AON6884

AON6884 40V Dual N-Channel MOSFET General Description Product Summary The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. ID (at VGS=10V) 40V 34A RDS(ON) (at VGS=10V) < 11.3mΩ RDS(ON) (at VGS = 4.5V) < 13.8mΩ VDS 100% UIS Tested 100% Rg Tested D1 D2 Top View S1 1 8 G1 S2 2 7 3 6 D1 D1 D2 G2 4 5 D2 G1 G2 S1 DFN5X6 EP2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C ±20 V A 120 9 IDSM TA=70°C Units V 21 IDM TA=25°C Continuous Drain Current Maximum 40 34 ID TC=100°C S2 A 7 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: November 2010 1.6 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1 TJ, TSTG Symbol t ≤ 10s W 8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 21 PD -55 to 150 Typ 35 65 5 °C Max 45 80 6 Units °C/W °C/W °C/W Page 1 of 6 AON6884 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 40 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.55 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C VDS=0V, VGS= ±20V ±100 nA 2.1 2.7 V 9.4 11.3 14 17 13.8 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=10A 11 gFS Forward Transconductance VDS=5V, ID=10A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 1200 VGS=0V, VDS=20V, f=1MHz µA 5 VGS=10V, ID=10A Units V VDS=40V, VGS=0V IDSS Crss Max 1500 mΩ mΩ S 1 V 25 A 1950 pF 150 215 280 pF 80 135 190 pF 1.7 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 27.2 33 nC Qg(4.5V) Total Gate Charge 10 13.6 16 nC 3.6 4.5 5.4 nC 6.4 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=10A 3.8 VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω IF=10A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 6.4 ns 17.2 ns 29.6 ns 16.8 ns 9 13 17 25 35 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using