AON7405_001

AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS= -10V) -30V -50A RDS(ON) (at VGS= -10V) < 6.2mΩ RDS(ON) (at VGS = -6V) < 8.9mΩ VDS • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested D Top View DFN 3.3x3.3 EP Top View Bottom Pin 1 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current V -39 A -25 IDSM TA=70°C ±25 -210 IDM TA=25°C Units V -50 ID TC=100°C C Maximum -30 A -20 Avalanche Current C IAR, IAS -44 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR, EAS 97 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2. 0: May 2013 6.25 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -210 µA ±100 nA -2.8 V 5.1 6.2 7.6 9.2 VGS=-6V, ID=-20A 7.1 8.9 VGS=-4.5V, ID=-10A 10.7 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Units -2.2 VGS=-10V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ Maximum Body-Diode Continuous Current A G DYNAMIC PARAMETERS Ciss Input Capacitance mΩ mΩ 46 -0.7 mΩ S -1 V -50 A 1960 2450 2940 pF 380 550 720 pF 220 370 520 pF 7 14 28 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33 42 51 nC Qg(4.5V) Total Gate Charge 16 21 26 nC 5.5 7 8.5 nC 12 17 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A 7 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 9.5 ns 10 ns 104 ns 78 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 20 25 30 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 37 47 57 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using