AOI538

AOD538/AOI538 30V N-Channel αMOS™ General Description Product Summary • Trench Power AlphaMOS (αMOS™ LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS Application ID (at VGS=10V) 30V 70A RDS(ON) (at VGS=10V) < 3.1mΩ RDS(ON) (at VGS=4.5V) < 4.8mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial TO252 DPAK TopView TO-251A IPAK Bottom View Top View D Bottom View D D G D S D G G S G D S S D S G Orderable Part Number Package Type Form Minimum Order Quantity AOD538 AOI538 TO-252 TO-251A Tape & Reel Tube 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2.0: May 2018 36 A EAS 65 mJ 36 V 93 Steady-State Steady-State W 46 6.2 W 4 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 34 PD TC=100°C A 27 VSPIKE TC=25°C V 54 IDSM TA=70°C ±20 280 IDM TA=25°C Continuous Drain Current Units V 70 ID TC=100°C Maximum 30 RθJA RθJC -55 to 175 Typ 15 40 1.3 www.aosmd.com °C Max 20 50 1.6 Units °C/W °C/W °C/W Page 1 of 6