AOTF3N80

AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 900V@150℃ 2.8A RDS(ON) (at VGS=10V) < 4.8Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF3N80L Top View D TO-220F G AOTF3N80 G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF3N80 800 Units V ±30 V 2.8* 1.8* A Pulsed Drain Current C IDM 9 Avalanche Current C IAR 2.2 A Repetitive avalanche energy C EAR 72 mJ 145 5 35 mJ V/ns W 0.3 -55 to 150 W/ oC °C 300 °C AOTF3N80 65 3.6 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.1.0 May 2013 www.aosmd.com Page 1 of 5 AOTF3N80 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 800 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 900 V ID=250µA, VGS=0V 0.78 V/ oC VDS=800V, VGS=0V 1 VDS=640V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 4.2 4.5 nΑ V VGS=10V, ID=1.5A 3.8 4.8 Ω VDS=40V, ID=1.5A 2.5 IS=1A,VGS=0V 0.77 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge 3.3 S 2.8 A 9 A 510 VGS=0V, VDS=25V, f=1MHz pF 39 pF 3.7 pF VGS=0V, VDS=0V, f=1MHz 2.9 Ω 10 nC VGS=10V, VDS=640V, ID=3A 2.6 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs ±100 µA Qgd Gate Drain Charge 2.9 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 25 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=400V, ID=3A, RG=25Ω 34 ns 19 ns IF=3A,dI/dt=100A/µs,VDS=100V 344 Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V 2.2 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using