AOK30B60D

AOK30B60D 600V, 30A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) 600V 30A VCE(sat) (TC=25°C) 1.6V Top View C TO-247 G C AOK30B60D E E G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE AOK30B60D 600 Units V ±20 V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 128 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 128 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax 60 30 30 IF 15 A A I FM 128 A Short circuit withstanding time VGE = 15V, VCE ≤ t SC 400V, Delay between short circuits ≥ 1.0s, TC=25°C 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.2.0: Nov 2013 PD T J , T STG TL Symbol R θ JA R θ JC R θ JC www.aosmd.com 278 111 W -55 to 150 °C 300 °C AOK30B60D 40 0.45 Units °C/W °C/W 0.95 °C/W Page 1 of 9 AOK30B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=30A Collector-Emitter Saturation Voltage VGE=0V, IC=30A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Max Units V 600 - - TJ=25°C - 1.6 2.1 TJ=125°C - 1.82 - TJ=150°C - 1.88 - TJ=25°C - 1.34 1.85 TJ=125°C - 1.31 - TJ=150°C - 1.3 - - 5.7 - TJ=25°C - - 10 TJ=125°C - - 600 TJ=150°C - - 3000 VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=30A - 17 - S - 1893 - pF - 240 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 7 - pF Qg Total Gate Charge - 47 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=30A - 17.8 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=25Ω I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) - 14.2 - nC - 128 - A - 1.36 - Ω t D(on) Turn-On DelayTime - 26 - ns tr Turn-On Rise Time - 40 - ns t D(off) Turn-Off Delay Time - 71 - ns tf Turn-Off Fall Time - 10 - ns mJ Q gc TJ=25°C VGE=15V, VCE=400V, IC=30A, RG=10Ω, Parasitic Ιnductance=150nH E on Turn-On Energy - 1.18 - E off Turn-Off Energy - 0.2 - mJ E total t rr Total Switching Energy - 1.38 - mJ Diode Reverse Recovery Time - 137 - Q rr Diode Reverse Recovery Charge - 0.8 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) - 9.5 - A t D(on) Turn-On DelayTime - 24 - ns tr Turn-On Rise Time - 41 - ns t D(off) Turn-Off Delay Time - 89 - ns tf Turn-Off Fall Time - 12 - ns E on Turn-On Energy - 1.48 - mJ E off Turn-Off Energy - 0.43 - mJ E total t rr Total Switching Energy - 1.9 - mJ Diode Reverse Recovery Time - 208 - Q rr Diode Reverse Recovery Charge - 1.68 - ns µC I rm Diode Peak Reverse Recovery Current - 14.4 - A TJ=25°C IF=30A,dI/dt=200A/µs,VCE=400V I rm TJ=150°C VGE=15V, VCE=400V, IC=30A, RG=10Ω, Parasitic Inductance=150nH TJ=150°C IF=30A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: Nov 2013 www.aosmd.com Page 2 of 9 AOK30B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 200 20V 17V 20V 150 150 17V 100 IC (A) IC (A) 15V 13V VGE= 7V 13V 11V 11V 50 15V 100 50 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 100 100 VCE=20V -40°C 80 80 60 60 IF (A) IC (A) 9V VGE=7V 9V 40 40 150°C 20 150°C 20 25°C -40°C 25°C 0 0 3 6 9 12 15 0.5 VGE(V) Fig 3: Transfer Characteristic 1.0 1.5 2.0 2.5 VF (V) Fig 4: Diode Characteristic 4 40 200 30 150 20 100 10 50 Time (µ µS) VCE(sat) (V) IC=30A 2 IC=20A 1 0 0 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: Nov 2013 www.aosmd.com Current(A) IC=60A 3 0 5 8 11 14 17 20 VGE (V) Fig 6: VGE vs. Short Circuit Time (VCE=400V,TC=25°C ) Page 3 of 9 AOK30B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Cies VCE=480V IC=30A 12 9 Capacitance (pF) VGE (V) 1000 6 3 Coes 100 Cres 10 0 1 0 10 20 30 40 50 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 300 250 Power Disspation (W) 200 150 100 50 0 25 50 75 100 125 150 TCASE(°C) Fig 10: Power Disspation as a Function of Case 60 50 Current rating IC(A) 40 30 20 10 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Current De-rating Rev.2.0: Nov 2013 www.aosmd.com Page 4 of 9 AOK30B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 10 Tr 100 10 1 1 0 20 40 60 80 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω Ω) 1000 0 20 40 60 80 100 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=30A) 120 8 Td(off) Tf Td(on) Tr 7 100 VGE(TH)(V) Switching Time (nS) Td(on) 1000 10 6 5 4 3 1 2 0 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=30A,Rg=10Ω Ω) Rev.2.0: Nov 2013 50 200 www.aosmd.com 0 30 60 90 TJ (°C) Figure 15: VGE(TH) vs. Tj 120 150 Page 5 of 9 AOK30B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 4 Eoff Eoff Eon 6 Switching Energy (mJ) SwitchIng Energy (mJ) Eon Etotal 4 2 Etotal 3 2 1 0 0 0 20 40 60 IC (A) Figure 16: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω Ω) 80 0 2.5 20 60 80 100 Rg (Ω Ω) Figure 17: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=30A) 120 3 Eoff Eoff Eon 2 2.5 Eon Switching Energ y (mJ) Etotal Switching Energy (mJ) 40 1.5 1 0.5 Etotal 2 1.5 1 0.5 0 0 0 25 75 100 125 150 TJ (°C) Figure 18: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=30A,Rg=10Ω Ω) Rev.2.0: Nov 2013 50 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 19: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=30A,Rg=10Ω Ω) 500 Page 6 of 9 AOK30B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2 1.E-04 1.6 60A 1.E-05 VSD (V) 1.2 13V 30A 1.E-06 5A VCE=400V 0.8 1.E-07 1.E-08 IF=1A 0.4 0 25 50 75 100 125 150 175 0 Temperature (°C ) Fig 20: Diode Reverse Leakage Current vs. Junction Temperature 2500 150°C 50 75 100 125 300 5 150°C Trr 1000 40 Trr (nS) Irm(A) Qrr (nC) 200 60 Qrr 25°C 100 50 1 S Irm 25°C 25°C 0 2 150°C 20 150°C 4 3 150 25°C 500 175 6 250 80 1500 150 Temperature (°C ) Fig 21: Diode Forward voltage vs. Junction Temperature 100 2000 25 S ICE(S) (A) VCE=600V 0 0 0 20 40 60 80 IF(A) Fig 22: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 3000 0 0 180 20 40 60 80 IS (A) Fig 23: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 250 5 200 4 150°C 2500 150 150°C 1500 90 Trr (nS) 120 Qrr Irm(A) Qrr (nC) 2000 3 150 Trr 2 100 25°C 60 150°C 150°C 500 Irm 30 50 25°C 0 0 100 200 400 500 600 700 800 900 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=30A) Rev.2.0: Nov 2013 25°C 0 300 www.aosmd.com 25°C S 1000 100 200 300 S 1 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 25: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=30A) Page 7 of 9 AOK30B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.95°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: Nov 2013 www.aosmd.com Page 8 of 9 AOK30B60D Rev.2.0: Nov 2013 www.aosmd.com Page 9 of 9