AOTS32334C

AOTS32334C 30V N-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant ID (at VGS=4.5V) 30V 8A RDS(ON) (at VGS=10V) < 20mΩ RDS(ON) (at VGS=4.5V) < 26mΩ VDS ESD protection Applications • Ideal for Load Switch TSOP6 Top View Bottom View D Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AOTS32334C TSOP-6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: January 2019 Steady-State Steady-State RqJA RqJL www.aosmd.com A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V 40 PD TA=70°C ±20 6.8 IDM TA=25°C B Units V 8 ID TA=70°C C Maximum 30 -55 to 150 Typ 42 68 23 °C Max 50 85 30 Units °C/W °C/W °C/W Page 1 of 5 AOTS32334C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA V 1 TJ=55°C 1.3 ±10 μA 1.8 2.3 V 16 20 24 30 26 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7.5A 20 gFS Forward Transconductance VDS=5V, ID=8A 33 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 5 VGS=10V, ID=8A Coss Units 30 VDS=30V, VGS=0V IDSS Max VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 1 V 3 A 600 pF 70 pF 60 pF 2.4 3.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 20 nC Qg(4.5V) Total Gate Charge 6 12 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=15V, ID=8A 1.2 2.2 nC Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 4 ns 20 ns 4 ns IF=8A, di/dt=500A/ms 5 Body Diode Reverse Recovery Charge IF=8A, di/dt=500A/ms 6 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.875W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) TJ(Max)=150°C TA=25°C 10ms Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 100 10 100 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=85°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2019 www.aosmd.com Page 4 of 5 AOTS32334C Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5