AOB12T60PL

AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max < 0.52Ω Applications Qg,typ 33nC Eoss @ 400V 4.4µJ 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Top View D TO-263 D2PAK TO-220F D G D G S S G S AOB12T60P AOTF12T60P Orderable Part Number Package Type Form Minimum Order Quantity AOB12T60PL AOTF12T60P AOTF12T60PL TO-263 Green TO-220F Pb Free TO-220F Green Tape & Reel Tube Tube 800 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C AOB12T60P TC=100°C C L=1mH ID AOTF12T60P AOTF12T60PL 600 ±30 12 9 V 12* 12* 9* 9* IDM 48 Units V A IAR 12 A Repetitive avalanche energy C EAR 72 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 750 50 15 50 0.4 -55 to 150 mJ Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt PD TJ, TSTG TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0: May 2014 250 2 V/ns 35 0.3 300 AOB12T60P W W/°C °C °C AOTF12T60P AOTF12T60PL Units 65 65 65 °C/W 0.5 0.5 -2.5 -3.6 °C/W °C/W www.aosmd.com Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V 0.58 VDS=600V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 nA 5 V 0.44 0.52 Ω 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current C 48 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge 11 0.73 S 2028 pF 71 pF 52 pF 94 pF VGS=0V, VDS=100V, f=1MHz 13 pF f=1MHz 2.2 Ω VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4.1 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=480V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 33 VGS=10V, VDS=480V, ID=12A 50 nC 13 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 52 ns tr Turn-On Rise Time 72 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=12A, RG=25Ω 66 ns tf trr 42 ns Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V 483 Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V ns µC Turn-Off Fall Time 7 A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using