AOTF12N60FD

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 12A RDS(ON) (at VGS=10V) < 0.65Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT12N60FDL & AOB12N60FDL & AOTF12N60FDL Top View TO-220 D TO-263 D2PAK TO-220F D G G D S AOT12N60FD G D S G AOTF12N60FD AOB12N60FD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N60FD/AOB12N60FD Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 12 ID Units V V 12* 8 8* A IDM 48 IAR 5 A EAR 375 mJ EAS dv/dt 750 5 mJ V/ns W PD 278 50 2.2 0.4 TJ, TSTG TL Symbol RθJA RθCS -55 to 150 W/ oC °C 300 °C AOT12N60FD/AOB12N60FD 65 AOTF12N60FD 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.4.0:June 2013 AOTF12N60FD ±30 VGS TC=25°C S S www.aosmd.com Page 1 of 6 AOT12N60FD/AOB12N60FD/AOTF12N60FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=10mA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=10mA, VGS=0V, TJ=150°C 700 V ID=10mA, VGS=0V 0.68 V/ oC VDS=600V, VGS=0V 10 VDS=480V, TJ=125°C 100 ±100 2.4 µA 3 4 nΑ V 0.65 Ω 1.6 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.51 gFS Forward Transconductance VDS=40V, ID=6A 12 VSD Diode Forward Voltage IS=12A,VGS=0V 1.3 IS Maximum Body-Diode Continuous Current 12 A ISM Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 1310 1659 2010 pF 110 166 220 pF 9 15.8 23 pF 1.8 3.7 5.6 Ω 41 50 nC 32 VGS=10V, VDS=480V, ID=12A S 8.7 nC Gate Drain Charge 19 nC tD(on) Turn-On DelayTime 34 ns tr Turn-On Rise Time 90 ns tD(off) Turn-Off DelayTime 120 ns tf trr Turn-Off Fall Time 82 ns IF=12A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 135 220 0.5 0.8 Qgs Gate Source Charge Qgd Qrr VGS=10V, VDS=300V, ID=12A, RG=25Ω ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using