AO4708

SRFET TM AO4708 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4708 is Pb-free (meets ROHS & Sony 259 specifications). AO4708L is a Green Product ordering option. AO4708L and AO4708 are electrically identical. D S S S G D D D D Features VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 8.7mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested G S SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Avalanche Current B B Maximum 30 ±12 15 12 80 25 94 3.1 2.0 -55 to 150 Units V V A A A mJ W °C TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25°C Repetitive avalanche energy L=0.3mH Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4708 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=14A Forward Transconductance VDS=5V, ID=15A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125°C 1.4 80 7.2 10.5 8.6 85 0.39 0.5 5.5 2800 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 390 145 0.8 42 VGS=10V, VDS=15V, ID=15A 19 7 6 7 VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω IF=15A, dI/dt=300A/µs 7 31 5 13 12 15 1.5 52 3360 8.7 13.1 10.5 1.8 Min 30 0.1 20 0.1 2.4 Typ Max Units V mA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/µs A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using