AOK5N100L

AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1100@150℃ 4A RDS(ON) (at VGS=10V) < 4.2Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK5N100L Top View D TO-247 G S G S D AOK5N100 Orderable Part Number Package Type Form Minimum Order Quantity AOK5N100L TO-247 Green Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOK5N100 1000 Units V ±30 V 4 2.5 A IDM 15 Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 117 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D A Maximum Case-to-sink Maximum Junction-to-Case EAS dv/dt 235 5 195 1.6 -55 to 150 mJ V/ns W W/°C °C 300 °C AOK5N100 40 0.5 0.64 Units °C/W °C/W °C/W Rev.1.0: December 2013 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com Page 1 of 5 AOK5N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 1100 V ID=250µA, VGS=0V 1.04 V/ oC VDS=1000V, VGS=0V 1 VDS=800V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A gFS Forward Transconductance VDS=40V, ID=2.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V 3.5 4.2 Ω 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current 15 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 3.3 5 S 0.73 750 950 1150 pF 40 62 85 pF 3.5 6 9 pF 2 4.3 6.5 Ω 19 23 nC 15 VGS=10V, VDS=800V, ID=5A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/µs,VDS=100V 350 450 550 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 4.2 5.5 6.8 Body Diode Reverse Recovery Time VGS=10V, VDS=500V, ID=5A, RG=25Ω 4.6 nC 6.5 nC 27 ns 40 ns 50 ns 33 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using