AOTF4N60

AOT4N60/AOTF4N60 600V, 4A N-Channel MOSFET General Description The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 4A RDS(ON) < 2.2Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-220 Top View TO-220F D G D G S D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT4N60 Symbol AOTF4N60 VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C, G C, G Units V V A A mJ mJ V/ns W W/ oC °C °C TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 4 2.5 16 2.5 94 188 5 104 0.83 -50 to 150 300 AOT4N60 65 0.5 1.2 4* 2.5* Repetitive avalanche energy Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25 oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D A 35 0.28 AOTF4N60 65 -3.6 Units °C/W °C/W °C/W Maximum Case-to-Sink RθJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT4N60 / AOTF4N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C ID=250μA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=VGS, ID=250μA VGS=10V, ID=2A VDS=40V, ID=2A 3 4 1.9 7.4 0.77 1 4 16 400 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 40 3.5 3.3 511 51 4.4 4.2 15.0 VGS=10V, VDS=480V, ID=4A 3.0 7.6 20.2 VGS=10V, VDS=300V, ID=4A, RG=25Ω IF=4A,dI/dt=100A/μs,VDS=100V 28.7 36 27 212 1.6 254 1.9 615 65 5.3 6.3 18.0 3.6 9.1 Min 600 700 0.69 1 10 ±100 5 2.2 Typ Max Units V V o V/ C μA nA V Ω S V A A pF pF pF Ω nC nC nC ns ns ns ns ns μC Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/μs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using