20 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 3V 16 ID - Drain Current (A) 30 12 VGS=4.5V 20 2.5V 10 8 VGS=10V 4 0 0 2 4 6 8 10 0 0 10 20 30 40 50 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 50 1.6 1.4 Gate Threshold Voltage IDS =250µA 40 Normalized Threshold Voltage ID - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 30 Tj=125 C 20 o 10 Tj=25 C o Tj=-55 C o 0 0 1 2 3 4 5 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 5 www.anpec.com.tw APM4220K Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 12A 10 Tj=150 C Tj=25 C o o Source-Drain Diode Forward 50 Normalized On Resistance 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 7.5mΩ 0 25 50 75 100 125 150 o IS - Source Current (A) 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 3000 Frequency=1MHz 2500 10 VDS=10V 9 I = 12A D Gate Charge VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 C - Capacitance (pF) 2000 Ciss 1500 1000 Coss Crss 0 500 0 5 10 15 20 25 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 6 www.anpec.com.tw APM4220K Avalanche Test Circuit and Waveforms V DS L DUT IA S RG V DD tp V D SX(SU S) V DS V DD tp IL 0.0 1 Ω tAV EA S Switching Time Test Circuit and Waveforms V DS RD DUT V RG V DD 10% tp V DS 90% GS V GS t d (on) t r t d (off) t f Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 7 www.anpec.com.tw APM4220K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 8 www.anpec.com.tw APM4220K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw APM4220K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 10 www.anpec.com.tw APM4220K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 F D D1 Po P1 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 11 www.anpec.com.tw