Rev 3: Nov 2004
AO3414, AO3414L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3414 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. AO3414L ( Green Product ) is offered in
a lead-free package.
VDS (V) = 20V
ID = 4.2 A
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±8
V
15
1.4
W
0.9
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
3.2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
4.2
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
AO3414, AO3414L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
RDS(ON)
gFS
VSD
IS
On state drain current
Static Drain-Source On-Resistance
Conditions
Min
ID=250µA, VGS=0V
VDS=16V, VGS=0V
20
Typ
Max
Units
V
1
TJ=55°C
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4.2A
0.4
15
TJ=125°C
VGS=2.5V, ID=3.7A
VGS=1.8V, ID=3.2A
VDS=5V, ID=4.2A
Forward Transconductance
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
0.6
5
100
1
41
58
52
50
70
63
mΩ
67
11
87
mΩ
0.76
1
2
V
A
nA
V
A
mΩ
S
436
66
pF
pF
pF
Ω
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
44
3
VGS=4.5V, VDS=10V, ID=4.2A
6.2
1.6
nC
nC
0.5
5.5
nC
ns
6.3
40
12.7
ns
ns
ns
12.3
3.5
ns
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
trr
Qrr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=5V, VDS=10V, RL=2.7Ω,
RGEN=6Ω
IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3414, AO3414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
10
8V
VDS=5V
4.5V
8
2V
3V
2.5V
8
ID(A)
ID (A)
12
6
4
4
VGS=1.5V
125°C
2
25°C
0
0
0
1
2
3
4
5
0
0.5
100
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
2
2.5
1.8
VGS=1.8V
80
VGS=2.5V
60
40
VGS=4.5V
20
VGS=2.5V
1.6
VGS=1.8V
1.4
ID=4.2A
VGS=4.5V
1.2
1
0.8
0
4
8
12
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
1E+01
90
1E+00
ID=4.2A
80
125°C
1E-01
70
IS (A)
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
60
50
1E-02
25°C
1E-03
25°C
40
1E-04
30
1E-05
20
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO3414, AO3414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VGS (Volts)
Capacitance (pF)
VDS=10V
ID=4.2A
4
3
2
1
600
Ciss
400
Coss
200
0
0
0
2
4
6
0
8
100.0
10
20
TJ(Max)=150°C
TA=25°C
15
20
TJ(Max)=150°C
TA=25°C
100µs
15
RDS(ON)
limited
10µs
1ms
Power (W)
10.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
Crss
0.1s
10ms
1.0
10
5
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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