AO4714

SRFET AO4714 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4714 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain F Current Pulsed Drain Current B TA=25°C Power Dissipation F Avalanche Current B Repetitive avalanche energy L=0.3mH B Maximum 30 ±20 20 16 100 3.0 2.0 30 135 -55 to 150 Units V V A A W A mJ °C Max 41 75 24 Units °C/W °C/W °C/W TA=25°C TA=70°C IDSM IDM PDSM IAR EAR TA=70°C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL Typ 31 59 16 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4714 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125°C 1.2 100 3.9 5.9 5.4 90 0.36 0.5 6 3760 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 682 314 0.75 62 VGS=10V, VDS=15V, ID=20A 29 12 12 9.5 VGS=10V, V DS=15V, R L=0.75 Ω, RGEN=3Ω IF=20A, dI/dt=300A/ µs IF=20A, dI/dt=300A/ µs 8.5 34 9 18 22 27 1.5 74 35 nC nC nC ns ns ns ns ns nC 4512 4.7 7.3 6.7 1.5 Min 30 0.1 20 0.1 2.2 Typ Max Units V mA µA V A mΩ mΩ S V A pF pF pF Ω DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. θ D. The static characteristics in Figures 1 to 6 are obtained using