AO4803L

AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -5A RDS(ON) (at VGS=-10V) < 52mΩ RDS(ON) (at VGS = -4.5V) < 87mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D Bottom View D Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V -5 ID TA=70°C Maximum -30 -4.2 A Pulsed Drain Current C IDM -30 Avalanche Current C IAS, IAR 17 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 14 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: Nov 2011 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W Page 1 of 6 AO4803 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 nA -2.4 V 32 52 48 70 VGS=-4.5V, ID=-4A 51 87 13 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance A -0.7 DYNAMIC PARAMETERS Input Capacitance Ciss Rg µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.9 VGS=-10V, ID=-5A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz S V -2.5 A 520 pF 100 pF pF Ω 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, ID=-5A 3.5 mΩ -1 65 VGS=0V, VDS=0V, f=1MHz mΩ 1.6 nC 2.2 nC 7.5 ns VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 5.5 ns 19 ns 7 ns IF=-5A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 5.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using