AO5600E

AO5600E Complementary Enhancement Mode Field Effect Transistor General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen Free ESD PROTECTED! Features n-channel VDS (V) = 20V, RDS(ON)< 0.65Ω RDS(ON)< 0.75Ω RDS(ON)< 0.95Ω p-channel VDS (V) = -20V, RDS(ON)< 0.8Ω RDS(ON)< 1.0Ω RDS(ON)< 1.3Ω ID = 0.6A (VGS=4.5V) (VGS= 4.5V) (VGS= 2.5V) (VGS= 1.8V) ID = -0.5A (VGS=-4.5V) (VGS= -4.5V) (VGS= -2.5V) (VGS= -1.8V) D1 1 D2 S1 G1 D2 SC-89-6 D1 G2 S2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage 20 VDS Gate-Source Voltage Continuous Drain B,H Current Pulsed Drain Current Power Dissipation B Max p-channel -20 ±8 -0.5 -0.38 -1 0.38 0.24 Units V V A VGS TC=25°C TC=100°C TC=25°C TC=100°C ID IDM PD TJ, TSTG 0.6 0.4 3 0.38 0.24 W °C Junction and Storage Temperature Range -55 to 150 Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 275 360 300 275 360 300 Max 330 450 350 330 450 350 Units °C/W °C/W °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5600E N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=0.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=0.5A VGS=1.8V, ID=0.3A gFS VSD IS Forward Transconductance VDS=5V, ID=0.5A Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current 0.45 3 0.54 0.81 0.63 0.73 1.5 0.65 1 0.4 35 VGS=0V, VDS=10V, f=1MHz 8 6 0.63 VGS=4.5V, VDS=10V, ID=0.5A 0.08 0.16 4.5 VGS=5V, VDS=10V, RL=50Ω, RGEN=3Ω IF=0.5A, dI/dt=100A/µs 3.3 70 35 8 2 10 1 45 0.65 1 0.75 0.95 0.6 Min 20 1 5 ±1 ±100 1 Typ Max Units V µΑ µA µA V A Ω Ω Ω S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs A: The value of R s measured with the device in a still on 1in 2 FR-4 board with 25°C. The power dissipation PDSM and current rating I DSM A: The value of R θJA iis measured with the device mountedair environment with T A =2oz. Copper, in a still air environment with T A =25°C. The are θJA based on TJ(MAX)=150°C, using the steady the junction-to-ambient design. The current value in any given application depends onstateuser's specific board thermal resistance. rating is based on the t ≤ 10s thermal resistance B. The rating. power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for pulse width additional heatsinking is used. B: Repetitive rating,cases where limited by junction temperature. C: Repetitive rating, pulse width limited by junction temperature T lead =175°C. C. The R θJA is the sum of the thermal impedence from junction to J(MAX)R θJL and lead to ambient. D. The RθJA characteristics in Figures 1 to 6,12,14 are obtained case R θJC µs case to ambient. D. The staticis the sum of the thermal impedence from junction tousing