AO4488L_101

AO4488 30V N-Channel MOSFET General Description Product Summary The AO4488 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D Bottom View G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 30 Units V Gate-Source Voltage ±20 V VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C ID B Steady State 20 15 17 12 IDM 80 Avalanche Current G IAR 50 Repetitive avalanche energy L=0.3mH G TA=25°C Power Dissipation A TA=70°C EAR 375 Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C PD Symbol t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. RθJA RθJL mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 31 59 16 A Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4488 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID = 250µA, VGS = 0V Min Typ 30 35.5 VDS = 30V, VGS = 0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS = 0V, VGS = ±16V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 1.0 On state drain current VGS = 10V, VDS = 5V 80 TJ = 55°C Static Drain-Source On-Resistance TJ=125°C IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Qg (4.5V) Total Gate Charge Gate Source Charge 0.69 5450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qgs µA VGS=10V, VDS=15V, ID=20A V A 72 Diode Forward Voltage Gate resistance 4.6 6.4 VSD Rg 3.8 6.5 IS Output Capacitance 2.5 5.2 VDS = 5V, ID = 20A Reverse Transfer Capacitance 1.7 5.3 Forward Transconductance Crss 5 VGS = 4.5V, ID = 18A gFS Coss V ±10 VGS = 10V, ID = 20A RDS(ON) Units 1 IDSS ID(ON) Max mΩ S 1 V 3 A 6800 pF 760 pF 540 pF 1 1.5 Ω 84 112 nC 42 56 nC 12 nC Qgd Gate Drain Charge 21 nC tD(on) Turn-On DelayTime 13 ns 9.8 ns 49 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 42 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 31 Turn-Off Fall Time 16 ns 56 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 0 curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev6: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 80 10V 70 4V 60 3.5V 125°C 20 ID(A) 50 ID (A) VDS= 5V 25 4.5V 40 30 15 25°C 10 20 5 10 -40°C VGS= 3V 0 0 0 1 2 3 4 5 0 1 6 Normalized On-Resistance RDS(ON) (mΩ ) 3 4 1.6 5.5 VGS= 4.5V 5 4.5 VGS= 10V 4 3.5 3 VGS= 10V ID= 20A 1.4 1.2 VGS= 4.5V ID= 18A 1.0 0.8 0.6 0 4 16 20 IF12 =-6.5A, dI/dt=100A/µs 8 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1E+01 14 ID= 20A 1E+00 12 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1E-01 10 IS (A) 125°C 1E-02 8 25°C 125°CAND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED 1E-03 6 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF4SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 25°C TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 -40°C 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. -40°C 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AO4488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10 VDS= 15V ID= 20A 8000 Capacitance (pF) VGS (Volts) 8 6 4 4000 Coss 2 2000 0 0 Crss 0 10 20 30 40 50 60 70 80 90 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 1000 1ms 1 10ms 100ms s10s TJ(Max)=150°C TA=25°C 0.01 0.01 0.1 Power (W) 100µs 10 0.1 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 10 1 100 10 DC 1 1E-04 0.001 0.01 I =-6.5A, dI/dt=100A/µs 10 100 F 1 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=59°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 5 VDS (Volts) Figure 8: Capacitance Characteristics 100 ID (Amps) Ciss 6000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4488 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com