AOTF10N60L

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 10A RDS(ON) (at VGS=10V) < 0.75W 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G D AOT10N60 G S G AOTF10N60 D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10N60/AOB10N60 Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Units V V 10* 7.2 7.2* A IDM 36 IAR 4.4 A EAR 290 mJ EAS 580 45 5 mJ dv/dt PD V/ns 250 50 W 2 0.4 -55 to 150 W/ oC °C 300 °C TJ, TSTG TL Symbol RqJA RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.9.0: January 2021 AOTF10N60 ±30 10 ID S G AOB10N60 AOT10N60/AOB10N60 65 AOTF10N60 65 Units °C/W 0.5 0.5 -2.5 °C/W °C/W www.aosmd.com Page 1 of 6 AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) VDS=5V ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ID=250μA, VGS=0V, TJ=150°C 700 ID=250μA, VGS=0V V o V/ C 0.65 VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 mA 4 4.5 nA V VGS=10V, ID=5A 0.6 0.75 W VDS=40V, ID=5A 15 3 S 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current 36 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=10A 0.73 1100 1320 1600 pF 105 130 160 pF 7.5 9.3 11 pF 3 3.8 6 W 31 40 nC 6 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge 14.4 20 nC tD(on) Turn-On DelayTime 28 35 ns tr Turn-On Rise Time 66 80 ns tD(off) Turn-Off DelayTime 76 95 ns tf trr Turn-Off Fall Time 64 80 ns IF=10A,dI/dt=100A/ms,VDS=100V 290 350 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/ms,VDS=100V 3.9 4.7 ns mC Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=10A, RG=25W A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using