AO4492L

AO4492L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4492L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 13A RDS(ON) < 9.5mΩ RDS(ON) < 14mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25°C TC=70°C C C G S Maximum 30 ±20 13 11 100 20 20 3.1 2 -55 to 150 Units V V A A mJ W °C TC=25°C TC=70°C ID IDM IAR EAR PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4492L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=13A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=13A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 600 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 200 40 0.4 9 VGS=10V, VDS=15V, ID=13A 4 1.6 1.5 VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω IF=13A, dI/dt=500A/µs 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 ±100 1.2 100 7.6 TJ=125°C 11 11 43 0.74 1 3 750 245 70 0.8 11.5 5 2 2.5 5 3 18 3 9 18 11 23 13 28 980 365 100 1.4 14 6 2.4 3.5 9.5 13 14 1.7 2.2 µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using