AO3438_001

AO3438 20V N-Channel MOSFET General Description Product Summary The AO3438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. A VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±8 V ID 2.5 IDM 16 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 0.9 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 3 Pulsed Drain Current B A Maximum 20 RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W AO3438 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Typ 20 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 16 TJ=55°C 5 100 VGS=4.5V, ID=3A 0.7 62 85 VGS=2.5V, ID=2.8A 58 70 mΩ 85 mΩ VGS=1.8V, ID=2.5A 68 Forward Transconductance VDS=5V, ID=3A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 260 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=4.5V, VDS=10V, ID=3A 1 V 2 A 320 pF 48 pF pF 3 4.5 Ω 2.9 3.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=3A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 3.8 VGS=5V, VDS=10V, RL=3.3Ω, RGEN=6Ω mΩ S 27 Body Diode Reverse Recovery Time V 51 gFS Reverse Transfer Capacitance nA 68 TJ=125°C Static Drain-Source On-Resistance Output Capacitance 1 µA A RDS(ON) Coss Units V VDS=20V, VGS=0V IDSS Crss Max 0.4 nC 0.6 nC 2.5 ns 3.2 ns 21 ns 3 ns 19 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using