AOU3N50

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View VDS 600V@150℃ ID (at VGS=10V) 2.8A RDS(ON) (at VGS=10V) < 3Ω 100% UIS Tested! 100% Rg Tested! TO251 D Bottom View Top View Bottom View D D G G S S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C S G D Maximum 500 Units V ±30 V 2.8 ID 1.8 A 9 IDM Avalanche Current C IAR 2 A Repetitive avalanche energy C EAR 60 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 120 50 5 57 mJ V/ns 0.45 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.8.0: March 2016 dv/dt PD TJ, TSTG TL Symbol RθJA RθCS W Typical 45 Maximum 55 Units °C/W 1.8 0.5 2.2 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V VDS=500V, VGS=0V 0.54 V V/ oC 1 VDS=400V, TJ=125°C 10 ±100 3.5 µA 4.1 4.5 nΑ V 3 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.5A 2.3 gFS Forward Transconductance VDS=40V, ID=1.5A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 S IS Maximum Body-Diode Continuous Current 3 A ISM Maximum Body-Diode Pulsed Current 9 A pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=3A 221 276 331 25 31.4 38 pF 2.1 2.6 4.1 pF 1.9 3.9 5.9 Ω 6.7 8.0 nC Qgs Gate Source Charge 1.7 3.0 nC Qgd Gate Drain Charge 2.7 3.2 nC tD(on) Turn-On DelayTime 11 13.2 ns tr Turn-On Rise Time 19 23.0 ns tD(off) Turn-Off DelayTime 20.5 24.6 ns tf trr Turn-Off Fall Time 15 18.0 ns Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V 134 161 Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V 0.89 1.1 ns µC VGS=10V, VDS=250V, ID=3A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using