AO4862

AO4862 30V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 4.5A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 50mΩ RDS(ON) (at VGS=4.5V) < 68mΩ 100% UIS Tested 100% Rg Tested • System switch, inverter SOIC-8 D1 Top View D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AO4862 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: May 2014 Steady-State Steady-State A 18 IAS 8 A EAS 3 mJ 36 V 1.7 W 1.1 TJ, TSTG Symbol t ≤ 10s V 3.5 PD TA=70°C ±20 IDM VSPIKE TA=25°C Units V 4.5 ID TA=70°C C Maximum 30 RθJA RθJL -55 to 150 Typ 52 80 35 www.aosmd.com °C Max 70 100 45 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.5 ±100 nA 2 2.5 V 39 50 63 78 68 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3A 50 gFS Forward Transconductance VDS=5V, ID=4.5A 10 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.79 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=4.5A Coss Units 30 VDS=30V, VGS=0V IDSS Max mΩ S 1 V 2 A 200 pF 35 pF 25 pF 2 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 10 nC Qg(4.5V) Total Gate Charge 2 6 nC VGS=10V, VDS=15V, ID=4.5A 1 mΩ Ω Qgs Gate Source Charge 0.55 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 15.5 ns IF=4.5A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 2.5 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=3.3Ω, RGEN=3Ω 1.5 ns 18.5 ns A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: May 2014 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: May 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5